Patents-Review.com
ClassID:

201582 ⎘

H01F10/3259 - CPC Classification

Classification description:

Thin magnetic films, e.g. of one-domain structure; Spin-exchange-coupled multilayers, e.g. nanostructured superlattices; Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer

Recent Application in this class:
#1
20260130117
2026-05-07

TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION

 #2
20250351738
2025-11-13

MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES AND METHODS OF FORMING THE SAME

 #3
20250342874
2025-11-06

CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)

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20250248049
2025-07-31

MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMORY DEVICE

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20250204269
2025-06-19

NEUROMORPHIC DEVICES OF HEUSLER ALLOY BASED SPIN-TRANSFER-TORQUE MAGNETIC TUNNEL JUNCTIONS

 #6
20250063953
2025-02-20

MAGNETORESISTIVE STACK AND METHODS THEREFOR

 #7
20240387090
2024-11-21

MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME

 #8
20240357942
2024-10-24

TEXTURED COBALT ALUMINUM/MAGNESIUM-ALUMINUM-OXIDE PEDESTAL FOR MEMORY DEVICES

 #9
20240349620
2024-10-17

MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA

 #10
20240212907
2024-06-27

SUPERPARAMAGNETIC TUNNEL JUNCTION ELEMENT AND COMPUTING SYSTEM

 #11
20240087786
2024-03-14

MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME

 #12
20240062794
2024-02-22

CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)

 #13
20240040801
2024-02-01

Memory device and semiconductor die, and method of fabricating memory device

 #14
20230413683
2023-12-21

MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS

 #15
20230403948
2023-12-14

MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES AND METHODS OF FORMING THE SAME

 #16
20230294085
2023-09-21

SPIN TORQUE OSCILLATOR (STO) SENSORS USED IN NUCLEIC ACID SEQUENCING ARRAYS AND DETECTION SCHEMES FOR NUCLEIC ACID SEQUENCING

 #17
20230154662
2023-05-18

Magnonic electromagnetic radiation sources with high output power at high frequencies

 #18
20230109928
2023-04-13

Crystal seed layer for magnetic random access memory (MRAM)

 #19
20230067295
2023-03-02

Magnetoresistive element having a nano-current-channel structure

 #20
20230005651
2023-01-05

Nano spintronic device using spin current of ferromagnetic material and heavy metal channel

 #21
20220367098
2022-11-17

MRAM stacks and memory devices

 #22
20220352255
2022-11-03

Bidirectional Selector Device for Memory Applications

 #23
20220302371
2022-09-22

Magnetic storage device

 #24
20220246843
2022-08-04

TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION

 #25
20220216269
2022-07-07

Memory device and semiconductor die, and method of fabricating memory device

 #26
20220139435
2022-05-05

Spin-transfer torque magnetoresistive memory device with a free layer stack including multiple spacers and methods of making the same

 #27
20220037588
2022-02-03

Methods of manufacturing three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer

 #28
20220028929
2022-01-27

Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic laver

 #29
20220020918
2022-01-20

Method of fabricating magnetic memory device

 #30
20220002619
2022-01-06

Compositions of chiral molecules and perovskite nanocrystals and methods of making the same

 #31
20210359000
2021-11-18

MRAM device and methods of making such an MRAM device

 #32
20210351345
2021-11-11

TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION

 #33
20210343933
2021-11-04

Magnetic tunnel junction structures and related methods

 #34
20210313393
2021-10-07

Bidirectional selector device for memory applications

 #35
20210305494
2021-09-30

Embedded memory devices

 #36
20210288245
2021-09-16

MAGNETORESISTIVE STACK AND METHODS THEREFOR

 #37
20210247470
2021-08-12

Tunnel magnetoresistance sensor devices and methods of forming the same

 #38
20210217812
2021-07-15

Memory device using an etch stop dielectric layer and methods for forming the same

 #39
20210210677
2021-07-08

Magnetoresistive memory device including a magnesium containing dust layer

 #40
20210210676
2021-07-08

Magnetoresistive memory device including a magnesium containing dust layer

 #41
20210175414
2021-06-10

Nitride Diffusion Barrier Structure for Spintronic Applications

 #42
20210175284
2021-06-10

Magnetic memory devices and methods of fabrication

 #43
20210167277
2021-06-03

Magnetic memory device and method for manufacturing the same

 #44
20210159392
2021-05-27

Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same

 #45
20210159391
2021-05-27

Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same

 #46
20210119119
2021-04-22

Top buffer layer for magnetic tunnel junction application

 #47
20210118950
2021-04-22

System and method for efficient enhancement of an on/off ratio of a bitcell based on 3T2R binary weight cell with spin orbit torque MJTs (SOT-MTJs)

