207191 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AB compounds with or without impurities, e.g. doping materials; Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase Diffusion into or out of AB compounds
HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING
#2GALLIUM NITRIDE DRAIN STRUCTURES AND METHODS OF FORMING THE SAME
#3METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING SELF-ALIGNED P-TYPE AND N-TYPE DOPED REGIONS
#4GAN DEVICE WITH N2 PRE-TREATMENT AND METHOD OF PERFORMING N2 PRE-TREATMENT
#5HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING
#6Gallium nitride drain structures and methods of forming the same
#7SEMI-CONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
#8Semiconductor device, method for manufacturing the same, power circuit, and computer
#9Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors
#10Method for producing a semiconductor component comprising performing a plasma treatment, and semiconductor component
#11Method for manufacturing semiconductor device
#12Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors
#13Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication therefor
#14Multi-state device based on ion trapping
#15Nitride semiconductor device and method for manufacturing same
#16Semiconductor device, method for manufacturing the same, power circuit, and computer
#17Semiconductor device, semiconductor device manufacturing method, power supply circuit, and computer
#18Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication therefor
#19Multi-state device based on ion trapping
#20Manufacturing method of vertical GaN-based semiconductor device and vertical GaN-based semiconductor device
#21Surface treatment process performed on devices for TFT applications
#22Process of forming light-receiving device
#23PLASMA SHALLOW DOPING AND WET REMOVAL OF DEPTH CONTROL CAP
#24PLASMA SHALLOW DOPING AND WET REMOVAL OF DEPTH CONTROL CAP
#25Plasma shallow doping and wet removal of depth control cap
#26III-V extension by high temperature plasma doping
#27Semiconductor device and method for producing same
#28Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation
#29Liquid immersion doping
#30Surface treatment of semiconductor substrate using free radical state fluorine particles
#31Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation
#32IIIA-VA group semiconductor single crystal substrate and method for preparing same
#33Controlling GaAsP/SiGe interfaces
#34Optical signal amplification
#35Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface
#36Method and apparatus for diffusion into semiconductor materials
#37Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation
#38Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface
#39Method and system for diffusion and implantation in gallium nitride based devices
#40Photodetection
#41Surface and gas phase doping of III-V semiconductors
#42GROUP III-NITRIDE N-TYPE DOPING
#43Light emitting diode and manufacturing method thereof
#44Diffusion tube, dopant source for a diffusion process and diffusion method using the diffusion tube and the dopant source
#45Method of ultra-shallow junction formation using Si film alloyed with carbon
#46Zn ion implanting method of nitride semiconductor