201573 ⎘
Thin magnetic films, e.g. of one-domain structure; Spin-exchange-coupled multilayers, e.g. nanostructured superlattices Exchange coupling of magnetic films via an antiferromagnetic interface
Permanent magnet comprising an antiferromagnetic layer and a ferromagnetic layer
#2Magnetic structures, semiconductor structures, and semiconductor devices
#3Electrical-current control of structural and physical properties via strong spin-orbit interactions in canted antiferromagnetic Mott insulators
#4Spin current magnetization rotational element, spin-orbit torque magnetoresistance effect element, and magnetic memory
#5Magnetic structures, semiconductor structures, and semiconductor devices
#6Integrated magnetic device with variable inductance and method for making such a device
#7Magnetoelectric computational devices
#8Magnetoelectric computational devices
#9Variable-frequency magnetoresistive effect element and oscillator, detector, and filter using the same
#10Tunnel magnetoresistive sensor having stabilized magnetic shield and dielectric gap sensor
#11Magnetoelectric computational devices
#12Permanent magnet comprising a stack of N patterns
#13Magnetic memory device having cobalt-iron-beryllium magnetic layers
#14Magnetic structures, semiconductor structures, and semiconductor devices
#15LAMINATED STRUCTURES FOR POWER EFFICIENT ON-CHIP MAGNETIC INDUCTORS
#16Antiferromagnet and heavy metal multilayer magnetic systems for switching magnetization using spin-orbit torque
#17Spin valve magnetoresistance element with improved response to magnetic fields
#18Semiconductor devices comprising magnetic memory cells
#19Recording read heads with a multi-layer AFM layer methods and apparatuses
#20Memory cells and methods of fabrication
#21Magnetization controlling element using magnetoelectric effect
#22Magnetic authenticity feature
#23Nano multilayer film, field effect tube, sensor, random accessory memory and preparation method
#24Domain wall motion in perpendicularly magnetized wires having artificial antiferromagnetically coupled multilayers with engineered interfaces
#25Memory cells, semiconductor device structures, memory systems, and methods of fabrication
#26Artificial magnetic conductor, and antenna
#27Spin current generator for STT-MRAM or other spintronics applications
#28Thermally assisted magnetic writing device
#29Magnetic memory cell construction
#30Spin current generator for STT-MRAM or other spintronics applications
#31Magnetic device with weakly exchange coupled antiferromagnetic layer
#32Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy
#33Magnetic memory cell construction
#34Three-layer magnetic element, magnetic field sensor, magnetic memory and magnetic logic gate using such an element
#35Spin current generator for STT-MRAM or other spintronics applications
#36Magnetic memory cell construction
#37Radio-frequency device comprising a thin film with high permittivity and permeability
#38Nanodevices for spintronics and methods of using same
#39Spin current generator for STT-MRAM or other spintronics applications
#40Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
#41Magnetic memory cell construction
#42Ultrathin ferromagnetic/antiferromagnetic coupling film structure and fabrication method thereof
#43Inductor
#44Magnetoresistive reproducing magnetic head and magnetic recording apparatus utilizing the head
#45Magnetic field read sensor based on the extraordinary hall effect
#46Magnetic memory device and method of fabricating the same
#47Information storage medium with laterally magnetised dot array, and process for producing said medium
#48Magnetic spin valve with a magnetoelectric element
#49Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy
#50Exchange coupling film and magnetoresistive element using the same
#51Spin scattering and heat assisted switching of a magnetic element
#52Exchange coupling film and magnetoresistive element using the same
#53Magnetic field enhanced photovoltaic device
#54Exchange coupling film and magnetoresistive element using the same
#55Exchange coupling film and magnetoresistive element using the same
#56Exchange coupling film and magnetoresistive element using the same
#57Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy
#58Exchange coupled film having improved current-carrying reliability and improved rate of change in resistance and magnetic sensing element using same
#59Tunnel magnetoresistive sensor having stabilized magnetic shield and dielectric gap sensor