207101 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof; Forming layers; Forming inorganic semiconducting materials on a substrate; Formation types; Deposition types Homoepitaxy
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#2SiC LAYER TRANSFER VIA REMOTE EPITAXY
#3SEMICONDUCTOR DEVICES WITH SUPERLATTICE LAYERS IN SOURCE/DRAIN REGIONS AND MANUFACTURING METHODS THEREOF
#4NANOSTRUCTURE TRANSISTORS AND METHODS OF FORMING THE SAME
#5SEMICONDUCTOR DEVICES WITH SUPERLATTICE LAYERS IN SOURCE/DRAIN REGIONS AND MANUFACTURING METHODS THEREOF
#6CONTACT PLUGS FOR SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
#7NANOSTRUCTURE TRANSISTORS AND METHODS OF FORMING THE SAME
#8SEMICONDUCTOR SUBSTRATE
#9SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
#10HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING AN ISOLATION REGION
#11GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND MANUFACTURING METHOD THEREFOR
#12Methods of Semiconductor Device Fabrication Involving Porous Silicon Carbide
#13SILICON WAFER AND EPITAXIAL SILICON WAFER
#14Silicon Carbide Epitaxy
#15SiC EPITAXIAL WAFER AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER
#16METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY
#17SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#18SEMICONDUCTOR SUBSTRATE
#19METHOD FOR SIC STEP FLOW GROWTH BY REGULATING GROWTH MONMOERS USING CHEMICAL POTENTIAL UNDER NON-EQUILIBRIUM CONDITION
#20SUPER JUNCTION TRENCH MOSFET AND METHOD FOR PREPARING SAME
#21Method for manufacturing a grid
#22CONTACT PLUGS FOR SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
#23TRANSISTOR WITH CURRENT TERMINAL REGIONS AND CHANNEL REGION IN LAYER OVER DIELECTRIC
#24GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE
#25FABRICATING APPARATUS OF SIC EPITAXIAL WAFER AND FABRICATION METHOD OF THE SIC EPITAXIAL WAFER
#26Methods of forming semiconductor devices in a layer of epitaxial silicon carbide
#27METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS
#28SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
#29VAPOR PHASE GROWTH SYSTEM AND METHOD OF PRODUCING EPITAXIAL WAFER
#30GALLIUM NITRIDE EPITAXIAL STRUCTURES FOR POWER DEVICES
#31SEMICONDUCTOR DEVICE HAVING A SUPER JUNCTION STRUCTURE AND METHOD OF MANUFACTURING THE SAME
#32SYSTEMS AND METHODS FOR PROCESSING A SILICON SURFACE USING MULTIPLE RADICAL SPECIES
#33High resistivity silicon-on-insulator substrate comprising an isolation region
#34Method of manufacturing a beta-GaO-based single crystal film by flowing a Ga chloride gas, an oxygen gas, and a dopant gas
#35SILICON WAFER AND EPITAXIAL SILICON WAFER
#36SILICON CARBIDE SEMICONDUCTOR DEVICE
#37METHOD OF FORMING CONDUCTIVE MEMBER AND METHOD OF FORMING CHANNEL
#38SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#39Susceptor, epitaxial growth apparatus, method of producing epitaxial silicon wafer, and epitaxial silicon wafer
#40FILM FORMATION APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#41LIFT PIN, WAFER PROCESSING APPARATUS COMPRISING SAME, AND METHOD FOR PRODUCING WAFERS
#42Semiconductor structure and method for manufacturing semiconductor structure
#43Methods for determining suitability of silicon substrates for epitaxy
#44ANISOTROPIC EPITAXIAL GROWTH
#45METHOD FOR GROWING EPITAXIAL LAYER ON WAFER
#46SiC epitaxial wafer, production method therefor, and defect identification method
#47Method for manufacturing a grid
#48SiC epitaxial wafer and method for producing SiC epitaxial wafer
#49Methods for depositing III-alloys on substrates and compositions therefrom
#50METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
#51Method of manufacturing silicon carbide epitaxial wafer
#52Semiconductor device having a super junction structure and method of manufacturing the same
#53Method for growing beta-GaO-based single crystal film, and crystalline layered structure
#54Method for manufacturing buried gate and method for manufacturing semiconductor device
#55Small pitch super junction MOSFET structure and method
#56METHOD OF MANUFACTURING A SEMICONDUCTOR COMPONENT, AND WORKPIECE
#57Methods of re-using a silicon carbide substrate
#58VAPOR PHASE GROWTH APPARATUS
#59Semiconductor wafer including silicon carbide wafer and method for manufacturing silicon carbide semiconductor device
#60Method of Manufacturing Semiconductor Device, Non-transitory Computer-readable Recording Medium and Substrate Processing Apparatus
