Magnetic elements of amorphous based dual free layer structures and recording devices using such elements

Amorphous spin diffusion layer for modified double magnetic tunnel junction structure

Magnetic elements of amorphous based dual free layer structures and recording devices using such elements

Storage device, manufacturing method therefor, and storage apparatus

Magnetic memory device

Composite free layer for magnetoresistive random access memory

Magnetic memory device

Laminated magnetic materials for on-chip magnetic inductors/transformers

Laminated magnetic materials for on-chip magnetic inductors/transformers

Magnetic memory devices having a perpendicular magnetic tunnel junction

Magnetoresistive sensor with SAF structure having amorphous alloy layer

Magnetic memory devices having a perpendicular magnetic tunnel junction

Spin transfer MRAM element having a voltage bias control

Magnetoresistance effect device and method of production of the same

Magnetic tunnel junction having coherent tunneling structure

Magnetic tunnel junction having coherent tunneling structure

Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device

MAGNETORESISTANCE EFFECT DEVICE AND METHOD OF PRODUCTION OF THE SAME

Magnetic tunnel junction having coherent tunneling structure

Method of forming a high performance tunneling magnetoresistive (TMR) element

TMR device with surfactant layer on top of CoFeB/CoFeinner pinned layer

FERROMAGNETIC TUNNEL JUNCTION ELEMENT, MAGNETIC RECORDING DEVICE AND MAGNETIC MEMORY DEVICE

METHODS AND APPARATUS FOR A SYNTHETIC ANTI-FERROMAGNET STRUCTURE WITH IMPROVED THERMAL STABILITY

Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same

METHOD OF PRODUCTION OF A MAGNETORESISTANCE EFFECT DEVICE

Method of production of a magnetoresistance effect device

Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device

Magnetoresistance element magnetic random access memory, magnetic head and magnetic storage device

MAGNETORESISTANCE EFFECT DEVICE

Magnetoresistive effect element and magnetic memory device

MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY

Magnetic reading head with first and second element units each including a ferromagnetic layer and each with a different spin-polarization

Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence

High frequency magnetic thin film, composite magnetic thin film and magnetic device using them

Process of manufacturing a TMR device

Magnetic field detecting element having a tunnel barrier formed on an amorphous layer

Magnetoresistive effect element, magentic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device

MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements

Magnetoresistance effect device and method of production of the same

Magnetic tunnel junctions with improved tunneling magneto-resistance

Magnetoresistive element and magnetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using the same

Method of making amorphous alloys for semiconductor device

High-frequency magnetic thin film, composite magnetic thin film, and magnetic device using same

Magnetic tunnel junction with improved tunneling magneto-resistance

Magnetic memory with write inhibit selection and the writing method for same

Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same

Magnetic tunnel junction and memory device including the same

Fe-Co-B alloy target and its production method, and soft magnetic film produced by using such target, and magnetic recording medium and TMR device

Strontium oxide as a tunnel barrier for spin injection and giant spin accumulation