 #48
20210083179
2021-03-18

Encapsulation topography-assisted self-aligned MRAM top contact

 #49
20210065761
2021-03-04

Spin-transfer torque magnetoresistive memory device with a free layer stack including multiple spacers and methods of making the same

 #50
20210063506
2021-03-04

Magnetic sensor bias point adjustment method

 #51
20210036055
2021-02-04

Memory device and semiconductor die, and method of fabricating memory device

 #52
20210020830
2021-01-21

Dual magnetic tunnel junction (DMTJ) stack design

 #53
20210020827
2021-01-21

Magnetic memory structure

 #54
20210012940
2021-01-14

Magnetic memory structures using electric-field controlled interlayer exchange coupling (IEC) for magnetization switching

 #55
20200403152
2020-12-24

Top buffer layer for magnetic tunnel junction application

 #56
20200388425
2020-12-10

Semiconductor device and method of making the same

 #57
20200373052
2020-11-26

Magnetic multi-layers containing MgO sublayers as perpendicularly magnetized magnetic electrodes for magnetic memory technology

 #58
20200365308
2020-11-19

MRAM stacks, MRAM devices and methods of forming the same

 #59
20200350366
2020-11-05

Techniques for MRAM top electrode via connection

 #60
20200350365
2020-11-05

Techniques for MRAM top electrode via connection

 #61
20200324283
2020-10-15

Spin torque oscillator (STO) sensors used in nucleic acid sequencing arrays and detection schemes for nucleic acid sequencing

 #62
20200319269
2020-10-08

Magnetic sensor, sensor module, and diagnostic device

 #63
20200303635
2020-09-24

Multi-state memory and method for manufacturing the same

 #64
20200286537
2020-09-10

Spin-orbit torque magnetic memory device using alternating current

 #65
20200273510
2020-08-27

Perpendicular spin transfer torque MRAM memory cell with cap layer to achieve lower current density and increased write margin

 #66
20200266334
2020-08-20

Nitride diffusion barrier structure for spintronic applications

 #67
20200259071
2020-08-13

MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA

 #68
20200168790
2020-05-28

Magnetic memory device

 #69
20200136016
2020-04-30

Magnetic tunnel junction structures and related methods

 #70
20200127047
2020-04-23

Techniques for MRAM top electrode via connection

 #71
20200098982
2020-03-26

Techniques for MRAM MTJ top electrode connection

 #72
20200098499
2020-03-26

Magnetic tunnel junction with low series resistance

 #73
20200098408
2020-03-26

Crystal seed layer for magnetic random access memory (MRAM)

 #74
20200091420
2020-03-19

Apparatus and methods of fabricating a magneto-resistive random access memory (MRAM) device

 #75
20200091408
2020-03-19

Dual magnetic tunnel junction (DMTJ) stack design

 #76
20200082885
2020-03-12

Logic drive using standard commodity programmable logic IC chips comprising non-volatile random access memory cells

 #77
20200075840
2020-03-05

Magnetoresistive memory cell and method for fabricating the same

 #78
20200052196
2020-02-13

Avoiding Oxygen Plasma Damage During Hard Mask Etching in Magnetic Tunnel Junction (MTJ) Fabrication Process

 #79
20200049775
2020-02-13

Ultrasensitive magnetic tunneling junction sensor

 #80
20200041585
2020-02-06

Magnetic sensors with a mixed oxide passivation layer

 #81
20200035282
2020-01-30

Systems and methods for optimizing magnetic torque and pulse shaping for reducing write error rate in magnetoelectric random access memory

 #82
20200013444
2020-01-09

Magnetic structure based on synthetic antiferromagnetic free layer and derivative SOT-MRAM

 #83
20190392972
2019-12-26

Magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillation element

 #84
20190360878
2019-11-28

Stress sensor

 #85
20190355901
2019-11-21

Method of cleaning a substrate processing apparatus and the substrate processing apparatus performing the method

 #86
20190333966
2019-10-31

Tunnel magnetoresistive effect element, magnetic memory, and built-in memory

 #87
20190326506
2019-10-24

Magnetoresistive stacks and methods therefor

 #88
20190296230
2019-09-26

Methods of manufacturing three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer

 #89
20190296224
2019-09-26

Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic layer

 #90
20190288184
2019-09-19

Magnetic memory device

 #91
20190272934
2019-09-05

Sensor, microphone, and touch panel

 #92
20190267540
2019-08-29

SPIN CURRENT MAGNETIZED ROTATION ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

 #93
20190206940
2019-07-04

Vertically-strained silicon device for use with a perpendicular magnetic tunnel junction (PMTJ)

 #94
20190180901
2019-06-13

Magnetoresistance effect device

 #95
20190180900
2019-06-13

Tunnel magnetoresistive effect element

 #96
20190172997
2019-06-06

Memory device

 #97
20190131049
2019-05-02

Methods and apparatus for making magnetic skyrmions

 #98
20190109276
2019-04-11

MAGNETORESISTIVE ELEMENT, MEMORY ELEMENT, AND ELECTRONIC APPARATUS

 #99
20190006074
2019-01-03

Magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillation element

 #100
20180315535
2018-11-01

Magnetoresistance effect device and high frequency device

 #101
20180302035
2018-10-18

High-frequency phase-locked oscillation circuit

 #102
20180301622
2018-10-18

Method of cleaning and method of plasma processing

 #103
20180301266
2018-10-18

MAGNETIC STRUCTURES HAVING DUSTING LAYER

 #104
20170140804
2017-05-18

Magnetic junctions having elongated free layers

 #105
20170077391
2017-03-16

Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer

 #106
20170011757
2017-01-12

Magnetoresistive element, method of manufacturing magnetoresistive element, magnetic head, and magnetic recording/reproducing device

 #107
20160284983
2016-09-29

CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording

 #108
20150187375
2015-07-02

CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording

 #109
20150185296
2015-07-02

Magneto-resistive effect device, magnetic head gimbal assembly, magnetic recording/reproduction device, strain sensor, pressure sensor, blood pressure sensor, and structural health monitoring sensor

 #110
20150170836
2015-06-18

Method of manufacturing a CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer

 #111
20150108594
2015-04-23

Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer

 #112
20140362477
2014-12-11

Magneto-resistance effect device with mixed oxide function layer

 #113
20140284735
2014-09-25

Magnetoresistance effect element with shift canceling layer having pattern area greater than that of storage layer

 #114
20130221460
2013-08-29

Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications

 #115
20130216702
2013-08-22

Methods for manufacturing a magnetoresistive structure utilizing heating and cooling

 #116
20130177781
2013-07-11

Magnetic element having perpendicular anisotropy with enhanced efficiency

 #117
20130175644
2013-07-11

Spin torque transfer magnetic tunnel junction fabricated with a composite tunneling barrier layer

 #118
20130029182
2013-01-31

CoFe/Ni Multilayer film with perpendicular anisotropy for microwave assisted magnetic recording

 #119
20130029035
2013-01-31

CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording

 #120
20120245477
2012-09-27

Magneto-resistive effect device, magnetic head gimbal assembly, magnetic recording/reproduction device, strain sensor, pressure sensor, blood pressure sensor, and structural health monitoring sensor

 #121
20120229936
2012-09-13

MAGNETO-RESISTANCE EFFECT DEVICE, AND MAGNETIC RECORDER

 #122
20120206838
2012-08-16

Magnetoresistive element having free and/or pinned layer magnetic compound expressed by M1M2O

 #123
20120206837
2012-08-16

Magnetoresistive element, magnetic head assembly, and magnetic recording/reproducing apparatus

 #124
20120205757
2012-08-16

Pinning field in MR devices despite higher annealing temperature

 #125
20120135273
2012-05-31

Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions

 #126
20120129008
2012-05-24

Magneto-resistance effect element including diffusive electron scattering layer, magneto-resistance effect head, magnetic storage and magnetic memory

 #127
20120120708
2012-05-17

Method of switching out-of-plane magnetic tunnel junction cells

 #128
20120050920
2012-03-01

Method of manufacturing magnetoresistive element

 #129
20120049302
2012-03-01

Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory

 #130
20120015214
2012-01-19

Magneto-resistance effect element

 #131
20120012953
2012-01-19

Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements

 #132
20120009440
2012-01-12

Magnetoresistance effect element with a layer containing an oxide as a principal component and containing a magnetic transition metal element which does not bond to oxygen

