MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC RECORDING ELEMENT, AND HIGH-FREQUENCY DEVICE

MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY

Magnetoresistance effect element, magnetic recording element, and high-frequency device

Magnetoresistance effect element and Heusler alloy

Magnetoresistance effect element

Two-dimensional Dirac half-metal ferromagnets and ferromagnetic materials for spintronic devices

Magnetoresistance effect element and Heusler alloy

Ferrimagnetic Heusler compounds with high spin polarization

Insertion layers for perpendicularly magnetized Heusler layers with reduced magnetic damping

Magnetoresistance effect element

Rare earth metal-free hard magnets

Magnetoresistance effect element and Heusler alloy

Magnetoresistance effect element and Heusler alloy

DOUBLE-CHANNEL TOPOLOGICAL INSULATOR STRUCTURE, AND METHOD FOR GENERATING QUANTIZED ANOMALOUS HALL EFFECT

Magnetoresistive effect element with nonmagnetic spacer layer including an aluminum alloy

Magnetoresistance effect element

Magnetoresistance effect element

Low stray field magnetic memory

Magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillation element

Magnetoresistance effect element

Two-dimensional Dirac half-metal ferromagnets and ferromagnetic materials for spintronic devices

Magnetoresistance effect element

Laminated structure and spin modulation element

Memory element

Magnetoresistance effect element

Monocrystalline magneto resistance element, method for producing the same and method for using same

Templating layers for perpendicularly magnetized heusler films

Spin logic device with high spin injection efficiency from a matched spin transfer layer

Magnetoresistance effect element

Magnetoresistance effect element

Monocrystalline magneto resistance element, method for producing the same and method for using same

Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same

Magnetic memory element and memory device

Memory device

Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same

Magnetic memory cells and methods of formation

Nano multilayer film, field effect tube, sensor, random accessory memory and preparation method

MR enhancing layer (MREL) for spintronic devices

MR enhancing layer (MREL) for spintronic devices

SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH TOPOGRAPHICALLY SMOOTH ELECTRODE AND METHOD TO FORM SAME

CoFe-based heusler alloy and spintronics devices using the same

Spin valves using organic spacers and spin-organic light-emitting structures using ferromagnetic electrodes

Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with multilayer reference layer including a Heusler alloy

Method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor containing a ferromagnetic alloy requiring post-deposition annealing

METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH AN ANTIPARALLEL FREE (APF) STRUCTURE FORMED OF AN ALLOY REQUIRING POST-DEPOSITION HIGH TEMPERATURE ANNEALING

Three-terminal spin-torque oscillator (STO)

Tunneling magnetoresistive effect element and spin MOS field-effect

Ferromagnetic tunnel junction structure and magnetoresistive element using the same

Ferromagnetic tunnel junction structure, and magneto-resistive element and spintronics device each using same

Magnetoresistive element and magnetic memory

SPIN TRANSISTOR AND INTEGRATED CIRCUIT

MR enhancing layer (MREL) for spintronic devices

Magnetoresistive element utilizing a peltier effect junction of Au and CuNi to cool the element

Magnetoresistive sensor employing nitrogenated Cu/Ag under-layers with (100) textured growth as templates for CoFe, CoFeX, and Co(MnFe)X alloys

Spin transistor and method of operating the same

Spin transistor and method of manufacturing the same

Magnetoresistive magnetic head having a cpp element using a heusler alloy layer and a high saturation magnetization layer

Spin field effect logic devices

Method of forming ferromagnetic material, transistor and method of manufacturing the same

Current perpendicular to plane (CPP) magnetic read head

ST-RAM EMPLOYING HEUSLER ALLOYS

Stack having Heusler alloy, magnetoresistive element and spin transistor using the stack, and method of manufacturing the same

Current perpendicular to plane magnetoresistive sensor employing half metal alloys for improved sensor performance

