201860 ⎘
Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling insulating or semiconductive spacer
MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
#2METHOD FOR FORMING A PERPENDICULAR SPIN TORQUE OSCILLATOR (PSTO) INCLUDING FORMING A MAGNETO RESISTIVE SENSOR (MR) OVER A SPIN TORQUE OSCILLATOR (STO)
#3Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Interface Allowing for Improved Control of Oxidation
#4Magnetic random access memory and manufacturing method thereof
#5Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
#6High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices
#7Magnetic random access memory and manufacturing method thereof
#8Seed layer for multilayer magnetic materials
#9Magnetoresistive sensor and fabrication method for a magnetoresistive sensor
#10Magnetoresistive random access memory (MRAM) device
#11Reduction of Barrier Resistance X Area (RA) Product and Protection of Perpendicular Magnetic Anisotropy (PMA) for Magnetic Device Applications
#12Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM
#13Magnetoresistive random access memory (MRAM) device
#14Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
#15Hybrid oxide/metal cap layer for boron-free free layer
#16Seed layer for multilayer magnetic materials
#17Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation
#18PSTTM device with multi-layered filter stack
#19Magnetoresistance element with extended linear response to magnetic fields
#20Spin transfer torque cell for magnetic random access memory
#21High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices
#22Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM
#23Method of manufacturing a magnetoresistive random access memory device
#24Magnetic random access memory and manufacturing method thereof
#25Tunnel magnetic resistance element and method for manufacturing same
#26PSTTM device with free magnetic layers coupled through a metal layer having high temperature stability
#27PSTTM device with multi-layered filter stack
#28Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
#29Electronic device and method for fabricating the same using treatment with nitrogen and hydrogen
#30Perpendicular magnetic tunnel junction devices with high thermal stability
#31Spin transfer torque cell for magnetic random access memory
#32MAGNETIC ELEMENT AND METHOD OF FABRICATION THEREOF
#33Seed layer for multilayer magnetic materials
#34Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer
#35Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
#36Spin transfer torque cell for magnetic random access memory
#37Magnetic memory
#38Method of manufacturing a CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer
#39Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer
#40Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM
#41Method for manufacturing a magnetic tunnel junction device
#42Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same
#43Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
#44Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
#45Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
#46Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
#47Method of manufacturing magnetoresistive element
#48Inverted orthogonal spin transfer layer stack
#49Seed layer for multilayer magnetic materials
#50SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH TOPOGRAPHICALLY SMOOTH ELECTRODE AND METHOD TO FORM SAME
#51Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM
#52Magnetic memory and manufacturing method thereof
#53Magnetoresistance effect device and method of production of the same
#54Co/X and CoX multilayers with improved out-of-plane anisotropy for magnetic device applications
#55Storage element, method for manufacturing storage element, and memory
#56Magnetic sensor seed layer with magnetic and nonmagnetic layers
#57Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer
#58Magnetic tunnel junction with an improved tunnel barrier
#59High thermal stability free layer with high out-of-plane anisotropy for magnetic device applications
#60Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications
#61Methods for manufacturing a magnetoresistive structure utilizing heating and cooling
#62Memory cell with phonon-blocking insulating layer
#63Half metal trilayer TMR reader with negative interlayer coupling
#64Magnetic tunnel junction device and fabrication
#65Semiconductor device and method for fabricating the same
#66Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same
#67Magnetic tunnel junction for MRAM applications
#68Magnetic memory cell construction
#69MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER AND TUNNEL BARRIER
#70Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories
#71Spin transfer torque cell for magnetic random access memory
#72Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
#73Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same
#74Magnetic memory and manufacturing method thereof
#75Magnetic random access memory and method of fabricating the same
#76MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER AND TUNNEL BARRIER
#77TMR Device with Improved MgO Barrier
#78Spin torque magnetic integrated circuits and devices therefor
