207219 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AB compounds with or without impurities, e.g. doping materials; Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups -; Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
METHOD FOR MANUFACTURING ZEROTH INTERLAYER DIELECTRIC
#2SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#3HIGH DENSITY PLASMA CVD FOR DISPLAY ENCAPSULATION APPLICATION
#4Ruthenium film forming method and substrate processing system
#5SHOWER PLATE AND FILM DEPOSITION APPARATUS
#6FILM FORMATION METHOD AND FILM FORMATION APPARATUS
#7Atomic layer deposition of selected molecular clusters
#8Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
#9METHOD AND APPARATUS FOR FORMING A PATTERNED LAYER OF MATERIAL
#10Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-transitory Computer-readable Recording Medium
#11Aluminum alloy film, method of producing the same, and thin film transistor
#12Methods for conformal doping of three dimensional structures
#13Method and composition for selectively modifying base material surface
#14Atomic layer deposition of selected molecular clusters
#15Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
#16Ruthenium film forming method and substrate processing system
#17SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
#18PROCESSING APPARATUS
#19Pre-Clean for Contacts
#20Method of manufacturing ruthenium-containing thin film and ruthenium-containing thin film manufactured therefrom
#21Semiconductor device having source/drain with a protrusion
#22Metal gate structure
#23Pre-clean for contacts
#24Dual metal-insulator-semiconductor contact structure and formulation method
#25Method of forming titanium nitride films with (200) crystallographic texture
#26Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
#27Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
#28Method for forming epitaxial layer at low temperature
#29Power trench capacitor compatible with deep trench isolation process
#30Enhanced thin film deposition
#31Manufacturing method for forming a thin film between two terminals
#32Metal gate structure
#33Method and system for producing graphene on a copper substrate by modified chemical vapor deposition (AP-CVD)
#34Compound film of tungsten and germanium, and semiconductor device
#35Group 5 metal compound, method for preparing the same, precursor composition for depositing layer containing the same, and method for depositing layer using the same
#36Method and composition for selectively modifying base material surface
#37Semiconductor device and method for fabricating the same
#38Vanadium compound
#39Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts
#40Method of forming semiconductor device using titanium-containing layer and device formed
#41Semiconductor devices having equal thickness gate spacers
#42Wiring structure and method for producing wiring structure
#43Method of forming internal stress control film
#44HOT EXTRUDED MATERIAL FOR CYLINDRICAL SPUTTERING TARGET AND METHOD OF MANUFACTURING CYLINDRICAL SPUTTERING TARGET
#45CATHODE FOR PLASMA TREATMENT APPARATUS
#46Solid-state image sensing device, manufacturing method, and electronic apparatus
#47Substituted cyclopentadienyl cobalt complex and method for production thereof, and cobalt-containing thin film and method for production thereof
#48Selective deposition for simplified process flow of pillar formation
#49Sidewall spacer with controlled geometry
#50Atomic layer deposition of selected molecular clusters
#51Power trench capacitor compatible with deep trench isolation process
#52Semiconductor devices having equal thickness gate spacers
#53Processing device, sputtering device, and collimator
#54Anhydrous nickel chloride and method for producing the same
#55Metal gate structure
#56ALUMINUM SPUTTERING TARGET
#57Method of manufacturing semiconductor device
#58Method of manufacturing semiconductor device, substrate processing apparatus, recording medium, and supply system
#59Semiconductor device and method for fabricating the same
#60Methods for titanium silicide formation using TiClprecursor and silicon-containing precursor
#61Method of forming semiconductor device using titanium-containing layer and device formed
#62Enhanced thin film deposition
#63Method of manufacturing semiconductor device
#64Transistor structure
#65Heterogeneous polynuclear complex for use in the chemical deposition of composite metal or metal compound thin films
#66Raw material for chemical deposition composed of organoplatinum compound, and chemical deposition method using the raw material for chemical deposition
#67PROCESSING DEVICE AND COLLIMATOR
#68Organoplatinum compound for use in the chemical deposition of platinum compound thin films
#69Maskless method to reduce source-drain contact resistance in CMOS devices
#70Compound, thin film-forming material, and thin film manufacturing method
#71Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts
#72Method and apparatus for forming nitride film
#73Method for manufacturing three-dimensional semiconductor integrated circuit device
#74Surface area and Schottky barrier height engineering for contact trench epitaxy
#75Surface area and Schottky barrier height engineering for contact trench epitaxy
#76Environmentally green process and composition for cobalt wet etch
#77Composite gate dielectric layer applied to group III-V substrate and method for manufacturing the same
#78Copper alloy sputtering target and method for manufacturing same
#79Method for fine line manufacturing
#80Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts
#81Method of manufacturing semiconductor device
#82Raw material for chemical deposition including organoruthenium compound, and chemical deposition method using the raw material for chemical deposition
#83Tungsten sputtering target and method for producing same
#84FinFET low resistivity contact formation method
#85Field-effect transistor comprising germanium and manufacturing method thereof
#86Sputtering apparatus and processing apparatus
#87Method for making a dipole-based contact structure to reduce the metal-semiconductor contact resistance in MOSFETs
#88Alkoxide compound, raw material for forming thin film, method for manufacturing thin film, and alcohol compound
#89Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films
#90Copper compound, starting material for forming thin film, and method for manufacturing thin film
#91Metal-semiconductor contact structure with doped interlayer
#92Metal gate structure
#93Precursor Composition for Forming Zirconium-Containing Film and Method for Forming Zirconium-Containing Film Using Same
#94High-throughput deposition of a voltage-tunable dielectric material
#95Liquid crystal display panel, array substrate and manufacturing method for thin-film transistor
#96Implantation formed metal-insulator-semiconductor (MIS) contacts
#97Implantation formed metal-insulator-semiconductor (MIS) contacts
#98Cylindrical sputtering target material
#99Fabrication methods for multi-layer semiconductor structures
#100High precision capacitor dielectric
#101Semiconductor device and method for manufacturing the same
#102Contact wrap around structure
#103Floating gate NVM with low-moisture-content oxide cap layer
#104Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
#105Tunable Stressed Polycrystalline Silicon on Dielectrics in an Integrated Circuit
#106Substrate processing apparatus
#107Metal gate structure
#108METHODS FOR ETCHING DIELECTRIC MATERIALS IN THE FABRICATION OF INTEGRATED CIRCUITS
#109Lowering tungsten resistivity by replacing titanium nitride with titanium silicon nitride
#110Fabrication method of silicon carbide semiconductor apparatus
#111High precision capacitor dielectric
#112Atomic layer deposition of selected molecular clusters
#113Integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices
#114Method of manufacturing a semiconductor device
#115Metal gate structure
#116Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes
#117Tunable stressed polycrystalline silicon on dielectrics in an integrated circuit
#118Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regions
#119Tunable stressed polycrystalline silicon on dielectrics in an integrated circuit
#120Enhanced thin film deposition
#121Fabrication of self aligned base contacts for bipolar transistors