 #133
20110279921
2011-11-17

CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording

 #134
20110273802
2011-11-10

Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer

 #135
20110265325
2011-11-03

CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer

 #136
20110254113
2011-10-20

ST-RAM magnetic element configurations to reduce switching current

 #137
20110198314
2011-08-18

Method to fabricate small dimension devices for magnetic recording applications

 #138
20110183158
2011-07-28

CPP structure with enhanced GMR ratio

 #139
20110179635
2011-07-28

Method of manufacturing a CPP structure with enhanced GMR ratio

 #140
20110096443
2011-04-28

MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application

 #141
20110026321
2011-02-03

Magnetic memory with porous non-conductive current confinement layer

 #142
20110019312
2011-01-27

Magneto-resistance effect element having a diffusive electron scattering layer, magneto-resistance effect head, magnetic storage and magnetic memory

 #143
20100315869
2010-12-16

Spin torque transfer MRAM design with low switching current

 #144
20100315863
2010-12-16

Magnetic tunnel junction device and fabrication

 #145
20100226048
2010-09-09

Magneto-resistance effect element including a damping factor adjustment layer, magneto-resistance effect head, magnetic storage and magnetic memory

 #146
20100214701
2010-08-26

Magnetoresistive effect element in CPP-type structure and magnetic disk device

 #147
20100155231
2010-06-24

Method and apparatus for manufacturing magnetoresistive devices

 #148
20100134196
2010-06-03

Spin-valve or tunnel-junction radio-frequency oscillator

 #149
20100128518
2010-05-27

Spin momentum transfer MRAM design

 #150
20100117170
2010-05-13

Magnetic memory with porous non-conductive current confinement layer

 #151
20100092803
2010-04-15

Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus

 #152
20100091415
2010-04-15

Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus

 #153
20100091414
2010-04-15

Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus

 #154
20100079918
2010-04-01

Method of manufacturing magnetoresistive element, magnetoresistive element, magnetic head assembly and magnetic recording apparatus

 #155
20100072524
2010-03-25

Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer

 #156
20100065935
2010-03-18

Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM

 #157
20100047929
2010-02-25

Underlayer for high performance magnetic tunneling junction MRAM

 #158
20100044680
2010-02-25

Underlayer for high performance magnetic tunneling junction MRAM

 #159
20100033881
2010-02-11

Magnetic field sensing system using spin-torque diode effect

 #160
20090325319
2009-12-31

Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same

 #161
20090314632
2009-12-24

FCC-like trilayer AP2 structure for CPP GMR EM improvement

 #162
20090303640
2009-12-10

MAGNETO-RESISTANCE EFFECT ELEMENT PROVIDED WITH CURRENT LIMITING LAYER INCLUDING MAGNETIC MATERIAL

 #163
20090297700
2009-12-03

Method for making a current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor with a confined-current-path (CCP)

 #164
20090269618
2009-10-29

Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system

 #165
20090269617
2009-10-29

Ultra low RA (resistance x area) sensors having a multilayer non-magnetic spacer between pinned and free layers

 #166
20090268352
2009-10-29

ST-RAM magnetic element configurations to reduce switching current

 #167
20090251829
2009-10-08

Seed layer for TMR or CPP-GMR sensor

 #168
20090244960
2009-10-01

Magnetoresistive effect element and magnetic memory

 #169
20090225477
2009-09-10

Tunnel barrier sensor with multilayer structure

 #170
20090194833
2009-08-06

TMR device with Hf based seed layer

 #171
20090162698
2009-06-25

Magnetoresistive effect element and manufacturing method thereof

 #172
20090141408
2009-06-04

Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory

 #173
20090140733
2009-06-04

Magnetic device and frequency detector

 #174
20090109581
2009-04-30

Magnetoresistance effect element with a layer containing an oxide as a principal component and containing a magnetic transition metal element which does not bond to oxygen

 #175
20090104475
2009-04-23

Magneto-resistance effect element

 #176
20090097166
2009-04-16

Magnetoresistive element, magnetic head and magnetic recording/reproducing apparatus

 #177
20090091865
2009-04-09

CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer

 #178
20090091864
2009-04-09

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-pinned layer containing silicon

 #179
20090086383
2009-04-02

CPP type magneto-resistive effect device and magnetic disk system

 #180
20090021869
2009-01-22

Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system

 #181
20080226948
2008-09-18

Magneto-resistance effect element having diffusion blocking layer and thin-film magnetic head