#79Magnetic tunnel junction with spacer layer for spin torque switched MRAM
#80Pinning field in MR devices despite higher annealing temperature
#81MTJ FILM AND METHOD FOR MANUFACTURING THE SAME
#82Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
#83Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions
#84TMR device with improved MgO barrier
#85Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same
#86Memory cell with phonon-blocking insulating layer
#87Ferromagnetic tunnel junction structure, and magneto-resistive element and spintronics device each using same
#88Magnetoresistive effect element, magnetic memory
#89MAGNETIC STACK STRUCTURE AND MANUFACTURING METHOD THEREOF
#90Spin torque magnetic integrated circuits and devices therefor
#91STRUCTURE AND METHOD FOR FABRICATING A MAGNETIC THIN FILM MEMORY HAVING A HIGH FIELD ANISOTROPY
#92Ferromagnetic preferred grain growth promotion seed layer for amorphous or microcrystalline MgO tunnel barrier
#93Storage element, method for manufacturing storage element, and memory
#94Magnetic tunnel junction device
#95Magnetic memory devices
#96Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy
#97Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer
#98Method for producing a magnetic tunnel junction and magnetic tunnel junction thus obtained
#99CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer
#100MAGNETORESISTIVE ELEMENT AND MAGNETIC RECORDING APPARATUS
#101MAGNETORESISTIVE EFFECT ELEMENT
#102Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same
#103Magnetic memory devices
#104MAGNETORESISTANCE ELEMENT, METHOD OF MANUFACTURING THE SAME, AND STORAGE MEDIUM USED IN THE MANUFACTURING METHOD
#105Magnetic memory cell construction
#106Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories
#107Semiconductor device and manufacturing method thereof
#108Spin torque magnetic integrated circuits and devices therefor
#109Magnetic tunnel junction devices, electronic devices including a magnetic tunneling junction device and methods of fabricating the same
#110Tunneling magnetoresistance read head having a cofe interface layer and methods for producing the same
#111Tunneling junction magnetoresistive effect element and manufacturing method thereof
#112Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions
#113Method for manufacturing magnetic field detection devices and devices therefrom
#114MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application
#115MAGNETORESISTANCE EFFECT DEVICE AND METHOD OF PRODUCTION OF THE SAME
#116Magnetoresistive sensor employing nitrogenated Cu/Ag under-layers with (100) textured growth as templates for CoFe, CoFeX, and Co(MnFe)X alloys
#117Magnetic memory cell construction
#118Method and apparatus for manufacturing magnetoresistive element
#119MAGNETORESISTANCE ELEMENT, METHOD OF MANUFACTURING THE SAME, AND STORAGE MEDIUM USED IN THE MANUFACTURING METHOD
#120Magnetic tunnel junction device and method for manufacturing the same
#121Method of manufacturing magnetic tunnel junction device and apparatus for manufacturing the same
#122MAGNETIZATION CONTROL METHOD, INFORMATION STORAGE METHOD, INFORMATION STORAGE ELEMENT, AND MAGNETIC FUNCTION ELEMENT
#123Magnetic tunnel junction device and method for manufacturing the same
#124Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
#125METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING IMPROVED PERFORMANCE THROUGH CAPPING LAYER INDUCED PERPENDICULAR ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS
#126Method for providing a magnetic recording transducer
#127Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
#128Spin torque transfer MRAM design with low switching current
#129Magnetic tunnel junction device and fabrication
#130Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
#131Semiconductor device and manufacturing method thereof
#132Magnetic stack structure and manufacturing method thereof
#133High performance MTJ element for STT-RAM and method for making the same
#134High performance MTJ elements for STT-RAM and method for making the same
#135High performance MTJ element for STT-RAM and method for making the same
#136Magnetoresistive element including upper electrode having hexagonal cross-section shape and method of manufacturing the same
#137Spin transistor and method of manufacturing the same
#138Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same
#139Fabrication process for magnetoresistive devices of the CPP type
#140Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus
#141Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus
#142Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus
#143FABRICATING METHOD OF MAGNETORESISTIVE ELEMENT, AND STORAGE MEDIUM
#144Method of manufacturing magnetoresistive element, magnetoresistive element, magnetic head assembly and magnetic recording apparatus
#145FABRICATING METHOD OF MAGNETORESISTIVE ELEMENT, AND STORAGE MEDIUM
#146Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM
#147Underlayer for high performance magnetic tunneling junction MRAM
#148Underlayer for high performance magnetic tunneling junction MRAM
#149Magnetic memory cell construction
#150High performance magnetic tunnel barriers with amorphous materials
