207223 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AB compounds with or without impurities, e.g. doping materials; Treatment of semiconductor bodies using processes or apparatus not provided for in groups - ; Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma of AB compounds
Plasma-based edge terminations for gallium nitride power devices
#2Low-leakage regrown GaN p-n junctions for GaN power devices
#3Semiconductor device and manufacturing method thereof
#4Manufacturing method of semiconductor device and semiconductor device
#5Semiconductor device including GaN-based compound semiconductor stacked layer and method for producing the same
#6Method for reducing Fermi-Level-Pinning in a non-silicon channel MOS device
#7Buried lateral index guided lasers and lasers with lateral current blocking layers