#61Method for manufacturing substrate, method for manufacturing semiconductor device, substrate, and semiconductor device
#62Low-leakage regrown GaN p-n junctions for GaN power devices
#63Contact plugs for semiconductor device
#64Epitaxially coated semiconductor wafer of monocrystalline silicon and method for production thereof
#65Gallium nitride epitaxial structures for power devices
#66Method of preparing an isolation region in a high resistivity silicon-on-insulator substrate
#67Method of preparing an isolation region in a high resistivity silicon-on-insulator substrate
#68SILICON CARBIDE EPITAXIAL GROWTH DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER
#69METHOD OF MEASURING FILM THICKNESS, METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LAMINATE AND NITRIDE SEMICONDUCTOR LAMINATE
#70METHOD FOR MANUFACTURING SiC EPITAXIAL WAFER
#71METAL TERMINAL EDGE FOR SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
#72Virtual wafer techniques for fabricating semiconductor devices
#73Group III nitride single crystal substrate
#74METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR
#75Method for passivating silicon carbide epitaxial layer
#76High power gallium nitride electronics using miscut substrates
#77Epitaxial wafer including boron and germanium and method of fabricating the same
#78Method for manufacturing a grid
#79Smoothed doped layer for solar cell
#80SiC epitaxial wafer and method for manufacturing same
#81Method for fabricating a monocrystalline structure
#82Susceptor, epitaxial growth apparatus, method of producing epitaxial silicon wafer, and epitaxial silicon wafer
#83Sample stage/holder for improved thermal and gas flow control at elevated growth temperatures
#84Method of manufacturing SiC epitaxial wafer
#85SiC composite substrate and method for manufacturing same
#86Semiconductor device having a super junction structure and method of manufacturing the same
#87Semiconductor device
#88Method for producing nitride crystal and nitride crystal
#89Semiconductor device and manufacturing method of the same
#90FinFETs having epitaxial capping layer on fin and methods for forming the same
#91SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatus
#92Silicon carbide semiconductor device
#93Method of manufacturing a semiconductor device
#94Gallium nitride epitaxial structures for power devices
#95High power gallium nitride electronics using miscut substrates
#96Method of manufacturing semiconductor device
#97Semiconductor device and method of manufacturing the same
#98Silicon carbide semiconductor device
#99Semiconductor device
#100Semiconductor device
#101System and method for widening fin widths for small pitch FinFET devices
#102Small pitch super junction MOSFET structure and method
#103Semiconductor device and method of manufacturing the same
#104Semiconductor device, method of manufacturing same, and sensor
#105High voltage silicon carbide Schottky diode flip chip array
#106Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator
#107Forming semiconductor devices in silicon carbide
#108Integrated circuit device including asymmetrical fin field-effect transistor
#109GaN laminate and method of manufacturing the same
#110Method for manufacturing nitrogen-face polarity gallium nitride epitaxial structure
#111METHOD AND APPARATUS FOR FORMING SILICON FILM, GERMANIUM FILM, OR SILICON GERMANIUM FILM
#112Silicon carbide semiconductor element and method for manufacturing same
#113SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#114Silicon carbide semiconductor device with horizontal and vertical current flow
#115Method of preparing an isolation region in a high resistivity silicon-on-insulator substrate
#116SiGe FINS FORMED ON A SUBSTRATE
#117SiGe FINS FORMED ON A SUBSTRATE
#118Fully depleted SOI device for reducing parasitic back gate capacitance
#119Method for evaluating surface defects of substrate to be bonded
#120Method for producing a SiC epitaxial wafer containing a total density of large pit defects and triangular defects of 0.01 defects/cm2 or more and 0.6 defects/cm2 or less
#121Method of manufacturing semiconductor device
#122Method of forming contact plugs for semiconductor device
#123Method of manufacturing silicon carbide semiconductor device
#124SIC EPITAXIAL WAFER
#125Method of manufacturing a semiconductor device
#126Wafer support, chemical vapor phase growth device, epitaxial wafer and manufacturing method thereof
#127Semiconductor device and method for manufacturing the same
