207195 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AB compounds with or without impurities, e.g. doping materials; Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer Diffusion into or out of AB compounds
HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF
#2SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
#3MANUFACTURING METHOD FOR NITRIDE SEMICONDUCTOR DEVICE
#4METHOD OF FORMING SEMICONDUCTOR DEVICE
#5MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
#6MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
#7SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
#8METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
#9High-Temperature Material Processing In The Absence Of Hydrogen
#10METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING SELF-ALIGNED P-TYPE AND N-TYPE DOPED REGIONS
#11FIELD ASSISTED INTERFACIAL DIFFUSION DOPING THROUGH HETEROSTRUCTURE DESIGN
#12METHOD OF PRODUCING P-TYPE NITRIDE SEMICONDUCTOR
#13Manufacturing method of semiconductor device
#14NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
#15SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
#16ENHANCED GAN HEMT RADIO-FREQUENCY DEVICE AND MANUFACTURING METHOD THEREOF
#17Semiconductor Structure and Method for Manufacturing the Same
#18Selective Area Diffusion Doping of III-N Materials
#19SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREOF
#20SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#21SUPERJUNCTION DEVICES FORMED BY FIELD ASSISTED DIFFUSION OF DOPANTS
#22Semiconductor device, method of manufacturing the same and electronic device including the device
#23Semiconductor device and manufacturing method thereof
#24LAMINATE, METHOD FOR MANUFACTURING LAMINATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
#25METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR DEVICE
#26PREPARATION METHOD FOR SEMICONDUCTOR STRUCTURE
#27Method for producing a semiconductor component comprising performing a plasma treatment, and semiconductor component
#28Field assisted interfacial diffusion doping through heterostructure design
#29Method and system for diffusing magnesium in gallium nitride materials using sputtered magnesium sources
#30Method for thermally processing a substrate and associated system
#31Manufacturing method of an HEMT transistor of the normally off type with reduced resistance in the on state and HEMT transistor
#32Method for preparing ohmic contact electrode of gallium nitride-based device
#33Methods for forming fluorine doped high electron mobility transistor (HEMT) devices
#34Doped aluminum nitride crystals and methods of making them
#35Semiconductor device, method of manufacturing the same and electronic device including the device
#36Semiconductor devices with fluorinated region and methods for forming the same
#37Multi-state device based on ion trapping
#38Semiconductor device
#39Semiconductor device, method of manufacturing the same and electronic device including the same
#40Semiconductor device, method of manufacturing the same, and electronic device including the device
#41Gallidation assisted impurity doping
#42Implanted dopant activation for wide bandgap semiconductor electronics
#43IC unit and method of manufacturing the same, and electronic device including the same
#44Semiconductor device including stressed source/drain, method of manufacturing the same and electronic device including the same
#45Method of making N-type doped gallium oxide through the deposition of a tin layer on the gallium oxide
#46Manufacturing method of an HEMT transistor of the normally off type with reduced resistance in the on state and HEMT transistor
#47Compound semiconductor device and method with high concentration dopant layer in regrown compound semiconductor
#48Multi-state device based on ion trapping
#49High electron mobility transistor structure
#50Semiconductor device and method of manufacturing semiconductor device
#51Doped aluminum nitride crystals and methods of making them
#52Semiconductor device and manufacturing method thereof
#53Method of reducing a sheet resistance in an electronic device, and an electronic device
#54Gallium nitride based semiconductor device and manufacturing method of gallium nitride based semiconductor device
#55Semiconductor device, power supply circuit, and computer
#56Method for manufacturing semiconductor device and edge termination structure of semiconductor device
#57Semiconductor device and method for manufacturing semiconductor device
#58Low damage self-aligned amphoteric FINFET tip doping
#59Method for manufacturing substrate for semiconductor device
#60Vertical gate-all-around transistor with top and bottom source/drain epitaxy on a replacement nanowire, and method of manufacturing the same
#61Contact structure and extension formation for III-V nFET
#62Semiconductor device and method of manufacturing the same
#63IC unit and methond of manufacturing the same, and electronic device including the same
#64Semiconductor device, method of manufacturing the same and electronic device including the same
#65Semiconductor device, method of manufacturing the same and electronic device including the device
