MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM

Magnetic Memory Element Including Perpendicular Enhancement Layer and Oxide Cap Layer

MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM

Magnetic memory element including perpendicular enhancement layers and dual oxide cap layers

MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM

Magnonic electromagnetic radiation sources with high output power at high frequencies

Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)

Magnetic memory element incorporating dual perpendicular enhancement layers

Ferrimagnetic Heusler compounds with high spin polarization

Magnetoresistive element having a giant interfacial perpendicular magnetic anisotropy and method of making the same

RARE-EARTH ION DOPED THIN FILM TECHNOLOGIES

Spin-orbit torque device, method for fabricating a spin-orbit torque device and method for switching a switchable magnetization of a spin-orbit torque device

Magnetic tunneling junction with synthetic free layer for SOT-MRAM

Stress sensor and manufacturing method therefor

Magnetic memory element incorporating dual perpendicular enhancement layers

Spin-orbit torque-based switching device and method of fabricating the same

Magnetic sensor array with dual TMR film

High sensitivity TMR magnetic sensor

Magnetic sensor with dual TMR films and the method of making the same

Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)

Permanent magnet comprising an antiferromagnetic layer and a ferromagnetic layer

Magnetic memory element incorporating perpendicular enhancement layer

Magnetoresistive random access memory and method for manufacturing the same

Magnetic memory device

Apparatus for spin injection enhancement and method of making the same

PERPENDICULAR MRAM FREE LAYER WITH NB OXIDE CONTAINING CAPPING LAYER

Multiple hard mask patterning to fabricate 20nm and below MRAM devices

Method of manufacturing high annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory

Magnetic tunnel junction (MTJ) devices with a synthetic antiferromagnet (SAF) structure including a magnetic skyrmion

Apparatus and method for boosting signal in magnetoelectric spin orbit logic

Magnetoresistive device comprising chromium

Spin orbit torque (SOT) memory devices with enhanced tunnel magnetoresistance ratio and their methods of fabrication

Perpendicular spin transfer torque magnetic mechanism

Magnetic stack, multilayer, tunnel junction, memory point and sensor comprising such a stack

Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM)

Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment density

Magnetic memory element including magnesium perpendicular enhancement layer

Phase-locked spin torque oscillator array

Multiple hard mask patterning to fabricate 20nm and below MRAM devices

Magnetic device

Magnetic random access memory with perpendicular enhancement layer

Method and system for providing a diluted free layer magnetic junction usable in spin transfer or spin-orbit torque applications

PSTTM device with bottom electrode interface material

Magnetoresistive device comprising chromium

Apparatus for spin injection enhancement and method of making the same

Multi-layer magnetoelectronic device

Magnetic memory element with perpendicular enhancement layer

Magnetic memory element with iridium anti-ferromagnetic coupling layer

Method of producing a magnetic structure

Magnetoresistive device and method of forming the same

SPIN TRANSFER TORQUE MEMORY AND LOGIC DEVICES HAVING AN INTERFACE FOR INDUCING A STRAIN ON A MAGNETIC LAYER THEREIN

Magnetic memory element with composite perpendicular enhancement layer

Magnetic materials and devices comprising rare earth nitrides

ALLOY CRYSTALLISATION METHOD

High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory

Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer

Manufacturing method of magnetoresistive effect element

Spin valve element and method of manufacturing same

Magnetic random access memory with perpendicular interfacial anisotropy

Magnetic random access memory with tri-layer reference layer

In-situ annealing of a TMR sensor

Patterned magnetoresistive (MR) device with adjacent flux absorbing stripes

MULTIFERROIC NANOSCALE THIN FILM MATERIALS, METHOD OF ITS FACILE SYNTHESES AND MAGNETOELECTRIC COUPLING AT ROOM TEMPERATURE

Magnetic structures, methods of forming the same and memory devices including a magnetic structure

Magnetic memory element with composite fixed layer

Magnetic random access memory with perpendicular enhancement layer

Magnetic random access memory element having tantalum perpendicular enhancement layer

Magnetic tunnel junction with perpendicular enhancement layer and thin reference layer

Magnetic random access memory with perpendicular enhancement layer

Magnetic random access memory with perpendicular interfacial anisotropy

Quantum computing device spin transfer torque magnetic memory

Method of manufacturing spin torque oscillator

Method of producing a multi-layer magnetoelectronic device and magnetoelectronic device

Patterned MR device with controlled shape anisotropy

Patterned MR device with controlled shape anisotropy

Magnetic random access memory having perpendicular enhancement layer and interfacial anisotropic free layer

