207092 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof; Forming layers; Forming inorganic semiconducting materials on a substrate; Deposited layers Structure
Sub-classes:SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#2SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, CHIP, AND ELECTRONIC DEVICE
#3LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUBSTRATES
#4EPITAXIAL BLOCKING LAYER FOR MULTI-GATE DEVICES AND FABRICATION METHODS THEREOF
#5LARGE-AREA III-V SEMICONDUCTOR LAYER TRANSFERRING METHOD
#6METHOD FOR PRODUCING LAMINATE, PRODUCING APPARATUS FOR LAMINATE, LAMINATE, AND SEMICONDUCTOR DEVICE
#7Multilayer film structure and method for producing same
#8LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUBSTRATES
#9STRAIN RELIEF TRENCHES FOR EPITAXIAL GROWTH
#10METHODS OF FORMING SILICON GERMANIUM STRUCTURES
#11LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUBSTRATES
#12Epitaxial blocking layer for multi-gate devices and fabrication methods thereof
#13Strain relief trenches for epitaxial growth
#14Method for manufacturing pillar-shaped semiconductor device
#15Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure
#16LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUBSTRATES
#17Leakage-free implantation-free ETSOI transistors
#18Transistor structure with N/P boundary buffer
#19Epitaxial blocking layer for multi-gate devices and fabrication methods thereof
#20Transistor with strained superlattice as source/drain region
#21Transistor structure with n/p boundary buffer
#22Layered substrate for microelectronic devices
#23TRANSITION METAL DICHALCOGENIDE THIN FILM, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE COMPRISING THE SAME
#24Three-dimensionally stretchable single crystalline semiconductor membrane
#25Semiconductor Structures Which Include Laminates of First and Second Regions, and Methods of Forming Semiconductor Structures
#26Method for producing a semiconductor component
#27Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure
#28Inverted T channel field effect transistor (ITFET) including a superlattice
#29Method for making an inverted T channel field effect transistor (ITFET) including a superlattice
#30Semiconductor arrangement
#31Nanosheet semiconductor structure with inner spacer formed by oxidation
#32Method of fabricating graphene structure having nanobubbles
#33Nano flake defect passivation method and electronic device manufactured using the same
#34Nanosheet semiconductor structure with inner spacer formed by oxidation
#35Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure
#36Method of manufacturing a semiconductor device having graphene material
#37Method of fabricating device including two-dimensional material
#38Method of fabricating device including two-dimensional material
#39VERTICAL-TYPE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
#40Crystalline multilayer structure and semiconductor device
#41Heterostructure with Stress Controlling Layer
#42Non-volatile memory structures having multi-layer conductive channels
#43Femtosecond laser-induced formation of single crystal patterned semiconductor surface
#44Liquid crystal display panel having an active layer comprising more than two film layers and method for manufacturing the same
#45Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof
#46Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof
#47ROOM TEMPERATURE METHOD FOR THE PRODUCTION OF ELECTROTECHNICAL THIN LAYERS, THE USE OF SAME, AND A THIN LAYER HEATING SYSTEM OBTAINED IN THIS MANNER
#48Method of semiconductor arrangement formation
#49Graphene-based solid state devices capable of emitting electromagnetic radiation and improvements thereof
#50Laser irradiation induced surface planarization of polycrystalline silicon films
#51Methods for forming fin structures with desired profile for 3D structure semiconductor applications
#52Semiconductor device
#53Method for producing a semiconductor device including semiconductor pillar and fin
#54Leakage-free implantation-free ETSOI transistors
#55Power storage device and method for manufacturing the same
#56Semiconductor device having a graphene layer, and method of manufacturing thereof
#57COMPOSITE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THEREOF
#58Solid phase epitaxy of 3C-SiC on Si(001)
#59Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure
#60Leakage-free implantation-free ETSOI transistors
#61Multilayer graphene, method of forming the same, device including the multilayer graphene, and method of manufacturing the device
#62Melt-growth of single-crystal alloy semiconductor structures and semiconductor assemblies incorporating such structures
#63Manufacturing method of semiconductor structure for improving quality of epitaxial layers
#64Method of fabricating crystalline island on substrate
