Material having both negative spin polarization and negative anisotropy

Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications

Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications

Magnetic memory device and manufacturing method of the same

Hybrid oxide/metal cap layer for boron-free free layer

Magnetic sensor

Tunnel magnetoresistive effect element and magnetic memory

Varying energy barriers of magnetic tunnel junctions (MTJs) in different magneto-resistive random access memory (MRAM) arrays in a semiconductor die to facilitate use of MRAM for different memory applications

Magnetic junction device having an inter-layer stack between a hard magnetic layer and a reference layer, and associated magnetic random access memory

VARYING ENERGY BARRIERS OF MAGNETIC TUNNEL JUNCTIONS (MTJs) IN DIFFERENT MAGNETO-RESISTIVE RANDOM ACCESS MEMORY (MRAM) ARRAYS IN A SEMICONDUCTOR DIE TO FACILITATE USE OF MRAM FOR DIFFERENT MEMORY APPLICATIONS

Magnetoresistive element having an adjustable magnetostriction and magnetic device comprising this magnetoresistive element

Magnetoresistance element with increased operational range

Magnetoresistive effect device

Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications

Magnetic diffusion barriers and filter in PSTTM MTJ construction

Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer

Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications

Magnetoresistive element and magnetic memory

Magnetic memory element and memory device

Memory device

CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording

Free layer with out-of-plane anisotropy for magnetic device applications

Ferromagnetic tunnel junction element and method of driving ferromagnetic tunnel junction element

CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording

Magnetic sensor

Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer

Magnetic devices having perpendicular magnetic tunnel junction

Method of making a high thermal stability reference structure with out-of-plane anisotropy for magnetic device applications

Magnetic memory device and method of magnetic domain wall motion

High thermal stability reference structure with out-of-plane anisotropy for magnetic device applications

MR enhancing layer (MREL) for spintronic devices

MR enhancing layer (MREL) for spintronic devices

Free layer with out-of-plane anisotropy for magnetic device applications

Magnetoresistive-based mixed anisotropy high field sensor

Perpendicular STTMRAM device with balanced reference layer

Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer

Magnetoresistive element and magnetoresistive memory

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with multilayer reference layer including a Heusler alloy

Method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor containing a ferromagnetic alloy requiring post-deposition annealing

High thermal stability free layer with high out-of-plane anisotropy for magnetic device applications

High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications

Magnetoresistive effect element and magnetic random access memory using the same

Tunneling magnetoresistance (TMR) read sensor with a long diffusion path and ex-situ interfaces in a sense layer structure

Method and system for providing magnetic junctions having improved characteristics

Method and system for providing a magnetic tunneling junction using thermally assisted switching

METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH AN ANTIPARALLEL FREE (APF) STRUCTURE FORMED OF AN ALLOY REQUIRING POST-DEPOSITION HIGH TEMPERATURE ANNEALING

Magnetoresistance Device

Magnetic tunnel junction for MRAM applications

CoFe/Ni Multilayer film with perpendicular anisotropy for microwave assisted magnetic recording

CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording

Magnetic tunnel junction having coherent tunneling structure

Seed layer and free magnetic layer for perpindicular anisotropy in a spin-torque magnetic random access memory

TUNNELING MAGNETORESISTANCE (TMR) READ SENSOR WITH LOW-CONTACT-RESISTANCE INTERFACES

Composite free layer within magnetic tunnel junction for MRAM applications

Tunneling magnetoresistive effect element and spin MOS field-effect

Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same

Magnetic memory device and method of magnetic domain wall motion

Magnetic oscillation element and spin wave device

Magnetic random access memory and method of fabricating the same

Magnetic tunnel junction having coherent tunneling structure

Magnetic element with improved out-of-plane anisotropy for spintronic applications

TMR device with low magnetorestriction free layer

Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions

Magneto-resistance effect element including diffusive electron scattering layer, magneto-resistance effect head, magnetic storage and magnetic memory

Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same

Assisting FGL oscillations with perpendicular anisotropy for MAMR

MAGNETIC TUNNEL JUNCTION CELLS HAVING PERPENDICULAR ANISOTROPY AND ENHANCEMENT LAYER

Method of manufacturing magnetoresistive element

Method and system for providing magnetic tunneling junction elements having a biaxial anisotropy

Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layer

Magnetoresistance effect element with a layer containing an oxide as a principal component and containing a magnetic transition metal element which does not bond to oxygen

Seed layer and free magnetic layer for perpendicular anisotropy in a spin-torque magnetic random access memory

CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording

Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer

MR enhancing layer (MREL) for spintronic devices

Magnetic memory element, driving method for same, and nonvolatile storage device

CPP structure with enhanced GMR ratio

Method of manufacturing a CPP structure with enhanced GMR ratio

Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device

Self-pinned spin valve magnetoresistance effect film and magnetic sensor using the same, and rotation angle detection device