#151MRAM device structure employing thermally-assisted write operations and thermally-unassisted self-referencing operations
#152System and method to fabricate magnetic random access memory
#153METHOD OF FABRICATING AND APPARATUS OF FABRICATING TUNNEL MAGNETIC RESISTIVE ELEMENT
#154Magnetoresistive head including magnetoresistive effect film of fixed layer, non-magnetic layer, insulating barrier layer and free layer, and magnetic recording device with magnetoresistive head
#155Method for making a current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor with a confined-current-path (CCP)
#156Current-perpendicular-to-plane (CPP) read sensor with smoothened multiple reference layers
#157Semiconductor device and manufacturing method thereof
#158Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconductor layer alternatively of magnetic material
#159Ultra low RA (resistance x area) sensors having a multilayer non-magnetic spacer between pinned and free layers
#160Tunnel magnetoresistance (TMR) structures with MGO barrier and methods of making same
#161Magnetoresistive sensor with sub-layering of pinned layers
#162MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
#163Seed layer for TMR or CPP-GMR sensor
#164Spin-dependent tunnelling cell and method of formation thereof
#165MAGNETO RESISTANCE EFFECT DEVICE, HEAD SLIDER, MAGNETIC INFORMATION STORAGE APPARATUS, AND MAGNETO RESISTANCE EFFECT MEMORY
#166METHOD FOR MANUFACTURING TUNNELING MAGNETORESISTIVE FILM
#167CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer
#168CPP type magneto-resistive effect device and magnetic disk system
#169Method of Manufacturing Magnetic Multi-layered Film
#170TUNNELING MAGNETIC SENSING ELEMENT AND METHOD FOR MAKING THE SAME
#171High performance MTJ element for STT-RAM and method for making the same
#172Magnetoresistive effect element with intermediate oxide layer containing boron and an element selected from Ca, Mg, Sr, Ba, Ti, and Sc
#173METHOD OF MAKING A TMR SENSOR HAVING A TUNNEL BARRIER WITH GRADED OXYGEN CONTENT
#174MAGNETORESISTIVE EFFECT ELEMENT
#175MRAM tunnel barrier structure and methods
#176Highly charged ion modified oxide device and method of making same
#177SyAF structure to fabricate Mbit MTJ MRAM
#178METHOD FOR MANUFACTURING A MAGNETIC TUNNEL JUNCTION SENSOR USING ION BEAM DEPOSITION
#179Magnetic thin film having spacer layer that contains CuZn
#180Tunneling magnetic detecting element having insulation barrier layer and method for making the same
#181METHOD OF PRODUCTION OF A MAGNETORESISTANCE EFFECT DEVICE
#182Tunnel magnetoresistive effect element and thin-film magnetic head with tunnel magnetoresistive effect read head element
#183Mg-Zn oxide tunnel barriers and method of formation
#184Method of production of a magnetoresistance effect device
#185TUNNELING MAGNETIC SENSOR INCLUDING TIO-BASED INSULATING BARRIER LAYER AND METHOD FOR PRODUCING THE SAME
#186Thin-film forming method, thin-film forming apparatus, and multilayer film
#187Magnetoresistance effect element and method of producing the same
#188MAGNETORESISTANCE EFFECT DEVICE
#189CPP TYPE GIANT MAGNETO-RESISTANCE ELEMENT AND MAGNETIC SENSOR
#190Manufacturing method of tunnel magnetoresistive effect element, manufacturing method of thin-film magnetic head, and manufacturing method of magnetic memory
#191MANUFACTURING METHOD OF TUNNEL MAGNETORESISTIVE EFFECT ELEMENT, MANUFACTURING METHOD OF THIN-FILM MAGNETIC HEAD, AND MANUFACTURING METHOD OF MAGNETIC MEMORY
#192Method for fabricating magnetic tunnel junction device
#193MgO/NiFe MTJ for high performance MRAM application
#194Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
#195TMR element having a tunnel barrier which includes crystalline portions and non-crystalline portions
#196Tunnel barriers based on rare earth element oxides
#197Tunnel barriers based on alkaline earth oxides
#198Magnetic tunnel junction sensor method
#199Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy
#200Magnetoresistive memory cell and process for producing the same
#201Method for manufacturing magnetic field detection devices and devices therefrom
#202Method of manufacturing magnetic random access memory including middle oxide layer
#203Magnet tunneling junction with RF sputtered gallium oxide as insulation barrier for recording head
#204Ta based bilayer seed for IrMn CPP spin valve
#205Magnetoresistance effect device and method of production of the same
#206Method for reactive sputter deposition of a magnesium oxide (MgO) tunnel barrier in a magnetic tunnel junction
#207Buffer (seed) layer in a high-performance magnetic tunneling junction MRAM
#208High performance magnetic tunnel barriers with amorphous materials
#209Underlayer for high performance magnetic tunneling junction MRAM
#210Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read head
#211Magnetic tunnel junctions with improved tunneling magneto-resistance
#212Magnetosensitive device and method of manufacturing the same
#213TMR sensor with oxidized alloy barrier layer and method for forming the same
#214Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy
#215Magnetic tunnel junction with improved tunneling magneto-resistance