#65Film formation method, vacuum processing apparatus, method of manufacturing semiconductor light emitting element, semiconductor light emitting element, method of manufacturing semiconductor electronic element, semiconductor electronic element, and illuminating apparatus
#66III-V fin generation by lateral growth on silicon sidewall
#67Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure
#68Silicon carbide single-crystal substrate, silicon carbide epitaxial substrate and method of manufacturing them
#69Oxide for semiconductor layer of thin-film transistor, semiconductor layer of thin-film transistor having said oxide, and thin-film transistor
#70Leakage-free implantation-free ETSOI transistors
#71Method for preparing substrate using germanium condensation process and method for manufacturing semiconductor device using same
#72Vertical-type semiconductor devices and methods of manufacturing the same
#73Heterostructure with stress controlling layer
#74Formation of dislocation-free SiGe finFET using porous silicon
#75Method for forming FinFET devices
#76Method for producing a semiconductor device
#77Thin film transistor and fabrication method thereof, and display device
#78Method for processing a carrier and an electronic component
#79Method for forming FinFET devices
#80Semiconductor device formed with nanowire
#81Semiconductor devices
#82Depression filling method and processing apparatus
#83SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME
#84Method of forming a graphene structure
#85Semiconductor devices with graphene nanoribbons
#86Silicon-germanium fin of height above critical thickness
#87Active structures of a semiconductor device and methods of manufacturing the same
#88Oxide semiconductor film
#89Method and structure to improve film stack with sensitive and reactive layers
#90Substrate with silicon carbide film, method for producing substrate with silicon carbide film, and semiconductor device
#91Lattice matched aspect ratio trapping to reduce defects in III-V layer directly grown on silicon
#92Solid phase epitaxy of 3C—SiC on Si(001)
#93Method of semiconductor device fabrication
#94Semiconductor device and manufacturing method thereof
#95Self aligned replacement Fin formation
#96Epitaxial growth of silicon for FinFETS with non-rectangular cross-sections
#97Method for producing semiconductor device and semiconductor device
#98Method of semiconductor arrangement formation
#99Method for producing semiconductor device and semiconductor device
#100Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
#101Chemical sensors based on plasmon resonance in graphene
#102Segmented graphene growth on surfaces of a patterned substrate layer and devices thereof
#103Surface profile for semiconductor region
#104Method of selective filling of memory openings
#105Method for forming a multiple layer epitaxial layer on a wafer
#106Method for producing semiconductor device and semiconductor device
#107Crystalline multilayer structure and semiconductor device
#108Methods of forming low-defect strain-relaxed layers on lattice-mismatched substrates and related semiconductor structures and devices
#109Vertical-type semiconductor devices and methods of manufacturing the same
#110Absorber layer for photovoltaic device, and method of making the same
#111Metal replacement process for low resistance source contacts in 3D NAND
#112Light emitting device including shaped substrate
#113Graphene-based solid state devices capable of emitting electromagnetic radiation and improvements thereof
#114In-situ straining epitaxial process
#115Semiconductor devices and methods of manufacturing the same
#116Three dimensional compositional profile in CIS-based absorber layers of thin film solar cells
#117Method of producing epitaxial silicon wafer and epitaxial silicon wafer
#118Method of manufacturing a semiconductor device and a semiconductor device
#119Method of forming Ga2O3-based crystal film and crystal multilayer structure
#120SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
#121Trimming silicon fin width through oxidation and etch
#122U-shaped semiconductor structure
#123Methods of forming stressed multilayer FinFET devices with alternative channel materials
#124Semiconductor device having embedded strain-inducing pattern
#125Semiconductor structure with increased space and volume between shaped epitaxial structures
#126Transistor and method for forming the same
#127Semiconductor devices with graphene nanoribbons
#128Heterostructure including a composite semiconductor layer
#129Growth of cubic crystalline phase strucure on silicon substrates and devices comprising the cubic crystalline phase structure
#130Semiconductor device with non-linear surface
#131Semiconductor device and manufacturing method thereof
#132Method of forming strain-relaxed buffer layers