Magnetic random access memory having perpendicular composite reference layer

MR device with synthetic free layer structure

Magnetic random access memory having perpendicular enhancement layer

Perpendicular STTMRAM device with balanced reference layer

Magnetic memory and method of fabricating the same

MAGNETIC STRUCTURES, METHODS OF FORMING THE SAME AND MEMORY DEVICES INCLUDING A MAGNETIC STRUCTURE

Processes for in-situ annealing of TMR sensors

METHODS FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION STRUCTURE

Magnetic device with weakly exchange coupled antiferromagnetic layer

Magnetic tunnel junction device

Magnetic random access memory with field compensating layer and multi-level cell

Spin torque oscillator, method of manufacturing the same, magnetic recording head, magnetic head assembly, and magnetic recording apparatus

Fabrication of a coercivity hard bias using FePt containing film

Spin transfer MRAM device with novel magnetic synthetic free layer

Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers

MAGNETIC STACK STRUCTURE AND MANUFACTURING METHOD THEREOF

Preloading unwind data for non-intrusive backtracing

PROCESS FOR FABRICATING A LAYER OF AN ANTIFERROMAGNETIC MATERIAL WITH CONTROLLED MAGNETIC STRUCTURES

Semiconductor device and manufacturing method thereof

SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION

Method of manufacturing magnetoresistive element, sputter deposition chamber, apparatus for manufacturing magnetoresistive element having sputter deposition chamber, program and storage medium

MAGNETIZATION CONTROL METHOD, INFORMATION STORAGE METHOD, INFORMATION STORAGE ELEMENT, AND MAGNETIC FUNCTION ELEMENT

SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION

Electromagnetic wave detection methods and apparatus

Spin valve element and method of manufacturing same

Semiconductor device and manufacturing method thereof

Magnetic stack structure and manufacturing method thereof

Magnetic memory device

TUNNEL MAGNETORESISTIVE THIN FILM AND MAGNETIC MULTILAYER FILM FORMATION APPARATUS

Method and system for providing magnetic elements having enhanced magnetic anisotropy and memories using such magnetic elements

Magnetic Data Storage

MR device with synthetic free layer structure

System, method and apparatus for onset magnetic oxide layer for high performance perpendicular magnetic recording media

Magnetoresistive element and method of manufacturing the same

Tunnel magnetoresistive thin film

Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same

FCC-like trilayer AP2 structure for CPP GMR EM improvement

Semiconductor device and manufacturing method thereof

System having a TMR sensor with leads configured for providing joule heating

Binary output reader structure (BORS) with high utilization rate

Magnetic artificial superlattice and method for producing the same

MTJ sensor based method to measure an electric current

Patterned MR device with controlled shape anisotropy

TMR device with Hf based seed layer

MTJ sensor including domain stable free layer

Close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same

DUAL-LAYER FREE LAYER IN A TUNNELING MAGNETORESISTANCE (TMR) ELEMENT HAVING DIFFERENT MAGNETIC THICKNESSES

Magnetoresistive device

PROCESS FOR OBTAINING A THIN, INSULATING, SOFT MAGNETIC FILM OF HIGH MAGNETIZATION, CORRESPONDING FILM AND CORRESPONDING INTEGRATED CIRCUIT

MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF MAGNETORESISTANCE ELEMENTS

METHODS AND APPARATUS FOR A SYNTHETIC ANTI-FERROMAGNET STRUCTURE WITH IMPROVED THERMAL STABILITY

MAGNETO-RESISTANCE ELEMENT, MANUFACTURING METHOD THEREFOR, AND MAGNETIC HEAD

Magnetic sensing element and method for manufacturing the same

Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same

Magnetoresistive element, method of manufacturing the same, and magnetic multilayered film manufacturing apparatus

Method of forming integrated circuit having a magnetic tunnel junction device

INTEGRATED CIRCUIT HAVING A MAGNETIC DEVICE

Reorientation of magnetic layers and structures having reoriented magnetic layers

INTEGRATED CIRCUIT HAVING A MAGNETIC TUNNEL JUNCTION DEVICE

Reorientation of magnetic layers and structures having reoriented magnetic layers

MTJ sensor including domain stable free layer

Spin transfer MRAM device with novel magnetic synthetic free layer

Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plan equilibrium magnetization

Tunneling magnetic sensing element and method for producing same

MRAM FREE LAYER SYNTHETIC ANTIFERROMAGNET STRUCTURE AND METHODS

Method for Manufacturing a Magnetoresistive Multilayer Film

TUNNEL TYPE MAGNETIC SENSOR HAVING FIXED MAGNETIC LAYER OF COMPOSITE STRUCTURE CONTAINING CoFeB FILM, AND METHOD FOR MANUFACTURING THE SAME

TMR device with Hf based seed layer

TUNNELING MAGNETIC SENSING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

Tunneling magnetic sensing element including free magnetic layer and IrMn protective layer disposed thereon and method for manufacturing the same

