Multilayer Structure for Reducing Film Roughness in Magnetic Devices

Large Dzyaloshinskii-Moriya Interaction and Perpendicular Magnetic Anisotrophy Induced by Chemisorbed Species on Ferromagnets

Magnetoresistive stack/structure and methods therefor

Magneto-ionic device with a solid state proton pump and methods for using the same

Magnetoresistive stack/structure and methods therefor

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

PSTTM device with bottom electrode interface material

Multilayer structure for reducing film roughness in magnetic devices

Free layer with out-of-plane anisotropy for magnetic device applications

Magnetoresistive element with oxygen getting layer having enhanced exchange bias and thermal stability for spintronic devices

Multilayer magnetic storage element and storage device

Electric field ferromagnetic resonance excitation method and magnetic function element employing same

MR enhancing layer (MREL) for spintronic devices

MR enhancing layer (MREL) for spintronic devices

Free layer with out-of-plane anisotropy for magnetic device applications

Method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor containing a ferromagnetic alloy requiring post-deposition annealing

MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY

Non-volatile magnetic memory element with graded layer

Non-volatile magnetic memory element with graded layer

Non-volatile magnetic memory element with graded layer

Non-volatile magnetic memory element with graded layer

Non-volatile magnetic memory element with graded layer

Non-volatile magnetic memory element with graded layer

Varyinig morphology in magnetic sensor sub-layers

Magnetoresistive effect element, magnetic memory, and magnetoresistive effect element manufacturing method

METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH AN ANTIPARALLEL FREE (APF) STRUCTURE FORMED OF AN ALLOY REQUIRING POST-DEPOSITION HIGH TEMPERATURE ANNEALING

Embedded magnetic random access memory (MRAM)

Magnetic tunnel junction having coherent tunneling structure

TMR device with novel free layer structure

TUNNELING MAGNETORESISTANCE (TMR) READ SENSOR WITH LOW-CONTACT-RESISTANCE INTERFACES

Storage element and storage device

Composite free layer within magnetic tunnel junction for MRAM applications

Magnetic element with enhanced coupling portion

Magnetic stack with oxide to reduce switching current

Non-volatile magnetic memory element with graded layer

Magnetic tunnel junction having coherent tunneling structure

Magnetic element with improved out-of-plane anisotropy for spintronic applications

MULTI-ANGLE HARD BIAS DEPOSITION FOR OPTIMAL HARD-BIAS DEPOSITION IN A MAGNETIC SENSOR

Non-volatile memory cell with lateral pinning

Magnetic memory element and storage device using the same

Method of manufacturing magnetoresistive element

Non-volatile magnetic memory element with graded layer

Magnetic memory with strain-assisted exchange coupling switch

Non-volatile magnetic memory element with graded layer

Magnetic stack with oxide to reduce switching current

MR enhancing layer (MREL) for spintronic devices

PROCESS FOR FABRICATING A LAYER OF AN ANTIFERROMAGNETIC MATERIAL WITH CONTROLLED MAGNETIC STRUCTURES

TMR device with novel free layer structure

CPP structure with enhanced GMR ratio

Method of manufacturing a CPP structure with enhanced GMR ratio

Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device

Magnetic tunnel junction having coherent tunneling structure

Method for providing a magnetic recording transducer

Spin torque transfer MRAM design with low switching current

Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same

SUBSTRATE STAGE, SPUTTERING APPARATUS PROVIDED WITH SAME, AND FILM FORMING METHOD

Embedded magnetic random access memory (MRAM)

Magnetic stack with oxide to reduce switching current

Magnetic memory with strain-assisted exchange coupling switch

Low resistance tunneling magnetoresistive sensor with composite inner pinned layer

Method for manufacturing a tunnel junction magnetoresistive sensor with improved performance and having a CoFeB free layer

Tunnel barrier sensor with multilayer structure

Method of forming a high performance tunneling magnetoresistive (TMR) element

TMR device with surfactant layer on top of CoFeB/CoFeinner pinned layer

Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory

METHODS AND STRUCTURES FOR EXCHANGE-COUPLED MAGNETIC MULTI-LAYER STRUCTURE WITH IMPROVED OPERATING TEMPERATURE BEHAVIOR

Method for manufacturing a magnetoresistive-effect device

Low resistance tunneling magnetoresistive sensor with composite inner pinned layer

Tunneling magnetic sensor including platinum layer and method for producing the same

MR device with surfactant layer within the free layer

AP1 layer for TMR device

Process of making an improved AP1 layer for a TMR device

Non-volatile magnetic memory element with graded layer

Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY

Magnetic disk apparatus

Tunnel magnetoresistive element and manufacturing method thereof

Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory

Magnetoresistive-effect device with a multi-layer magnetoresistive-effect film

Magnetic Thin Film For High Frequency, and Method of Manufacturing Same, and Magnetic Device

Method for manufacturing magnetoresistance effect element

Magnetization direction control method and application thereof to MRAM

Modification

TUNNEL TYPE MAGNETIC DETECTION ELEMENT IN WHICH FE COMPOSITION OF TOP/BOTTOM SURFACE OF INSULATING BARRIER LAYER IS ADJUSTED AND MANUFACTURING METHOD THEREOF

Control and manipulation of pinned layer remanence of a platinum manganese based bottom spin valve

Spin transfer magnetic element having low saturation magnetization free layers

Magneto-resistance effect element having Heusler alloy compounds adjacent to spacer layer

Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory

Method of making a magnetic sensing device having an insulator structure

Spin valve magnetoresistive sensor in current perpendicular to plane scheme

Process of manufacturing a TMR device

Method of manufacturing a CPP structure with enhanced GMR ratio

Magnetic detection element and manufacturing the same

Device having a structural element with magnetic properties, and method

Tunnel magnetoresistive effect element with limited electric popping output voltage

Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same

Tunneling magneto-resistive spin valve sensor with novel composite free layer

Magnetic sensing element with improved magnetic sensitivity stability and method for producing the same

Spin scattering and heat assisted switching of a magnetic element

Method of forming an improved AP1 layer for a TMR device

Method for manufacturing magnetic disk apparatus

Magnetic tunnel junction element structures and methods for fabricating the same

Techniques for spin-flop switching with offset field

Spin transfer magnetic element having low saturation magnetization free layers

Semiconductor storage device and production method therefor

TMR sensor with oxidized alloy barrier layer and method for forming the same

Exchange coupled film having improved current-carrying reliability and improved rate of change in resistance and magnetic sensing element using same

CPP GMR read head

Via AP switching

Tunneling magnetoresistive (TMR) sensor having a magnesium oxide barrier layer formed by a multi-layer process

System and method for skyrmion based logic device

Top electrode dome formation