#66Contact structure and extension formation for III-V nFET
#67Method of forming a P-type ohmic contact in group-III nitride semiconductors
#68Method of manufacturing semiconductor device, and semiconductor device
#69III-nitride based semiconductor device with low vulnerability to dispersion and backgating effects
#70Single source/drain epitaxy for co-integrating nFET semiconductor fins and pFET semiconductor fins
#71Doping of a substrate via a dopant containing polymer film
#72Method of making a semiconductor device formed by thermal annealing
#73Method for differential heating of elongate nano-scaled structures
#74High electron mobility transistor structure
#75Forming a contact layer on a semiconductor body
#76Semiconductor device having metallic source and drain regions
#77Compound semiconductor device and manufacturing method thereof
#78Doped aluminum nitride crystals and methods of making them
#79Contact structure and extension formation for III-V nFET
#80Liquid immersion doping
#81Contact structure and extension formation for III-V nFET
#82Methods for preparing layered semiconductor structures
#83Contact structure and extension formation for III-V nFET
#84Selective dopant junction for a group III-V semiconductor device
#85High electron mobility transistor with indium nitride layer
#86Selective dopant junction for a group III-V semiconductor device
#87Defects annealing and impurities activation in semiconductors at thermodynamically non-stable conditions
#88Substrate for semiconductor device and method of manufacturing the same
#89Single source/drain epitaxy for co-integrating nFET semiconductor fins and pFET semiconductor fins
#90Silicon-based substrate having first and second portions
#91Single source/drain epitaxy for co-integrating nFET semiconductor fins and pFET semiconductor fins
#92Method for performing activation of dopants in a GaN-base semiconductor layer
#93III-V compound semiconductor device having dopant layer and method of making the same
#94Doping of a substrate via a dopant containing polymer film
#95Silicon substrates with compressive stress and methods for production of the same
#96Techniques for increased dopant activation in compound semiconductors
#97Multiple-threshold voltage devices and method of forming same
#98SULFUR AND SELENIUM PASSIVATION OF SEMICONDUCTORS
#99Method of making high electron mobility transistor structure
#100Compound semiconductor device and method of fabricating the same
#101Method and system for diffusion and implantation in gallium nitride based devices
#102Method for electrical activation of dopant species in a GaN film
#103Conformal Doping
#104Contact Layers
#105Compound semiconductor device and method of fabricating the same
#106III-V COMPOUND SEMICONDUCTOR DEVICE HAVING DOPANT LAYER AND METHOD OF MAKING THE SAME
#107Interface engineering to optimize metal-III-V contacts
#108High electron mobility transistor structure with improved breakdown voltage performance
#109Method and system for diffusion and implantation in gallium nitride based devices
#110Self-aligned III-V MOSFET diffusion regions and silicide-like alloy contact
#111SELF-ALIGNED III-V MOSFET DIFFUSION REGIONS AND SILICIDE-LIKE ALLOY CONTACT
#112Ammonium sulfide passivation of semiconductors
#113Photodiode array, method for manufacturing photodiode array, epitaxial wafer, and method for manufacturing epitaxial wafer
#114Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them
#115Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them
#116Photodiode array, method for manufacturing photodiode array, epitaxial wafer, and method for manufacturing epitaxial wafer
#117Selectively doped semi-conductors and methods of making the same
#118Doped aluminum nitride crystals and methods of making them
#119Methods of forming a compound semiconductor device including a diffusion region
#120Semiconductor and method for producing the same
#121Avalanche photodiode with edge breakdown suppression
#122Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them
#123Method for forming electrode for group III nitride based compound semiconductor and method for manufacturing p-type group III nitride based compound semiconductor
#124Wafer and method of producing a substrate by transfer of a layer that includes foreign species
#125Method for doping impurities
#126Method for producing p-type group III nitride semiconductor and method for producing electrode for p-type group III nitride semiconductor
#127Doped aluminum nitride crystals and methods of making them
#128Method for solid phase diffusion of zinc into an InP-based photodiode and an InP photodiode made with the method
#129Wafer and method of producing a substrate by transfer of a layer that includes foreign species
#130Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures
#131Method for manufacturing a semiconductor device, and method for manufacturing a wafer
#132Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them
#133Contact resistance reduction by III-V Ga deficient surface
#134Asymmetric III-V MOSFET on silicon substrate
#135P type III-nitride materials and formation thereof