#133Semiconductor arrangement
#134Fin pitch scaling and active layer isolation
#135Method of fabricating a thin-film device
#136Rare-earth oxide isolated semiconductor fin
#137Semiconductor nano layer structure and manufacturing method thereof
#138Method of forming semiconductor device having embedded strain-inducing pattern
#139FinFET with multiple concentration percentages
#140SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#141Method for forming a strained semiconductor structure
#142Oxide semiconductor film and formation method thereof
#143Method of forming strained source and drain regions in a P-type finFET structure
#144Method for producing different populations of molecules or fine particles with arbitrary distribution forms and distribution densities simultaneously and in quantity, and masking
#145Method for separating epitaxial layer from growth substrate
#146NANOCOMPOSITE AND METHOD OF MAKING THEREOF
#147Epitaxial wafer, method for producing the same, semiconductor element, and optical sensor device
#148Selective epitaxial growth of semiconductor materials with reduced defects
#149SINGLE-CRYSTAL OXIDE SEMICONDUCTOR, THIN FILM, OXIDE STACK, AND FORMATION METHOD THEREOF
#150Spacer replacement for replacement metal gate semiconductor devices
#151U-shaped semiconductor structure
#152Methods for producing complex films, and films produced thereby
#153Methods of forming hetero-layers with reduced surface roughness and bulk defect density of non-native surfaces and the structures formed thereby
#154Spacer assisted pitch division lithography
#155High quality devices growth on pixelated patterned templates
#156Surface profile for semiconductor region
#157Semiconductor device manufacturing method
#158SiC single crystal, production method therefor, SiC wafer and semiconductor device
#159Compound semiconductor device with mesa structure
#160Layered semiconductor substrate with reduced bow having a group III nitride layer and method for manufacturing it
#161SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
#162Method for substrate pretreatment to achieve high-quality III-nitride epitaxy
#163PECVD deposition of smooth silicon films
#164Semiconductor devices having modulated nanowire counts
#165Epitaxy technique for reducing threading dislocations in stressed semiconductor compounds
#166Rare-earth oxide isolated semiconductor fin
#167N-doped single crystal diamond substrates and methods therefor
#168SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING THEM
#169Modification of silicon layers formed from silane-containing formulations
#170SUPPRESSION OF RELAXATION BY LIMITED AREA EPITAXY ON NON-C-PLANE (In,Al,B,Ga)N
#171Vertical-type semiconductor devices and methods of manufacturing the same
#172Silicon carbide semiconductor device and method for manufacturing same
#173METHODS FOR THE EPITAXIAL GROWTH OF SILICON CARBIDE
#174Method of manufacturing semiconductor device
#175Semiconductor device and manufacturing method thereof
#176METHOD FOR DOPING A SEMICONDUCTOR SUBSTRATE, AND SOLAR CELL HAVING TWO-STAGE DOPING
#177Semiconductor device and method
#178SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
#179Method for manufacturing epitaxial crystal substrate, epitaxial crystal substrate and semiconductor device
#180Method of increasing the germanium concentration in a silicon-germanium layer and semiconductor device comprising same
#181Nanocomposite and method of making thereof
#1823-dimensional graphene structure and process for preparing and transferring the same
#183Production method of a layered body
#184METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION
#185PHOTOVOLTAIC DEVICE
#186Silicon carbide epitaxial wafer and manufacturing method therefor
#187PECVD DEPOSITION OF SMOOTH POLYSILICON FILMS
#188Method of manufacturing ESD resistant nitride semiconductor light emitting device with enhanced light extraction efficiency
#189Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas
#190Vertical-type semiconductor devices and methods of manufacturing the same
#191Method of manufacturing a semiconductor device and substrate processing apparatus
#192Nano-wire solar cell or detector
#193Semiconductor device and manufacturing method thereof
#194Epitaxial silicon carbide monocrystalline substrate and method of production of same
#195Nanochannel device and method for manufacturing thereof
#196Power storage device and method for manufacturing the same
#197Optoelectronic semiconductor chip and method for the production thereof
#198Epitaxial structures and methods of forming the same
#199Method for producing different populations of molecules or fine particles with arbitrary distribution forms and distribution densities simultaneously and in quantity, and masking member therefor
#200Nitride semiconductor device
