ClassID:

201859

H01F41/306 - CPC Classification

Classification description:

Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling conductive spacer

Recent Application in this class:
#1
20180158475
2018-06-07

Magnetoresistance element with improved response to magnetic fields

#2
20150194597
2015-07-09

Magnetoresistance element with improved response to magnetic fields

#3
20150192649
2015-07-09

Magnetoresistance element with an improved seed layer to promote an improved response to magnetic fields

#4
20150192648
2015-07-09

Magnetoresistance element with improved response to magnetic fields

#5
20140264675
2014-09-18

Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same

#6
20130064010
2013-03-14

Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same

#7
20120308846
2012-12-06

Ferromagnetic graphenes and spin valve devices including the same

#8
20120126905
2012-05-24

Assisting FGL oscillations with perpendicular anisotropy for MAMR

#9
20110236568
2011-09-29

Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same

#10
20110149670
2011-06-23

Spin valve device including graphene, method of manufacturing the same, and magnetic device including the spin valve device

#11
20110101477
2011-05-05

Method for manufacturing magnetic field detection devices and devices therefrom

#12
20110089940
2011-04-21

Magnetoresistive sensor employing nitrogenated Cu/Ag under-layers with (100) textured growth as templates for CoFe, CoFeX, and Co(MnFe)X alloys

#13
20100177561
2010-07-15

Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same

#14
20100039730
2010-02-18

Magnetic recording medium, method of manufacturing the same, and magnetic recording/reproducing apparatus

#15
20090147409
2009-06-11

MAGNETORESISTIVE ELEMENT, MAGNETIC SENSOR, AND METHOD OF PRODUCING THE MAGNETORESISTIVE ELEMENT

#16
20080106827
2008-05-08

Magneto-resistive effect device having a spacer layer of a semiconductor layer interposed between first and second nonmagnetic metal layers and a work function control layer for use in a thin-film magnetic head usable in a head gimbal assembly in a hard disk system

#17
20080024937
2008-01-31

CPP read sensor having constrained current paths made of lithographically-defined conductive vias with surrounding oxidized metal sublayers and method of making same

#18
20070268633
2007-11-22

Process and structure to fabricate CPP spin valve heads for ultra-high recording density

#19
20070144616
2007-06-28

Method for controlling magnetostriction in a free layer of a magnetoresistive sensor

#20
20060222112
2006-10-05

Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers

#21
20060221515
2006-10-05

Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer

#22
20060216836
2006-09-28

Method for manufacturing magnetic field detection devices and devices therefrom

#23
20050201022
2005-09-15

Process and structure to fabricate CPP spin valve heads for ultra-high recording density

#24
20050068692
2005-03-31

Spin valve sensor having one of two AP pinned layers made of cobalt