201580 ⎘
Thin magnetic films, e.g. of one-domain structure; Spin-exchange-coupled multilayers, e.g. nanostructured superlattices; Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being noble metal
TMR SENSOR HAVING ANTIFERROMAGNETICALLY COUPLED VORTICES
#2MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY
#3MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
#4Magnetoresistive devices comprising a synthetic antiferromagnetic coupling layer of RuAl having a (110) texture
#5Magnetoresistance effect element and Heusler alloy
#6Magnetoresistance effect element and Heusler alloy
#7Material having both negative spin polarization and negative anisotropy
#8Memory device and manufacturing method thereof
#9Force sensor
#10DIFFERENTIAL MAGNETOELECTRIC SPIN ORBIT LOGIC
#11Magnonic magneto-resistance device including two-dimensional spacer and electronic equipment comprising the same
#12Stacked structure, magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillator
#13Top buffer layer for magnetic tunnel junction application
#14Magnetoresistive effect element and magnetic memory
#15Magnetic sensor bias point adjustment method
#16Magnetoresistance effect element and Heusler alloy
#17Magnetic memory device including a free layer and a pinned layer
#18Top buffer layer for magnetic tunnel junction application
#19Magnetoresistance effect element
#20Magnetoresistive effect element
#21Magnetic structure based on synthetic antiferromagnetic free layer and derivative SOT-MRAM
#22Stress sensor
#23Magnetic domain wall displacement type magnetic recording element and magnetic recording array
#24Spin current magnetoresistance effect element and magnetic memory
#25Magnetic sensor and method for manufacturing said magnetic sensor
#26Terahertz Radiation Emitters
#27Magnetoresistive effect element
#28Stacked structure, magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillator
#29Spin current magnetization rotational element, method of manufacturing the same, magnetoresistance effect element, and magnetic memory
#30Magnetoresistance effect device and high-frequency device
#31Magnetoresistance effect device and high frequency device
#32Magnetoresistive effect device
#33Non-collinear magnetoresistive device
#34Laminating magnetic cores for on-chip magnetic devices
#35CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording
#36Laminating magnetic cores for on-chip magnetic devices
#37Spin valve element and method of manufacturing same
#38Patterned magnetoresistive (MR) device with adjacent flux absorbing stripes
#39CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording
#40Magneto-resistive effect device, magnetic head gimbal assembly, magnetic recording/reproduction device, strain sensor, pressure sensor, blood pressure sensor, and structural health monitoring sensor
#41Method of manufacturing spin torque oscillator
#42Magnetic memory device and method of magnetic domain wall motion
#43Semiconductor device
#44Patterned MR device with controlled shape anisotropy
#45Patterned MR device with controlled shape anisotropy
#46Laminating magnetic cores for on-chip magnetic devices
#47Laminating magnetic cores for on-chip magnetic devices
#48CoFe-based heusler alloy and spintronics devices using the same
#49Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with multilayer reference layer including a Heusler alloy
#50Reproducing head with spin-torque oscillator, and magnetic recording and reproducing apparatus
#51METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH AN ANTIPARALLEL FREE (APF) STRUCTURE FORMED OF AN ALLOY REQUIRING POST-DEPOSITION HIGH TEMPERATURE ANNEALING
#52Magnetic sensors having perpendicular anisotropy free layer
#53CoFe/Ni Multilayer film with perpendicular anisotropy for microwave assisted magnetic recording
#54CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording
#55Magnetic element with enhanced coupling portion
#56Magnetic memory device and method of magnetic domain wall motion
#57Magneto-resistive effect device, magnetic head gimbal assembly, magnetic recording/reproduction device, strain sensor, pressure sensor, blood pressure sensor, and structural health monitoring sensor
#58Semiconductor device
#59Current perpendicular to plane (CPP) magnetoresistive sensor having dual composition hard bias layer
#60Spin torque oscillator, method of manufacturing the same, magnetic recording head, magnetic head assembly, and magnetic recording apparatus
#61Writable magnetic element
#62Thin film magnetic head including spin-valve film with free layer magnetically connected with shield
#63AMPLIFYING DRIVING UNIT USING GIANT MAGNETO RESISTANCE SENSOR AND DIAGNOSIS DEVICE USING THE SAME
#64Magnetic field sensor device, corresponding production method, and magnetic field measuring method
#65Writable magnetic element
#66Magnetoresistance element and storage device using the same
#67CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording
#68Self-pinned spin valve magnetoresistance effect film and magnetic sensor using the same, and rotation angle detection device
#69Spin valve device including graphene, method of manufacturing the same, and magnetic device including the spin valve device
#70Spin-valve recording element and storage device
#71Method of manufacturing magnetoresistive element, sputter deposition chamber, apparatus for manufacturing magnetoresistive element having sputter deposition chamber, program and storage medium
#72Spin valve element, method of driving the same, and storage device using the same
#73Perpendicular magnetic recording system with spin torque oscillator and control circuitry for fast switching of write pole magnetization
#74Spin valve element driving method and spin valve element
#75Spin valve element and method of driving same
#76Spin valve element and method of manufacturing same
#77Biosensor and sensing cell array using the same
#78Magnetic logic element with toroidal multiple magnetic films and a method of logic treatment using the same
#79MRAM with cross-tie magnetization configuration
#80Magnetoresistive effect element and magnetic random access memory
#81Spin-torque oscillator, magnetic head including the spin-torque oscillator, and magnetic recording and reproducing apparatus
#82Patterned MR device with controlled shape anisotropy
#83Exchange coupled film including hafnium and amorphous layers usable in a magnetoresistive element in a thin-film magnetic head
#84Vortex spin momentum transfer magnetoresistive device
#85MAGNETO-RESISTANCE EFFECT ELEMENT INCLUDING FERROMAGNETIC LAYER HAVING GRANULAR STRUCTURE
#86Magneto-resistive effect device of the CPP structure and magnetic disk system
#87DEVICE FOR PROVIDING AN A.C. SIGNAL
#88MR device with surfactant layer within the free layer
#89Magnetic film for magnetic head
#90Magnetic film for magnetic head
#91Biosensor and sensing cell array using the same
#92SPINTRONIC DEVICES WITH CONSTRAINED SPINTRONIC DOPANT
#93MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
#94MRAM layer having domain wall traps
#95Spin-torque devices
#96Methods of manipulating the relaxation rate in magnetic materials and devices for using the same
#97Magnetic transistor structure
#98High speed low power annular magnetic devices based on current induced spin-momentum transfer
#99Biosensor and sensing cell array using the same
#100MRAM layer having domain wall traps
#101High speed low power magnetic devices based on current induced spin-momentum transfer
#102Single sensor element that is naturally differentiated
#103MRAM layer having domain wall traps
#104High speed low power magnetic devices based on current induced spin-momentum transfer
#105Process for producing metal thin films by ALD
#106Magnetic film for magnetic head