Magnetic elements of amorphous based dual free layer structures and recording devices using such elements

Magnetic elements of amorphous based dual free layer structures and recording devices using such elements

Magnetoresistive sensor and fabrication method for a magnetoresistive sensor

SPIN VALVE WITH BIAS ALIGNMENT

Magnetoresistance element with extended linear response to magnetic fields

Spin valve with bias alignment

Nonvolatile magnetic memory device

Magnetoresistance element with improved response to magnetic fields

Oscillator and calculating device

Nonvolatile magnetic memory device

Spin valve magnetoresistance element with improved response to magnetic fields

Circuits and devices based on spin hall effect to apply a spin transfer torque with a component perpendicular to the plane of magnetic layers

Magnetoresistance element with improved response to magnetic fields

Magnetoresistance element with an improved seed layer to promote an improved response to magnetic fields

Magnetoresistance element with improved response to magnetic fields

Magnetoresistive element

Nonvolatile magnetic memory device

Magnetoresistive-based mixed anisotropy high field sensor

Method and system for providing dual magnetic tunneling junctions using spin-orbit interaction-based switching and memories utilizing the dual magnetic tunneling junctions

Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element

Storage element, method for manufacturing storage element, and memory

Magnetic device having a magnetic material in a contact structure coupled to a magnetic element and method of manufacture thereof

Magnetoresistive device and a writing method for a magnetoresistive device

Self-referenced MRAM cell with optimized reliability

Magnetoresistive element having free and/or pinned layer magnetic compound expressed by M1M2O

Magnetoresistive element and magnetic random access memory

Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements

Storage element, method for manufacturing storage element, and memory

Magnetic memory devices

Method of manufacturing magnetoresistive element having a pair of free layers

High GMR structure with low drive fields

Magnetic shielding in magnetic multilayer structures

Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element

Magnetic head having a multilayer magnetic film and method for producing the same

Fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory

Magnetic stack having assist layer

Heat assisted magnetic write element

SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION

Magnetic stack having assist layer

Magnetic shielding in magnetic multilayer structures

Nonvolatile magnetic memory device

Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer

Magnetoresistive element and method of manufacturing the same

Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element

Magnetic logic element with toroidal multiple magnetic films and a method of logic treatment using the same

Magnetoresistive effect element and magnetic memory

MAGNETO-RESISTANCE EFFECT ELEMENT INCLUDING STACK WITH DUAL FREE LAYER AND MAGNETIZED SHIELD ELECTRODE LAYERS

Multibit magnetic random access memory device

Method for manufacturing a magnetoresistive-effect device

MAGNETORESISTIVE DEVICE AND NONVOLATILE MAGNETIC MEMORY EQUIPPED WITH THE SAME

Magnetoresistive element

Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plan equilibrium magnetization

Magnetoresistive element having free layer magnetic compound expressed by M1M2O

DUAL CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH HEUSLER ALLOY FREE LAYER AND MINIMAL CURRENT-INDUCED NOISE

CURRENT-PERPENDICULAR-TO-PLANE MAGNETORESISTANCE EFFECT DEVICE WITH DOUBLE CURRENT DOUBLE LAYERS

Current-perpendicular-to-plane magnetoresistance effect device with double current control layers

Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film

CPP spin valve with long spin diffusion length AP1 layers

Magnetic oscillation element

Current perpendicular to plane (CPP) magnetoresistive sensor with improved pinned layer

EXCHANGE-COUPLED FILM, METHOD FOR MAKING EXCHANGE-COUPLED FILM, AND MAGNETIC SENSING ELEMENT INCLUDING EXCHANGE-COUPLED FILM

Magnetic disk apparatus

Magnetoresistive-effect device with a multi-layer magnetoresistive-effect film

Pedestals for use as part of magnetic read heads

Method of using xenon ion beams to improve track width definition

Process to manufacture CPP GMR read head

Process to manufacture magnetic tunnel junction read head

Magnetoresistive element and magnetic memory device

Process and structure to fabricate CPP spin valve heads for ultra-high recording density