#201Tubular Photovoltaic Device and Method of Making
#202METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
#203COMPOSITE WAFERS AND SUBSTRATES FOR III-NITRIDE EPITAXY AND DEVICES AND METHODS THEREFOR
#204Method of fabricating a thin-film device
#205DOUBLE-SIDED HETEROJUNCTION SOLAR CELL BASED ON THIN EPITAXIAL SILICON
#206Laser Process for Minimizing Variations in Transistor Threshold Voltages
#207Selective deposition of germanium spacers on nitride
#208Silicon epitaxial wafer and method for production thereof
#209Controlled polarity group III-nitride films and methods of preparing such films
#210Selective epitaxial growth of semiconductor materials with reduced defects
#211Semiconductor heterostructure and method for forming same
#212Systems and methods of laser texturing and crystallization of material surfaces
#213Method of making group III nitride-based compound semiconductor
#214Germanium substrate-type materials and approach therefor
#215Nitride semiconductor light emitting device and method of manufacturing the same
#216Systems and Methods of Laser Texturing of Material Surfaces and their Applications
#217TEXTURED SEMICONDUCTOR LIGHT-EMITTING DEVICES
#218ROUGH STRUCTURE OF OPTOELECTRONIC DEVICE AND FABRICATION THEREOF
#219Epitaxially coated silicon wafer with 110 orientation and method for producing it
#220Vertical-type semiconductor devices
#221Thin film transistor having a three-portion gate electrode and liquid crystal display using the same
#222Method of manufacturing thin film transistor
#223Semiconductor structure having multilayer of polysilicon and display panel applied with the same
#224Laser assisted nano deposition
#225Semiconductor device and method of processing the same
#226Germanium substrate-type materials and approach therefor
#227COMPOUND SEMICONDUCTOR DEVICE WITH MESA STRUCTURE
#228Growth of planar, non-polar, group-III nitride films
#229Composite wafers having bulk-quality semiconductor layers and method of manufacturing thereof
#230Group III Nitride Semiconductor Device and Epitaxial Substrate
#231Selective deposition of germanium spacers on nitride
#232Method of manufacturing semiconductor device with crystallized semiconductor film
#233Methods of forming a pattern and methods of manufacturing a memory device using the same
#234Thin-film device and method of fabricating the same
#235Use of tungsten interlayer to enhance the initial nucleation and conformality of ultrananocrystalline diamond (UNCD) thin films
#236Method of fabricating n-type semiconductor diamond, and semiconductor diamond
#237Thin film transistor having a three-portion gate electrode and liquid crystal display using the same
#238Semiconductor Devices Having Epitaxial Layers with Suppressed Lateral Growth and Related Methods of Manufacturing Such Devices
#239Selective deposition of germanium spacers on nitride
#240Semiconductor heterostructure and method for forming same
#241Process for preparing p-n junctions having a p-type ZnO film
#242Methods of combining silicon and III-nitride material on a single wafer
#243Method of manufacturing semiconductor device
#244Controlled polarity group III-nitride films and methods of preparing such films
#245Semiconductor structure having multilayer of polysilicon and display panel applied with the same
#246Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate
#247Thin film transistor and method of manufacturing the same
#248Method and system for focused ion beam directed self-assembly of metal oxide island structures
#249Method for forming polycrystalline silicon thin film transistor
#250Germanium substrate-type materials and approach therefor
#251Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
#252Growing smooth semiconductor layers
#253Method for producing nitrides
#254Method of fabricating n-type semiconductor diamond, and semiconductor diamond
#255Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device
#256Thin film transistor with gate electrode portion crossing grain growing direction and liquid crystal display comprising the same
#257Method for producing nitride semiconductor, semiconductor wafer and semiconductor device
#258Semiconductor light emitting device
#259Method of making group III nitride-based compound semiconductor
#260Nano-imprinting using high-pressure crystal phase transformations
#261Nanosheet FET with wrap-around inner spacer
#262Method of fabricating epitaxial layer
#263Horizontal gate all around device isolation
#264Silicon-on-insulator substrates having selectively formed strained and relaxed device regions
#265Self aligned replacement fin formation
#266Method for surface roughness reduction after silicon germanium thin film deposition
#267Three dimensional memory device having stacked conductive channels
#268Nanowires, nanowire networks and methods for their formation and use