ClassID:

207237

H01L21/3242 - CPC Classification

Classification description:

Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AB compounds with or without impurities, e.g. doping materials; Treatment of semiconductor bodies using processes or apparatus not provided for in groups  - ; Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for the formation of PN junctions without addition of impurities

Recent Application in this class:
#1
20200119170
2020-04-16

Vertical fin type bipolar junction transistor (BJT) device with a self-aligned base contact

#2
20190393055
2019-12-26

HEAT TREATMENT SUSCEPTOR AND HEAT TREATMENT APPARATUS

#3
20190157104
2019-05-23

Laser anneal process

#4
20190027587
2019-01-24

Method for manufacturing thin film transistor

#5
20170316929
2017-11-02

Semiconductor device having a defined oxygen concentration

#6
20170221736
2017-08-03

HEAT TREATMENT SUSCEPTOR AND HEAT TREATMENT APPARATUS

#7
20170170018
2017-06-15

CONFORMAL DOPING USING DOPANT GAS ON HYDROGEN PLASMA TREATED SURFACE

#8
20160372329
2016-12-22

Methods for forming a semiconductor device and a semiconductor device

#9
20160351415
2016-12-01

SEMICONDUCTOR SUBSTRATE FOR FLASH LAMP ANNEAL, ANNEAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

#10
20160225626
2016-08-04

Method for producing a semiconductor

#11
20160218176
2016-07-28

Silicon carbide semiconductor device and method of manufacturing the same

#12
20160211336
2016-07-21

Semiconductor device with a semiconductor body containing hydrogen-related donors

#13
20160172438
2016-06-16

Method of manufacturing semiconductor devices using light ion implantation and semiconductor device

#14
20160104622
2016-04-14

Method for manufacturing a semiconductor wafer, and semiconductor device having a low concentration of interstitial oxygen

#15
20160020286
2016-01-21

TRANSISTOR AND MANUFACTURING METHOD THEREOF

#16
20150371858
2015-12-24

Method for treating a semiconductor wafer

#17
20150064890
2015-03-05

Method for producing a semiconductor

#18
20150054548
2015-02-26

Semiconductor device and method for manufacturing semiconductor device for adjusting threshold thereof

#19
20140151858
2014-06-05

Increasing the doping efficiency during proton irradiation

#20
20140054680
2014-02-27

METHOD OF FORMING GROUP III NITRIDE SEMICONDUCTOR, METHOD OF FABRICATING SEMICONDUCTOR DEVICE, GROUP III NITRIDE SEMICONDUCTOR DEVICE, METHOD OF PERFORMING THERMAL TREATMENT

#21
20130049176
2013-02-28

Method for producing a semiconductor

#22
20100210091
2010-08-19

Method for producing a semiconductor

#23
20100136774
2010-06-03

Method of fabricating a diode

#24
20100087053
2010-04-08

Method for fabricating a semiconductor having a graded pn junction

#25
20090298270
2009-12-03

METHOD FOR PRODUCING A SEMICONDUCTOR

#26
20090253225
2009-10-08

Method of processing a semiconductor substrate by thermal activation of light elements

#27
20080173968
2008-07-24

Diode

#28
20070007587
2007-01-11

Diode