FERROMAGNETIC TUNNEL JUNCTION ELEMENT AND METHOD OF DRIVING FERROMAGNETIC TUNNEL JUNCTION ELEMENT

MANUFACTURING METHOD OF MAGNETIC RECORDING MEDIUM, MAGNETIC RECORDING MEDIUM, AND INFORMATION STORAGE DEVICE

MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application

Magnetic stack having assist layer

Magneto-resistance effect element having a diffusive electron scattering layer, magneto-resistance effect head, magnetic storage and magnetic memory

Magnetic tunnel junction having coherent tunneling structure

Magnetic tunnel junction device and fabrication

Magnetic stack having assist layer

Spin transistor and method of operating the same

SUBSTRATE STAGE, SPUTTERING APPARATUS PROVIDED WITH SAME, AND FILM FORMING METHOD

High performance MTJ element for STT-RAM and method for making the same

High performance MTJ elements for STT-RAM and method for making the same

High performance MTJ element for STT-RAM and method for making the same

Magnetic sensing device including a sense enhancing layer

Tunneling magneto-resistive spin valve sensor with novel composite free layer

Magnetoresistive device and magnetic random access memory

Magneto-resistance effect element including a damping factor adjustment layer, magneto-resistance effect head, magnetic storage and magnetic memory

TUNNEL MAGNETORESISTIVE THIN FILM AND MAGNETIC MULTILAYER FILM FORMATION APPARATUS

Current perpendicular to plane (CPP) magnetic read head

Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layer including amorphous layer

Process for manufacturing a magnetic tunnel junction (MTJ) device

Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers

MR device with synthetic free layer structure

MAGNETIC STACK HAVING REDUCED SWITCHING CURRENT

FABRICATING METHOD OF MAGNETORESISTIVE ELEMENT, AND STORAGE MEDIUM

FABRICATING METHOD OF MAGNETORESISTIVE ELEMENT, AND STORAGE MEDIUM

Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer

Underlayer for high performance magnetic tunneling junction MRAM

Underlayer for high performance magnetic tunneling junction MRAM

High performance magnetic tunnel barriers with amorphous materials

Low resistance tunneling magnetoresistive sensor with composite inner pinned layer

Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same

Current-perpendicular-to-plane (CPP) read sensor with smoothened multiple reference layers

Current perpendicular to plane magnetoresistive sensor employing half metal alloys for improved sensor performance

Tunnel magnetoresistance (TMR) structures with MGO barrier and methods of making same

Current-perpendicular-to-plane (CPP) read sensor with multiple ferromagnetic sense layers

TMR device with Hf based seed layer

Tunneling magnetoresistive effect element and spin MOS field-effect transistor

DUAL-LAYER FREE LAYER IN A TUNNELING MAGNETORESISTANCE (TMR) ELEMENT HAVING DIFFERENT MAGNETIC THICKNESSES

EXCHANGE-COUPLED ELEMENT AND MAGNETORESISTANCE EFFECT ELEMENT

Methods of fabricating exchange-coupling film, magnetoresistive element, and thin-film magnetic head

Method of forming a high performance tunneling magnetoresistive (TMR) element

TMR device with surfactant layer on top of CoFeB/CoFeinner pinned layer

TMR device with low magnetostriction free layer

Spin field effect transistor using half metal and method of manufacturing the same

Magnetoresistance effect element with a layer containing an oxide as a principal component and containing a magnetic transition metal element which does not bond to oxygen

FERROMAGNETIC TUNNEL JUNCTION ELEMENT, MAGNETIC RECORDING DEVICE AND MAGNETIC MEMORY DEVICE

TUNNELING MAGNETIC SENSING ELEMENT AND METHOD FOR MAKING THE SAME

Magnetoresistance effect element having resistance adjusting layer and thin-film insertion layer

High performance MTJ element for STT-RAM and method for making the same

Low resistance tunneling magnetoresistive sensor with composite inner pinned layer

Tunneling magnetic sensor including platinum layer and method for producing the same

Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same

Method of forming integrated circuit having a magnetic tunnel junction device

INTEGRATED CIRCUIT HAVING A MAGNETIC TUNNEL JUNCTION DEVICE

Tunneling magnetic sensor including free magnetic layer and magnesium protective layer disposed thereon

Magneto-resistance effect element having free layer including magnetostriction reduction layer and thin-film magnetic head

Tunneling magnetic sensing element and method for producing same

Magnetic random access memory with selective toggle memory cells

Magnetic random access memory with selective toggle memory cells

TUNNELING MAGNETIC SENSING ELEMENT AND METHOD FOR PRODUCING SAME

TUNNELING MAGNETIC SENSING ELEMENT HAVING FREE MAGNETIC LAYER INSERTED WITH NONMAGNETIC METAL LAYERS

Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance

Tunneling magnetic detecting element having insulation barrier layer and method for making the same

