207165 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AB compounds with or without impurities, e.g. doping materials Intermixing or interdiffusion or disordering of III-V heterostructures, e.g. IILD
Method of forming lateral pn junctions in III-nitrides using p-type and n-type co-doping and selective p-type activation and deactivation
#2Fabrication of nanowire vertical gate devices
#3Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures
#4Light emitting device, light emitting device package, light unit, and method of manufacturing same
#5DIFFUSION TOLERANT III-V SEMICONDUCTOR HETEROSTRUCTURES AND DEVICES INCLUDING THE SAME
#6High electron mobility transistor with indium nitride layer
#7Wafer structure for electronic integrated circuit manufacturing
#8High electron mobility transistor with indium nitride layer
#9Multi-height multi-composition semiconductor fins
#10Transistors, semiconductor devices, and methods of manufacture thereof
#11Diffusion agent composition, method of forming impurity diffusion layer, and solar cell
#12Wafer structure for electronic integrated circuit manufacturing
#13Gallium-containing light-emitting semiconductor device and method of fabrication
#14Generating Multiple Bandgaps Using Multiple Epitaxial Layers
#15Multiple anneal induced disordering
#16METHOD OF SELECTIVE POST-GROWTH TUNING OF AN OPTICAL BANDGAP OF A SEMI-CONDUCTOR HETEROSTRUCTURE AND PRODUCTS PRODUCED THEREOF
#17Control of contact resistance in quantum well intermixed devices
#18Gallium-containing light-emitting semiconductor device and method of fabrication
#19Method for forming a modified semiconductor having a plurality of band gaps
#20Regrowth method for fabricating wide-bandgap transistors, and devices made thereby
#21Fabrication of nanowire vertical gate devices