207129 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon Making n- or p-doped regions
Sub-classes:ATOMIC SCALE FABRICATION OF DIAMOND QUANTUM COMPUTERS
#2TRANSISTOR AND METHOD FOR MANUFACTURING SAME
#3METHOD OF MAKING CELL REGIONS OF INTEGRATED CIRCUITS
#4METHODS OF FORMING CARBONACEOUS MEMBRANE WITH FREE-STANDING FORM
#5Method of making cell regions of integrated circuits
#6Semiconductor structure and manufacturing method thereof
#7Cell regions of integrated circuits and methods of making same
#8Method for making a bipolar junction transistor having an integrated switchable short
#9Graphene-based TFT comprising nitrogen-doped graphene layer as active layer
#10SYSTEMS AND METHODS FOR UNIVERSAL DEGENERATE P-TYPE DOPING WITH MONOLAYER TUNGSTEN OXYSELENIDE (TOS)
#11Method for thermally processing a substrate and associated system
#12PERC solar cell capable of improving photoelectric conversion efficiency and preparation method thereof
#13Optoelectronic semiconductor chip based on a phosphide compound semiconductor material
#14Laminated body and semiconductor device
#15Implanted dopant activation for wide bandgap semiconductor electronics
#16Carbon nanotube transistor with carrier blocking using thin dielectric under contact
#17Semiconductor device and method for forming p-type conductive channel in diamond using abrupt heterojunction
#18Sensing apparatus
#19Method of preparing nitrogen-doped graphene
#20Semiconductor device and method for manufacturing semiconductor device
#21Functionalized graphene structure and method for manufacturing the same
#22Homoepitaxial tunnel barriers with hydrogenated graphene-on-graphene for room temperature electronic device applications
#23Process for forming homoepitaxial tunnel barriers with hydrogenated graphene-on-graphene for room temperature electronic device applications
#24Semiconductor rectifier and manufacturing method thereof
#25Apparatus and method for controlling doping
#26Thermal diffusion doping of diamond
#27Thin film transistor and array substrate thereof each having doped oxidized or doped graphene active region and oxidized graphene gate insulating layer and producing method thereof
#28Graphene transistor and ternary logic device using the same
#29Method for manufacturing transistor according to selective printing of dopant
#30Graphene nanoribbon electronic device and method of manufacturing thereof
#31Sulfur doping method for graphene
#32Chemical sensors based on plasmon resonance in graphene
#33Chemical sensors based on plasmon resonance in graphene
#34Chemical sensors based on plasmon resonance in graphene
#35Silicon carbide semiconductor device and method for manufacturing same
#36Thermal diffusion doping of diamond
#37Semiconductor device
#38Plasma etching of diamond surfaces
#39Semiconductor device containing graphene p-n junctions and method for producing same
#40Roll-to-roll doping method of graphene film, and doped graphene film
#41Semiconductor device and method of manufacturing the same
#42Photo resist (PR) profile control
#43Semiconductor device
#44METHOD FOR N-DOPING GRAPHENE
#45Roll-to-roll doping method of graphene film, and doped graphene film
#46Electronic field effect devices and methods for their manufacture
#47BORON-DOPED DIAMOND SEMICONDUCTOR
#48Method of fabricating heavily doped region in double-diffused source MOSFET (LDMOS) transistor
#49Systems and methods for co-doping wide band gap materials
#50Complementary doping methods and devices fabricated therefrom
#51Diamond semiconductor device and method of manufacturing the same
#52DIAMOND ELECTRONIC DEVICES INCLUDING A SURFACE AND METHODS FOR THEIR MANUFACTURE
#53Electronic field effect devices
#54Plasma etching of diamond surfaces
#55DIAMOND ELECTRONIC DEVICES AND METHODS FOR THEIR MANUFACTURE
#56High uniformity boron doped diamond material
#57Boron-doped diamond semiconductor
#58Heavily doped region in double-diffused source MOSFET (LDMOS) transistor and a method of fabricating the same
#59Method of fabricating n-type semiconductor diamond, and semiconductor diamond
#60Method for manufacturing a display device with low temperature diamond coatings
#61Boron-doped diamond semiconductor
#62Method for manufacturing a display device with low temperature diamond coatings
#63Method of producing an N-type diamond with high electrical conductivity
#64Method of fabricating n-type semiconductor diamond, and semiconductor diamond
#65Layered structures
#66Boron-doped nanocrystalline diamond
#67Nanosheet field-effect transistors including a two-dimensional semiconducting material