TUNNEL TYPE MAGNETIC SENSOR HAVING FIXED MAGNETIC LAYER OF COMPOSITE STRUCTURE CONTAINING CoFeB FILM, AND METHOD FOR MANUFACTURING THE SAME

TMR device with Hf based seed layer

TUNNELING MAGNETIC SENSING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

Tunneling magnetic sensing element including free magnetic layer and IrMn protective layer disposed thereon and method for manufacturing the same

MAGNETIC SENSOR AND MANUFACTURING METHOD THEREFOR

Tunnel-effect type magnetic sensor having free layer including non-magnetic metal layer

Tunneling magnetic sensing element including non-magnetic metal layer between magnetic layers

MAGNETORESISTIVE ELEMENT

CPP Magnetoresistive head with different thickness free layers for improved signal to noise ratio

Mg-Zn oxide tunnel barriers and method of formation

TUNNELING MAGNETIC SENSOR INCLUDING TIO-BASED INSULATING BARRIER LAYER AND METHOD FOR PRODUCING THE SAME

Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device

Hafnium doped cap and free layer for MRAM device

Tunneling magnetic sensing element having free layer containing CoFe alloy

Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance

Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same

CCP magnetoresistive effect device with Fe barrier layers inhibiting diffusion of Co atoms to Heusler alloy layers in fixed layer and free layer, and head, head-gimbal assembly and hard disk system including said device

Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications

Magnetic recording element including a thin film layer with changeable magnetization direction

Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device

CPP giant magnetoresistive element with particular bulk scattering coefficient

Magnetic random access memory with selective toggle memory cells

Magnetic sensing device including a sense enhancing layer

Systems and methods for flaw detection and monitoring at elevated temperatures with wireless communication using surface embedded, monolithically integrated, thin-film, magnetically actuated sensors, and methods for fabricating the sensors

Magnetoresistive (MR) elements having pinning layers formed from permanent magnetic material

Magnetoresistive (MR) elements having pinned layers with canted magnetic moments

Tunnel barriers based on rare earth element oxides

Tunnel barriers based on alkaline earth oxides

Process of manufacturing a TMR device

Method of manufacturing a CPP structure with enhanced GMR ratio

MAGNETIC SENSING ELEMENT INCLUDING FREE LAYER CONTAINING HALF-METAL

Magnetic sensor and manufacturing method therefor

Manufacturing method of a magnetic sensor

Spin valve-GMR element in which a non-metal laminate layer is provided as a free magnetic layer and method of manufacturing the same

Adiabatic rotational switching memory element including a ferromagnetic decoupling layer

CPP-GMR read head sensor with synthetic free layer providing suppression of spin torque noise

Magnetoresistive effect element having inner and outer pinned layers including a cobalt iron alloy

CPP magnetic detecting device containing NiFe alloy on free layer thereof

Magnetic detectible head comprising free layer

Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements

Structure/method to form bottom spin valves for ultra-high density

Structure/method to form bottom spin valves for ultra-high density

Tunneling magneto-resistive spin valve sensor with novel composite free layer

Tunneling magneto-resistive spin valve sensor with novel composite free layer

Magnetoresistive sensor

Magnetic sensing element with improved magnetic sensitivity stability and method for producing the same

Spin scattering and heat assisted switching of a magnetic element

Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus

Synthetic pattern exchange configuration for side reading reduction

Magnetoresistive element with oxide magnetic layers and metal magnetic films deposited thereon

Magnetic tunnel magneto-resistance device and magnetic memory using the same

Method for reactive sputter deposition of a magnesium oxide (MgO) tunnel barrier in a magnetic tunnel junction

Buffer (seed) layer in a high-performance magnetic tunneling junction MRAM

High performance magnetic tunnel barriers with amorphous materials

Underlayer for high performance magnetic tunneling junction MRAM

Magneto-resistive element, thin film magnetic head, magnetic head and magnetic recording/reproducing apparatus

Magneto-resistive element, magnetic head and magnetic storage apparatus

Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read head

Magnetic sensor, production process of the magnetic sensor and magnetic array suitable for the production process

Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling to an antiparallel pinned biasing layer

Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling

Magnetoresistive sensor having improved synthetic free layer

Self-pinned double tunnel junction head

Magnetoresistance effect element, magnetic head, and magnetic storage system using a giant magnetoresistance effect element

Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements

Exchange coupled film having improved current-carrying reliability and improved rate of change in resistance and magnetic sensing element using same

Magnetoresistive element and magnetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using the same

Magnetoresistive-effect thin film, magnetoresistive-effect element, and magnetoresistive-effect magnetic head

Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device

Magnetoresistance effect element

Magnetic sensing element including magnetic layer composed of Heusler alloy disposed on underlayer having {111}-oriented fcc structure

Magnetoresistance effect element

Magnetic tunnel junction and memory device including the same

Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system

Low resistance magnetic tunnel junction structure

Analog-to-digital conversion with magnetic tunnel junctions