 #182
20080204943
2008-08-28

Magnetoresistive element having free layer magnetic compound expressed by M1M2O

 #183
20080204942
2008-08-28

Magnetic thin film having spacer layer that contains CuZn

 #184
20080171223
2008-07-17

TMR device with Hf based seed layer

 #185
20080170336
2008-07-17

Magneto-resistive effect device and magnetic disk system

 #186
20080129401
2008-06-05

High-frequency oscillator

 #187
20080106826
2008-05-08

CURRENT-PERPENDICULAR-TO-PLANE MAGNETORESISTANCE EFFECT DEVICE WITH DOUBLE CURRENT DOUBLE LAYERS

 #188
20080106825
2008-05-08

Current-perpendicular-to-plane magnetoresistance effect device with double current control layers

 #189
20080102315
2008-05-01

Method for manufacturing a magneto-resistance effect element having spacer layer

 #190
20080080098
2008-04-03

Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory

 #191
20080074806
2008-03-27

Magnetic oscillation element

 #192
20080068765
2008-03-20

Magnetoresistive effect element with resistance adjustment layer of semimetal, magnetic head and magnetic reproducing apparatus

 #193
20080068764
2008-03-20

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY

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20080062577
2008-03-13

Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory

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20080026253
2008-01-31

CPP TYPE GIANT MAGNETO-RESISTANCE ELEMENT AND MAGNETIC SENSOR

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20080023740
2008-01-31

Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same

 #197
20080008909
2008-01-10

Method for manufacturing a magneto-resistance effect element

 #198
20070297103
2007-12-27

Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications

 #199
20070296406
2007-12-27

Current induced magnetoresistance device

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20070268633
2007-11-22

Process and structure to fabricate CPP spin valve heads for ultra-high recording density

 #201
20070223150
2007-09-27

Magnetoresistive effect element, magnetic head, and magnetic disk apparatus

 #202
20070202249
2007-08-30

Method for manufacturing magnetoresistance effect element

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20070188945
2007-08-16

Magnetoresistive effect element, magnetic head and magnetic recording/reproducing apparatus

 #204
20070183098
2007-08-09

Magneto-resistance effect element and thin-film magnetic head

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20070177310
2007-08-02

Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus

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20070109147
2007-05-17

High-frequency oscillator with a stacked film including a magnetization pinned layer

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20070092639
2007-04-26

Method for manufacturing magnetoresistive element

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20070085068
2007-04-19

Spin transfer based magnetic storage cells utilizing granular free layers and magnetic memories using such cells

 #209
20070081276
2007-04-12

Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory

 #210
20070074317
2007-03-29

Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements

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20070070556
2007-03-29

FCC-like trilayer AP2 structure for CPP GMR EM improvement

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20070063237
2007-03-22

Magnetic device having multilayered free ferromagnetic layer

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20070063236
2007-03-22

Magnetic device having stabilized free ferromagnetic layer

 #214
20070035888
2007-02-15

Stabilizer for magnetoresistive head and method of manufacture

 #215
20070014054
2007-01-18

Method of manufacturing a CPP structure with enhanced GMR ratio

 #216
20070007609
2007-01-11

Magnetoresistive effect element and magnetic memory

 #217
20060192237
2006-08-31

Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements

 #218
20060181815
2006-08-17

Structure/method to form bottom spin valves for ultra-high density

 #219
20060181814
2006-08-17

Magnetoresistance effect element, having a nonmagnetic intermediate layer having a two-dimensional fluctuation of resistance

 #220
20060165881
2006-07-27

Ta based bilayer seed for IrMn CPP spin valve

 #221
20060164764
2006-07-27

Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system

 #222
20060162148
2006-07-27

Structure/method to form bottom spin valves for ultra-high density

 #223
20060119989
2006-06-08

Magnetoresistive sensor

 #224
20060098353
2006-05-11

Magnetoresistive element, magnetoresistive head, magnetic recording apparatus, and magnetic memory

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20060067017
2006-03-30

Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus

 #226
20060002184
2006-01-05

Underlayer for high performance magnetic tunneling junction MRAM

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20050248888
2005-11-10

Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads

 #228
20050201022
2005-09-15

Process and structure to fabricate CPP spin valve heads for ultra-high recording density

 #229
20050201020
2005-09-15

Magnetoresistive element, magnetic head, and magnetic recording and reproducing apparatus

 #230
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