201572 ⎘
Thin magnetic films, e.g. of one-domain structure; Spin-exchange-coupled multilayers, e.g. nanostructured superlattices Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices
MAGNETORESISTANCE EFFECT ELEMENT
#2Magnetoresistance effect element
#3Oxide interface displaying electronically controllable ferromagnetism
#4Oxide interface displaying electronically controllable ferromagnetism
#5Apparatus and method for boosting signal in magnetoelectric spin orbit logic
#6Electronic device
#7Integrated circuits with magnetic tunnel junctions and methods for producing the same
#8Spin valves using organic spacers and spin-organic light-emitting structures using ferromagnetic electrodes
#9Method for ultra-fast controlling of a magnetic cell and related devices
#10Tunneling magnetoresistive element, semiconductor junction element, magnetic memory and semiconductor light emitting element
#11Fully integrated tuneable spin torque device for generating an oscillating signal and method for tuning such apparatus
#12Methods of making spintronic devices with constrained spintronic dopant
#13Method for ultra-fast controlling of a magnetic cell and related devices
#14Spin valves using organic spacers and spin-organic light-emitting structures using ferromagnetic electrodes
#15Device having a structural element with magnetic properties, and method
#16Tunneling magnetoresistance device semiconductor junction device magnetic memory and semiconductor light-emitting device
#17Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based device