ClassID:

207230

H01L21/314 - CPC Classification

Classification description:

Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AB compounds with or without impurities, e.g. doping materials; Treatment of semiconductor bodies using processes or apparatus not provided for in groups  -  to form insulating layers thereon, e.g. for masking or by using photolithographic techniques ; After treatment of these layers; Selection of materials for these layers Inorganic layers

Recent Application in this class:
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2021-12-02

Methods of manufacturing an integrated circuit having stress tuning layer

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20190252328
2019-08-15

Methods of manufacturing an integrated circuit having stress tuning layer

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20190035678
2019-01-31

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2017-08-10

Methods of manufacturing an integrated circuit having stress tuning layer

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2016-06-23

Methods of manufacturing an integrated circuit having stress tuning layer

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2015-09-24

Selective dielectric spacer deposition for exposing sidewalls of a finFET

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2014-12-04

Methods for integration of pore stuffing material

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2014-10-23

Semiconductor device and manufacturing method thereof

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Methods of forming a sidewall spacer having a generally triangular shape and a semiconductor device having such a spacer

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2013-09-05

Materials and methods for stress reduction in semiconductor wafer passivation layers

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2013-06-06

Integrated circuit having stress tuning layer

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2012-07-05

Passivation of aluminum nitride substrates

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MULTILAYERED CAP BARRIER IN MICROELECTRONIC INTERCONNECT STRUCTURES

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2011-08-04

Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

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2011-06-30

INSULATING FILM MATERIAL, METHOD FOR FORMING FILM BY USING THE INSULATING FILM MATERIAL, AND INSULATING FILM

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Passivation of aluminum nitride substrates

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Semiconductor component with stress-absorbing semiconductor layer

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Passivation of aluminum nitride substrates

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Source material for preparing low dielectric constant material

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Composition for chemical vapor deposition film-formation and method for production of low dielectric constant film

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Functional film containing structure and method of manufacturing functional film

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Dielectric interface for group III-V semiconductor device

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Method for forming interlayer insulating film in semiconductor device

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Boron derived materials deposition method

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Fabrication method of semiconductor integrated circuit device

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Multilayered cap barrier in microelectronic interconnect structures

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ELECTRON BEAM MODIFICATION OF CVD DEPOSITED LOW DIELECTRIC CONSTANT MATERIALS

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20080017844
2008-01-24

Low-temperature-grown (LTG) insulated-gate PHEMT device and method

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Dielectric material having carborane derivatives

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2007-05-31

Dielectric interface for group III-V semiconductor device

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Method for forming an insulating film in a semiconductor device

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Method of depositing low k barrier layers

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Method of passivating compound semiconductor surfaces

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Method of fabricating a multilayered dielectric diffusion barrier layer

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Methods for making dual-damascene dielectric structures

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Modulating nuclear receptor coactivator binding

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Method of depositing dielectric films

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Production method for semiconductor component with stress-carrying semiconductor layer

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Method for forming an interface between germanium and other materials

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2006-05-04

Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor device

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20060089007
2006-04-27

In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application

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20060071300
2006-04-06

Dielectric material having carborane derivatives

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20060035393
2006-02-16

Methods for the determination of film continuity and growth modes in thin dielectric films

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Semiconductor device and method for manufacturing same

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Silicon oxycarbide and silicon carbonitride based materials for MOS devices

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Manufacturing method for semiconductor device, and system to which semiconductor is applied

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Photo-assisted method for semiconductor fabrication

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Process for preparing low dielectric constant material

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Silicon carbide deposition for use as a low dielectric constant anti-reflective coating

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Interlayer adhesion promoter for low k materials

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Method of forming a semi-insulating region

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Method of forming a semi-insulating region

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Method of manufacturing semiconductor device

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Fabrication method of semiconductor integrated circuit device

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Semiconductor module having an insulation layer and method for fabricating a semiconductor module having an insulation layer

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Method of fabricating a contact

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Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers

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Method of forming a semi-insulating region

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Method of depositing dielectric films

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Selective dielectric spacer deposition for exposing sidewalls of a finFET