Patents-Review.com
ClassID:

201569 ⎘

H01F10/32 - CPC Classification

Classification description:

Thin magnetic films, e.g. of one-domain structure Spin-exchange-coupled multilayers, e.g. nanostructured superlattices

Sub-classes:
Recent Application in this class:
#1
20260024904
2026-01-22

SHORT-WAVELENGTH SPIN WAVE TRANSDUCER

 #2
20250338775
2025-10-30

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

 #3
20250291006
2025-09-18

APPARATUS AND METHOD FOR GENERATING MAGNETIC VORTEX SPIN STRUCTURES

 #4
20240365684
2024-10-31

SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETIZATION ROTATIONAL TYPE MAGNETORESISTIVE ELEMENT, MAGNETIC MEMORY, AND MAGNETIZATION ROTATION METHOD

 #5
20240145147
2024-05-02

THIN FILM INDUCTOR ELEMENT AND THIN FILM VARIABLE INDUCTOR ELEMENT

 #6
20240130247
2024-04-18

MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT

 #7
20230299451
2023-09-21

SHORT-WAVELENGTH SPIN WAVE TRANSDUCER

 #8
20230210017
2023-06-29

Magnetoresistive effect element

 #9
20230077612
2023-03-16

MAGNETIC FILM, MAGNETORESISTIVE EFFECT ELEMENT, AND METHOD FOR MANUFACTURING MAGNETIC FILM

 #10
20230026375
2023-01-26

APPARATUS AND METHOD FOR GENERATING MAGNETIC VORTEX SPIN STRUCTURES

 #11
20220392683
2022-12-08

Logic gates based on phase shifters

 #12
20220231221
2022-07-21

Spin current magnetization rotational element

 #13
20220223786
2022-07-14

SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY

 #14
20220216394
2022-07-07

Magnetic domain wall moving element and magnetic array

 #15
20210184106
2021-06-17

Magnetoresistive effect element, magnetic memory, magnetization rotation method, and spin current magnetization rotational element

 #16
20210043829
2021-02-11

Magnon spin valve, magnon sensor, magnon field effect transistor, magnon tunnel junction and magnon memory

 #17
20200388750
2020-12-10

MAGNETIC DEVICES INCLUDING IRON-RHODIUM FILMS PROVIDING BI-STABLE MAGNETIC ORDER AT ROOM TEMPERATURE, MAGNETIC MEMORY SYSTEMS INCLUDING THE SAME AND RELATED METHODS OF OPERATION

 #18
20200279995
2020-09-03

Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anistropy

 #19
20200152862
2020-05-14

Magnetoresistance effect element

 #20
20200144487
2020-05-07

Fully compensated synthetic ferromagnet for spintronics applications

 #21
20200083439
2020-03-12

Magnetoresistive effect element, magnetic memory, magnetization rotation method, and spin current magnetization rotational element

 #22
20200035911
2020-01-30

Spin current magnetization rotational element, magnetoresistance effect element and magnetic memory

 #23
20200028073
2020-01-23

Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy

 #24
20190279698
2019-09-12

Storage device, manufacturing method therefor, and storage apparatus

 #25
20190189911
2019-06-20

Fully compensated synthetic ferromagnet for spintronics applications

 #26
20190172513
2019-06-06

MAGNETORESISTIVE ELEMENT AND ELECTRONIC DEVICE

 #27
20190148627
2019-05-16

Magnetoresistance effect element

 #28
20190140168
2019-05-09

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

 #29
20190096957
2019-03-28

Magnetoresistive element and electronic device having high heat resistance

 #30
20190088866
2019-03-21

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

 #31
20190074433
2019-03-07

Magnetoresistance effect element and magnetic memory

 #32
20180351083
2018-12-06

Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory

 #33
20180351082
2018-12-06

Spin current magnetization rotational element, magnetoresistance effect element and magnetic memory