#128Semiconductor device and method for forming n-type conductive channel in diamond using heterojunction
#129Semiconductor device
#130Method for manufacturing electronic component for heterojunction provided with buried barrier layer
#131Semiconductor device
#132SILICON CARBIDE SEMICONDUCTOR DEVICE
#133Silicon carbide semiconductor substrate, method of manufacturing a silicon carbide semiconductor device, and silicon carbide semiconductor device
#134Semiconductor device and method for manufacturing the same
#135Integrated circuit device including asymmetrical fin field-effect transistor
#136Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator
#137SHORT CHANNEL TRENCH POWER MOSFET
#138SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#139Silicon carbide semiconductor device and method for manufacturing same
#140Gallium nitride based semiconductor device and manufacturing method of gallium nitride based semiconductor device
#141Method for producing SiC epitaxial wafer including forming epitaxial layer under different conditions
#142TRENCH TYPE JUNCTION BARRIER SCHOTTKY DIODE WITH VOLTAGE REDUCING LAYER AND MANUFACTURING METHOD THEREOF
#143Ga2O3 SEMICONDUCTOR ELEMENT
#144Method for manufacturing SiC composite substrate, and method for manufacturing semiconductor substrate
#145Thin film and substrate-removed group III-nitride based devices and method
#146Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, semiconductor device and method of manufacturing semiconductor device
#147Method of forming semiconductor device
#148Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
#149Method for producing a semiconductor wafer with epitaxial layer in a deposition chamber, apparatus for producing a semiconductor wafer with epitaxial layer, and semiconductor wafer with epitaxial layer
#150Fabrication and use of large-grain templates for epitaxial deposition of semiconductor materials
#151Semiconductor device and method for manufacturing the same
#152System and method for widening fin widths for small pitch FinFET devices
#153Epitaxial growth method for silicon carbide
#154Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals
#155High voltage withstand Ga2O3-based single crystal schottky barrier diode
#156SiC composite substrate and method for manufacturing same
#157Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device
#158SILICON CARBIDE EPITAXIAL SUBSTRATE
#159Method of manufacturing semiconductor devices by using epitaxy and semiconductor devices with a lateral structure
#160Foundation substrate for producing diamond film and method for producing diamond substrate using same
#161Silicon carbide single crystal, silicon carbide single crystal wafer, silicon carbide single crystal epitaxial wafer, and electronic device
#162Susceptor for holding a semiconductor wafer having an orientation notch, a method for depositing a layer on a semiconductor wafer, and semiconductor wafer
#163Gallium nitride epitaxial structures for power devices
#164Fully depleted SOI device for reducing parasitic back gate capacitance
#165Power metal-oxide-semiconductor field-effect transistor device with three-dimensional super junction and fabrication method thereof
#166Underlying substrate including a seed crystal layer of a group 13 nitride having stripe-shaped projections and recesses and an off-angle in a direction of an a-axis
#167Semiconductor device and method of manufacturing semiconductor device
#168Method and system for in-situ etch and regrowth in gallium nitride based devices
#169Electronic device using group III nitride semiconductor and its fabrication method
#170Electronic device using group III nitride semiconductor and its fabrication method
#171Electronic device using group III nitride semiconductor and its fabrication method
#172Electronic device using group III nitride semiconductor and its fabrication method
#173Homoepitaxial tunnel barriers with hydrogenated graphene-on-graphene for room temperature electronic device applications
#174High resistivity silicon-on-insulator substrate comprising an isolation region
#175Method of preparing diamond substrates for CVD nanometric delta doping
#176High power gallium nitride electronics using miscut substrates
#177Semiconductor device and method of manufacturing semiconductor device
#178Semiconductor device having an ohmic electrode including a nickel silicide layer
#179Silicon carbide semiconductor device and manufacturing method for silicon carbide semiconductor device