Current-perpendicular-to-plane sensor epitaxially grown on a bottom shield

Tunneling magnetic sensing element including non-magnetic metal layer between magnetic layers

CPP Magnetoresistive head with different thickness free layers for improved signal to noise ratio

Method and apparatus for depositing a magnetoresistive multilayer film

Tunnel magnetoresistive effect element having a tunnel barrier layer of a crystalline insulation material and manufacturing method of tunnel magnetoresistive effect element

Magnetic tunnel junction structure and method

Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor

Tunneling magnetic sensing element having free layer containing CoFe alloy

Magnetoresistance element magnetic random access memory, magnetic head and magnetic storage device

Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same

Synthetic anti-ferromagnetic structure with non-magnetic spacer for MRAM applications

Magnetic recording element including a thin film layer with changeable magnetization direction

Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence

Dual-type tunneling magnetoresistance (TMR) elements

Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device

Magnetoresistance element employing Heusler alloy as magnetic layer

Seedlayer for high hard bias layer coercivity

Synthetic anti-ferromagnetic structure with non-magnetic spacer for MRAM applications

Magnetic sensor formed of magnetoresistance effect elements

Magnetic memory device and method of fabricating the same

Side reading reduced GMR for high track density

Side reading reduced GMR for high track density

Method and apparatus for depositing a magnetoresistive multilayer film

Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier

Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements

FCC-like trilayer AP2 structure for CPP GMR EM improvement

Magnetic memory device and method of fabricating the same

Stabilizer for magnetoresistive head and method of manufacture

Magnetic detection head and method for manufacturing the same

Spin valve-GMR element in which a non-metal laminate layer is provided as a free magnetic layer and method of manufacturing the same

Method for fabricating seed layer for spin valve sensor for magnetic heads for hard disk drives

Magnetic detecting element with diffusion-preventing layer between spacer Cu and magnetic layer, and method of manufacturing the same

Method and apparatus for testing tunnel magnetoresistive effect element, manufacturing method of tunnel magnetoresistive effect element and tunnel magnetoresistive effect element

Magnetoresistive element and method of manufacturing the same

Magnetic detecting element having free layer formed of NiFe alloy and method of manufacturing the same

Magnetic sensing element including free layer having gradient composition and method for manufacturing the same

Magnetoresistive effect element, magentic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device

Structure/method to form bottom spin valves for ultra-high density

Method of fabricating a polarizing layer on an interface

Structure/method to form bottom spin valves for ultra-high density

CPP magneto-resistive element, method of manufacturing CPP magneto-resistive element, magnetic head, and magnetic memory apparatus

CIP GMR enhanced by using inverse GMR material in AP2

MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements

Method and system for providing a highly textured magnetoresistance element and magnetic memory

Method of manufacturing a device with a magnetic layer-structure

Method for producing a spin valve transistor with stabilization

Spin scattering and heat assisted switching of a magnetic element

Process for obtaining a thin, insulating, soft magnetic film of high magnetization

Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization

Manufacturing apparatus of magnetoresistance elements

Spintronic device having a carbon nanotube array-based spacer layer and method of forming same

Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements

Magnetoresistive random access memory with reduced switching field variation

Reorientation of magnetic layers and structures having reoriented magnetic layers

Antiferromagnetic stabilized storage layers in GMRAM storage devices

Synthetic free layer for CPP GMR

Free layer for CPP GMR having iron rich NiFe

Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads

Method on manufacturing spin valve film

Magnetic sensor, production process of the magnetic sensor and magnetic array suitable for the production process

MRAM memory cell with a reference layer and method for fabricating

Magnetic element utilizing spin transfer and an mram device using the magnetic element

Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization

Perpendicular magnetization magnetic element utilizing spin transfer

Magnetic head having PtMn layer formed by ion beam deposition

Magnetic sensing device, method of forming the same, magnetic sensor, and ammeter

Giant magnetoresistance sensor with stitched longitudinal bias stacks and its fabrication process

Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads

Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads

Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads

MRAM devices with fine tuned offset

Synthetic antiferromagnetic structure for magnetoelectronic devices

Magnetoresistance effect element having a lower magnetic layer formed over a base substrate through a transition metal oxide layer having a predetermined orientation plane

Method of making amorphous alloys for semiconductor device

Method for forming a head having improved spin valve properties

Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device

Antiferromagnetic stabilized storage layers in GMRAM storage devices

Method for manufacturing a magnetoresistive multilayer film

Magnetoresistance effect element, method of manufacture thereof, magnetic storage and method of manufacture thereof

Method for reducing diffusion through ferromagnetic materials

Magnetoresistive random access memory with reduced switching field variation

Apparatus for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads having a first self-pinned layer extending under the hard bias layers

Method of manufacture of a magneto-resistive device

Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier

Method and apparatus for smoothing surfaces on an atomic scale