201577 ⎘
Thin magnetic films, e.g. of one-domain structure; Spin-exchange-coupled multilayers, e.g. nanostructured superlattices; Exchange coupling via one or more magnetisable ultrathin or granular films via a non-magnetic spacer made of a noble metal, e.g.(Co/Pt) n multilayers having perpendicular anisotropy
Large Dzyaloshinskii – Moriya Interaction and Perpendicular Magnetic Anisotropy Induced by Chemisorbed Species on Ferromagnets
#2Large Dzyaloshinskii-Moriya Interaction and Perpendicular Magnetic Anisotrophy Induced by Chemisorbed Species on Ferromagnets
#3Magnetic detection circuit, MRAM and operation method thereof
#4Method of and apparatus for measuring magnitude of magnetization of perpendicular thin film
#5Magnetic detection circuit, MRAM and operation method thereof
#6Magnetoresistance effect element and magnetic memory
#7Magnetic and spin logic devices based on Jahn-Teller materials
#8Alloy thin films exhibiting perpendicular magnetic anisotropy
#9Multilayer thin films exhibiting perpendicular magnetic anisotropy
#10Non-collinear magnetoresistive device
#11Laminating magnetic cores for on-chip magnetic devices
#12Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same
#13Magnetoresistance effect element
#14Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same
#15Magnetic memory device and method of magnetic domain wall motion
#16Magnetic memory devices including magnetic layers separated by tunnel barriers
#17TOP-PINNED MAGNETIC TUNNEL JUNCTION DEVICE WITH PERPENDICULAR MAGNETIZATION
#18Magnetic device having a magnetic material in a contact structure coupled to a magnetic element and method of manufacture thereof
#19Non-volatile magnetic memory element with graded layer
#20Non-volatile magnetic memory element with graded layer
#21Non-volatile magnetic memory element with graded layer
#22Non-volatile magnetic memory element with graded layer
#23Non-volatile magnetic memory element with graded layer
#24Non-volatile magnetic memory element with graded layer
#25Magnetic memory element and nonvolatile memory device
#26Magnetoresistance Device
#27Magnetic sensors having perpendicular anisotropy free layer
#28Magnetic detector and method for manufacturing the same
#29PERPENDICULAR MRAM WITH MTJ INCLUDING LAMINATED MAGNETIC LAYERS
#30Magnetic memory device and method of magnetic domain wall motion
#31Non-volatile magnetic memory element with graded layer
#32MTJ FILM AND METHOD FOR MANUFACTURING THE SAME
#33Magnetoresistive element and magnetic memory
#34Spin-transfer torque magnetic random access memory with multi-layered storage layer
#35Non-volatile magnetic memory element with graded layer
#36Non-volatile magnetic memory element with graded layer
#37Magnetic tunnel junction device
#38Magnetic memory devices
#39Three-layer magnetic element, magnetic field sensor, magnetic memory and magnetic logic gate using such an element
#40SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION
#41Magnetic memory devices including magnetic layers separated by tunnel barriers
#42SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION
#43MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDING APPARATUS
#44FCC-like trilayer AP2 structure for CPP GMR EM improvement
#45Magnetoresistive device
#46System and method for reducing critical current or magnetic random access memory
#47Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plan equilibrium magnetization
#48Non-volatile magnetic memory element with graded layer
#49Magnetic multilayer device, method for producing such a device, magnetic field sensor, magnetic memory and logic gate using such a device
#50Magnetic film for magnetic head
#51Magnetic film for magnetic head
#52Magnetoresistive element and magnetic memory
#53CPP spin valve with long spin diffusion length AP1 layers
#54Current perpendicular to plane (CPP) magnetoresistive sensor with improved pinned layer
#55Thin-film magnetic device with strong spin polarization perpendicular to the plane of the layers, magnetic tunnel junction and spin valve using such a device
#56Functional blocks for assembly
#57System and method for reducing critical current of magnetic random access memory
#58Magnetic structures, methods of fabricating magnetic structures and micro device incorporating such magnetic structures
#59FCC-like trilayer AP2 structure for CPP GMR EM improvement
#60Magnetoresistance effect element and production method and application method therefor same
#61Magnetic film for a magnetic device, magnetic head for a hard disk drive, and solid-state device
#62Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
#63Magnetic film forming method, magnetic pattern forming method and magnetic recording medium manufacturing method
#64Magnetic film forming method, magnetic pattern forming method and magnetic recording medium manufacturing method
#65Magnetic film forming method, magnetic pattern forming method and magnetic recording medium manufacturing method
#66Magnetic film forming method, magnetic pattern forming method and magnetic recording medium manufacturing method
#67Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
#68Perpendicular magnetization magnetic element utilizing spin transfer
#69Magnetic film forming method, magnetic pattern forming method and magnetic recording medium manufacturing method
#70Magnetic film for magnetic head