#180Process for forming homoepitaxial tunnel barriers with hydrogenated graphene-on-graphene for room temperature electronic device applications
#181Schottky diode and method for its manufacturing
#182HEMTs with an AlxGa1-xN barrier layer grown by plasma enhanced atomic layer deposition
#183Method for manufacturing silicon carbide epitaxial substrate, silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor device
#184Silicon carbide semiconductor device
#185Integrated method for wafer outgassing reduction
#186CVD reactor and method for nanometric delta doping of diamond
#187Semiconductor device
#188Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals
#189Method for manufacturing group-III nitride semiconductor crystal substrate
#190Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
#191System and method for widening Fin widths for small pitch FinFET devices
#192High resistivity silicon-on-insulator substrate comprising an isolation region
#193Wafer support, chemical vapor phase growth device, epitaxial wafer and manufacturing method thereof
#194Apparatus and method for FinFETs
#195Formation of a layer on a semiconductor substrate
#196Method for producing a self-aligning masking layer
#197SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
#198Method of forming silicon layer in manufacturing semiconductor device and recording medium
#199Semiconductor manufacturing method and SiC substrate
#200Method for manufacturing nitride crystal substrate and substrate for crystal growth
#201METHOD OF PRODUCING SILICON CARBIDE EPITAXIAL SUBSTRATE, SILICON CARBIDE EPITAXIAL SUBSTRATE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE
#202Method of manufacturing a semiconductor device
#203Method and apparatus for producing large, single-crystals of aluminum nitride
#204SiGe fins formed on a substrate
#205Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer
#206Semiconductor device and method of manufacturing semiconductor device
#207HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
#208Susceptor for holding a semiconductor wafer having an orientation notch, a method for depositing a layer on a semiconductor wafer, and semiconductor wafer
#209Semiconductor device including dual-layer source/drain region
#210SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
#211Method of making embedded memory device with silicon-on-insulator substrate
#212METHOD FOR FORMING EPITAXIAL LAYER
#213Method of modifying epitaxial growth shape on source drain area of transistor
#214FinFETs having epitaxial capping layer on fin and methods for forming the same
#215Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
#216FET with local isolation layers on S/D trench sidewalls
#217PRODUCTION METHOD OF EPITAXIAL SILICON WAFER, VAPOR DEPOSITION EQUIPMENT AND VALVE
#218Method for producing nitride crystal and nitride crystal
#219Semiconductor device and method of manufacturing semiconductor device
#220Semiconductor device and method of manufacturing semiconductor device
#221Semiconductor device and method of manufacturing semiconductor device
#222METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#223Ga2O3 SEMICONDUCTOR ELEMENT
#224Method for manufacturing resistive element, method for manufacturing pressure sensor element, pressure sensor element, pressure sensor, altimeter, electronic apparatus, and moving object
#225Producing a semiconductor device by epitaxial growth
#226METHOD FOR GROWING BETA-Ga2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTALLINE LAYERED STRUCTURE
#227Method for producing epitaxial silicon carbide wafer
#228METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE BASED DEVICES
#229Method of laser separation of the epitaxial film or the epitaxial film layer from the growth substrate of the epitaxial semiconductor structure (variations)
#230Group III nitride substrates and their fabrication method
#231Group III nitride substrates and their fabrication method
#232Method of manufacturing semiconductor device, substrate processing apparatus, gas supply system, and recording medium
#233Method to grow thin epitaxial films at low temperature
#234Method for fabricating an improved GAN-based semiconductor layer
#235P-FET WITH GRADED SILICON-GERMANIUM CHANNEL
#236Heterogeneous semiconductor material integration techniques
#237INTEGRATED OXIDE AND SI ETCH FOR 3D CELL CHANNEL MOBILITY IMPROVEMENTS
#238Method of modifying epitaxial growth shape on source drain area of transistor