Magnetoresistive element, magnetic head, magnetic storage unit, and magnetic memory unit

Dual-type tunneling magnetoresistance (TMR) elements

MAGNETORESISTANCE EFFECT DEVICE, MAGNETIC HEAD, MAGNETIC RECORDING SYSTEM, AND MAGNETIC RANDOM ACCESS MEMORY

Spin transfer magnetic element having low saturation magnetization free layers

Magnetic head

MAGNETIC DETECTING ELEMENT HAVING PINNED MAGNETIC LAYER WITH PINNED MAGNETIZATION DIRECTION AND FREE MAGNETIC LAYER FORMED ON PINNED MAGNETIC LAYER WITH NONMAGNETIC MATERIAL LAYER INTERPOSED BETWEEN WITH MAGNETIZATION DIRECTION CHANGING BY EXTERNAL MAGNET

Magnetic head with improved CPP sensor using Heusler alloys

Spin transfer based magnetic storage cells utilizing granular free layers and magnetic memories using such cells

Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements

Magnetoresistive (MR) elements having pinning layers formed from permanent magnetic material

Magnetoresistive (MR) elements having pinned layers with canted magnetic moments

Magnetic device having multilayered free ferromagnetic layer

Magnetic device having stabilized free ferromagnetic layer

Magnetoresistive effect element, magnetic head, magnetic storage device and magnetic memory device

Spin valve magnetoresistive sensor in current perpendicular to plane scheme

Magnetoresistive device and nonvolatile magnetic memory equipped with the same

Magnetoresistive effect element and magnetic memory

MAGNETIC SENSING ELEMENT INCLUDING FREE LAYER CONTAINING HALF-METAL

Magnetoresistive element including connection layers with magnetization alignment angles therebetween of 30 to 60° between metallic magnetic layers

Magnetic detection head and method for manufacturing the same

Spin valve-GMR element in which a non-metal laminate layer is provided as a free magnetic layer and method of manufacturing the same

Magnetic detection element and manufacturing the same

Ferromagnetic tunnel magnetoresistive devices and magnetic head

Magnetic detecting element with diffusion-preventing layer between spacer Cu and magnetic layer, and method of manufacturing the same

CPP-GMR read head sensor with synthetic free layer providing suppression of spin torque noise

Magnetic detective head comprising free layer

Magnetic detecting device having free layer or pinned layer formed by lamination of magnetic alloy and Cu layer and method of manufacturing magnetic detecting device

Magnetic detecting element having free layer formed of NiFe alloy and method of manufacturing the same

Magnetoresistive element and magnetic memory device

MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements

Method and system for providing a highly textured magnetoresistance element and magnetic memory

Ferromagnetic tunnel magnetoresistive devices and magnetic head

Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization

Method for manufacturing magnetic disk apparatus

Synthetic pattern exchange configuration for side reading reduction

Exchange coupling film and magnetic sensing element including the same

Magneto-resistive element, thin film magnetic head, magnetic head and magnetic recording/reproducing apparatus

Multi-bit magnetic random access memory device

Xenon ion beam to improve track width definition

Magnetosensitive device and method of manufacturing the same

Magnetic element utilizing spin transfer and an mram device using the magnetic element

Process and structure to fabricate CPP spin valve heads for ultra-high recording density

Magnetic element and magnetic element array

Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization

Perpendicular magnetization magnetic element utilizing spin transfer

Magnetoresistive element and magnetic memory device

Spin transfer magnetic element having low saturation magnetization free layers

Self-pinned double tunnel junction head

Magnetoresistive element having three-layer buffer layer, magnetic head, magnetic reproducing apparatus, and magnetic memory

Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element

Ferroelectric device including a unit element having a topological outline in a C-shape or a S-shape

Magnetic sensing element including magnetic layer composed of Heusler alloy disposed on underlayer having {111}-oriented fcc structure

Ferromagnetic tunnel magnetoresistive devices and magnetic head

Current-perpendicular-to-plane magnetoresistance effect device with double current control layers

Magnetic memory element utilizing spin transfer switching and storing multiple bits

Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film