 #34
20180323371
2018-11-08

Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy

 #35
20180301621
2018-10-18

Spintronics element

 #36
20180269387
2018-09-20

MgO insertion into free layer for magnetic memory applications

 #37
20180190335
2018-07-05

Storage device, manufacturing method therefor, and storage apparatus

 #38
20180175286
2018-06-21

Magnetoresistance effect element and magnetic memory

 #39
20180130943
2018-05-10

MAGNETIC TUNNEL JUNCTION ELEMENT WITH REDUCED TEMPERATURE SENSITIVITY

 #40
20180040815
2018-02-08

Magnetoresistance effect element

 #41
20180031645
2018-02-01

Sensor device with a soft magnetic alloy having reduced coercivity, and method for making same

 #42
20180026179
2018-01-25

Fully compensated synthetic ferromagnet for spintronics applications

 #43
20170346149
2017-11-30

Tunable magnonic crystal device and filtering method

 #44
20170256703
2017-09-07

Multilayer structure for reducing film roughness in magnetic devices

 #45
20170207016
2017-07-20

Layered Heusler alloys and methods for the fabrication and use thereof

 #46
20170179374
2017-06-22

Magnetoresistive element and magnetic memory

 #47
20170155039
2017-06-01

Electronic device

 #48
20170148977
2017-05-25

Multilayer structure for reducing film roughness in magnetic devices

 #49
20160359104
2016-12-08

ALLOY CRYSTALLISATION METHOD

 #50
20160276583
2016-09-22

Method of manufacturing tunnel magnetoresistive effect element and sputtering apparatus

 #51
20160191281
2016-06-30

Spintronic wireless communication system for simultaneously modulating multi-band frequency and amplitude

 #52
20160012951
2016-01-14

MULTIFERROIC NANOSCALE THIN FILM MATERIALS, METHOD OF ITS FACILE SYNTHESES AND MAGNETOELECTRIC COUPLING AT ROOM TEMPERATURE

 #53
20150280108
2015-10-01

Semiconductor device having pinned layer with enhanced thermal endurance

 #54
20150048464
2015-02-19

Semiconductor device having pinned layer with enhanced thermal endurance

 #55
20150008550
2015-01-08

Magnetic memory element

 #56
20140306302
2014-10-16

Fully compensated synthetic antiferromagnet for spintronics applications

 #57
20140284592
2014-09-25

Magnetoresistive effect element and manufacturing method thereof

 #58
20140254253
2014-09-11

Magnetic memory element and magnetic memory device

 #59
20140168812
2014-06-19

Spin torque oscillator (STO) reader with soft magnetic side shields

 #60
20140154528
2014-06-05

Low resistance area magnetic stack

 #61
20140042573
2014-02-13

Memory element and memory device

 #62
20130169371
2013-07-04

Spin transfer oscillator

 #63
20130141091
2013-06-06

Magnetic field sensor

 #64
20120126920
2012-05-24

Laminate composite and method for making same

 #65
20120070693
2012-03-22

Magnetic sensor stack body, method of forming the same, film formation control program, and recording medium

 #66
20120063222
2012-03-15

Memory element and memory device

 #67
20120063221
2012-03-15

Memory element and memory device

 #68
20110271148
2011-11-03

Preloading unwind data for non-intrusive backtracing

 #69
20090179206
2009-07-16

Method and apparatus for generating giant spin-dependent chemical potential difference in non-magnetic materials

 #70
20060202292
2006-09-14

Magnetoresistive medium including a vicinally treated substrate

 #71
20050264958
2005-12-01

Magnetoresistive medium including nanowires

 #72
20050145909
2005-07-07

Magnetoresistive device and electronic device

 #73
20050120546
2005-06-09

Magnetic head having high conductivity lead structures seeded by epitaxially matched seed layer and fabrication method therefor

 #74
20050068688
2005-03-31

Magnetoresistance effect element comprising a nano-contact portion not more than a fermi length, method of manufacturing same and magnetic head utilizing same

 #75
20050031909
2005-02-10

Magnetic thin film media with a pre-seed layer of CrTi

 #76
15477288
2018-07-03

Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy

 #77
15461779
2018-05-08

MgO insertion into free layer for magnetic memory applications

 #78
14082260
2014-10-07

Dynamic control of spin states in interacting magnetic elements