#239Apparatus and method for FinFETs
#240Group III-V device with a selectively modified impurity concentration
#241P-FET with graded silicon-germanium channel
#242Plasma etching of diamond surfaces
#243Structure and method of forming silicide on fins
#244Heterogeneous semiconductor material integration techniques
#245Method for fabricating a field effect transistor with local isolations on raised source/drain trench sidewalls
#246Method for forming an epitactic silicon layer
#247Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals
#248EPITAXIAL SILICON CARBIDE MONOCRYSTALLINE SUBSTRATE AND METHOD OF PRODUCTION OF SAME
#249FinFET and method of fabrication
#250Method for fabricating semiconductor device with super junction structure
#251SILICON CARBIDE EPITAXIAL WAFER AND METHOD FOR FABRICATING THE SAME
#252Superjunction power device and manufacturing method
#253Trench insulated-gate bipolar transistor and manufacture method thereof
#254Group III-V device with a selectively modified impurity concentration
#255Group III-V device with a selectively reduced impurity concentration
#256NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR CRYSTAL GROWTH METHOD
#257VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD
#258METHODS OF USING INJECT INSERT LINER ASSEMBLIES IN CHEMICAL VAPOR DEPOSITION SYSTEMS
#259Apparatus and method for FinFETs
#260Transistor with stacked oxide semiconductor films
#261Epitaxial wafer manufacturing device and manufacturing method
#262SIC epitaxial wafer and method for manufacturing same
#263Semiconductor device and method for growing semiconductor crystal
#264Method and system for in-situ etch and regrowth in gallium nitride based devices
#265GAAS/INGAAS AXIAL HETEROSTRUCTURE FORMATION IN NANOPILLARS BY CATALYST-FREE SELECTIVE AREA MOCVD
#266Apparatus and method for FinFETs
#267Semiconductor device with super junction structure and method for fabricating the same
#268Semiconductor devices including substrate layers and overlying semiconductor layers having closely matching coefficients of thermal expansion, and related methods
#269Semiconductor formation by lateral diffusion liquid phase epitaxy
#270Method for producing nitride crystal and nitride crystal
#271Group III-V device structure having a selectively reduced impurity concentration
#272Silicon epitaxial wafer and method for manufacturing the same
#273SEMICONDUCTOR DEVICE HAVING A SUPER JUNCTION STRUCTURE AND METHOD OF MANUFACTURING THE SAME
#274Electronic field effect devices and methods for their manufacture
#275Epitaxial silicon carbide monocrystalline substrate and method of production of same
#276Epitaxial silicon wafer and fabrication method thereof
#277Method of fabricating a stacked oxide material for thin film transistor
#278Process for forming an interface between silicon carbide and silicon oxide with low density of states
#279Method for manufacturing monocrystalline thin film and monocrystalline thin film device manufactured thereby
#280Epitaxially Coated Semiconductor Wafer and Device and Method For Producing An Epitaxially Coated Semiconductor Wafer
#281Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefrom
#282Nitride semiconductor and nitride semiconductor crystal growth method
#283STACKED BODY OF ISOTOPE DIAMOND
#284DIAMOND ELECTRONIC DEVICES INCLUDING A SURFACE AND METHODS FOR THEIR MANUFACTURE
#285Electronic field effect devices
#286Plasma etching of diamond surfaces
#287DIAMOND ELECTRONIC DEVICES AND METHODS FOR THEIR MANUFACTURE
#288Process for Producing a Silicon Carbide Substrate for Microelectric Applications
#289Process for making a GaN substrate
#290High uniformity boron doped diamond material
#291Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device
#292Film producing method using atmospheric pressure hydrogen plasma, and method and apparatus for producing refined film
#293Method for Manufacturing Epitaxial Wafer and Epitaxial Wafer
#294Homoepitaxial growth of SiC on low off-axis SiC wafers
#295Semiconductor device with silicon carbide channel
#296Method of selectively forming atomically flat plane on diamond surface, diamond substrate produced by the method, and semiconductor device using the same
#297Method for manufacturing epitaxial wafer
#298Process for producing ZnO single crystal according to method of liquid phase growth
#299METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE
#300Process for producing monocrystal thin film and monocrystal thin film device