MAGNETORESISTIVE ELEMENT AND LAYERED OBJECT

Tunnel barrier sensor with multilayer structure

Method of using spin injection device

Tunneling magnetoresistive effect element and spin MOS field-effect transistor

Method and apparatus for generating giant spin-dependent chemical potential difference in non-magnetic materials

Close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same

Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory

Magnetic device and frequency detector

Spin field effect transistor using half metal and method of manufacturing the same

Magnetic thin film, and magnetoresistance effect device and magnetic device using the same

Coherent spin valve and related devices

Magneto-resistance effect element having free layer including magnetostriction reduction layer and thin-film magnetic head

Vertical spin transistor and method of manufacturing the same

Spin transistor

DUAL CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH HEUSLER ALLOY FREE LAYER AND MINIMAL CURRENT-INDUCED NOISE

Magnetoresistive effect element with resistance adjustment layer of semimetal, magnetic head and magnetic reproducing apparatus

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY

Spintronics Material and Tmr Device

Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory

Spin MOSFET

Fabrication process for magneto-resistive effect devices of the CPP structure

CCP magnetoresistive effect device with Fe barrier layers inhibiting diffusion of Co atoms to Heusler alloy layers in fixed layer and free layer, and head, head-gimbal assembly and hard disk system including said device

Method for manufacturing magnetic field detecting element utilizing diffusion and migration of silver

Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications

MAGNETORESISTANCE EFFECT DEVICE, MAGNETIC HEAD, MAGNETIC RECORDING SYSTEM, AND MAGNETIC RANDOM ACCESS MEMORY

Magnetic thin film and magnetoresistance effect element having a heusler alloy layer containing an additive element

Magnetoresistance element employing Heusler alloy as magnetic layer

Magneto-resistance effect element and thin-film magnetic head

Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus

Magneto-resistance effect element having Heusler alloy compounds adjacent to spacer layer

MAGNETIC DETECTING ELEMENT HAVING PINNED MAGNETIC LAYER WITH PINNED MAGNETIZATION DIRECTION AND FREE MAGNETIC LAYER FORMED ON PINNED MAGNETIC LAYER WITH NONMAGNETIC MATERIAL LAYER INTERPOSED BETWEEN WITH MAGNETIZATION DIRECTION CHANGING BY EXTERNAL MAGNET

Magnetic head with improved CPP sensor using Heusler alloys

Spin valves using organic spacers and spin-organic light-emitting structures using ferromagnetic electrodes

Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory

Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements

Magneto-resistance element and thin film magnetic head with improved heat reliability

MAGNETIC SENSING ELEMENT INCLUDING FREE LAYER CONTAINING HALF-METAL

Spin valve-GMR element in which a non-metal laminate layer is provided as a free magnetic layer and method of manufacturing the same

Ferromagnetic tunnel magnetoresistive devices and magnetic head

Magnetic detecting element with diffusion-preventing layer between spacer Cu and magnetic layer, and method of manufacturing the same

Magnetic detective head comprising free layer

CPP magnetic detecting device containing NiFe alloy on free layer thereof

Magnetic detectible head comprising free layer

Magnetic detecting element having free layer formed of NiFe alloy and method of manufacturing the same

Magnetic sensing element including free layer having gradient composition and method for manufacturing the same

Coherent spin valve and related devices

Ferromagnetic tunnel magnetoresistive devices and magnetic head

Magnetoresistance effect device and magnetism sensor using the same

Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus

Magnetoresistive element with oxide magnetic layers and metal magnetic films deposited thereon

Magnetic recording element and device

CCP magnetic detecting element including a self-pinned CoFe layer

Spin injection device, magnetic device using the same, magnetic thin film used in the same

Switching devices based on half-metals

Solid material comprising a structure of almost-completely-polarised electronic orbitals, method of obtaining same and use thereof in electronics and nanoelectronics

Method for fabricating a magnetoresistive film and magnetoresistive film

Magnetic sensing element including magnetic layer composed of Heusler alloy disposed on underlayer having {111}-oriented fcc structure

Ferromagnetic tunnel magnetoresistive devices and magnetic head