207238 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AB compounds with or without impurities, e.g. doping materials; Treatment of semiconductor bodies using processes or apparatus not provided for in groups - ; Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AB compounds
Technique for GaN Epitaxy on Insulating Substrates
#2SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
#3CARRIER WAFER DEBONDING PROCESS AND METHOD
#4SEMICONDUCTOR OPTICAL DEVICE AND METHOD OF MANUFACTURING THE SAME
#5HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FORMING THE SAME
#6CARRIER WAFER DEBONDING PROCESS AND METHOD
#7IMPURITY REDUCTION TECHNIQUES IN GALLIUM NITRIDE REGROWTH
#8NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
#9METHOD AND SYSTEM OF JUNCTION TERMINATION EXTENSION IN HIGH VOLTAGE SEMICONDUCTOR DEVICES
#10METHOD AND APPARATUS FOR DRY-CLEANING AlN HEATER FOR SEMICONDUCTOR FABRICATION EQUIPMENT
#11SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD
#12METHOD FOR PREPARING SEMICONDUCTOR LAYER
#13SILICON CARBIDE DEVICE WITH SINGLE METALLIZATION PROCESS FOR OHMIC AND SCHOTTKY CONTACTS
#14METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#15MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT BY USING EXTREME ULTRA VIOLET
#16Silicidation Process for Semiconductor Devices
#17High electron mobility transistor and method for forming the same
#18GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the same
#19Semiconductor structure, HEMT structure and method of forming the same
#20SCHOTTKY DIODE AND MANUFACTURING METHOD THEREOF
#21Semiconductor device and method for manufacturing thereof
#22SEMICONDUCTOR DEVICE AND FABRICATION METHODS THEREOF
#23Methods of manufacturing high electron mobility transistors having a modified interface region
#24Selective capping processes and structures formed thereby
#25GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabricating Devices Incorporating the Same
#26Technique for GaN Epitaxy on Insulating Substrates
#27DEVICES AND METHODS INVOLVING ACTIVATION OF BURIED DOPANTS USING ION IMPLANTATION AND POST-IMPLANTATION ANNEALING
#28Vertical MOSFET having a high resistance region
#29Method of fabricating gallium nitride substrate using ion implantation
#30PREPARATION METHOD FOR SEMICONDUCTOR STRUCTURE
#31GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the same
#32GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabricating Devices Incorporating the Same
#33Method and system of junction termination extension in high voltage semiconductor devices
#34Supports for a semiconductor structure and associated wafers for an optoelectronic device
#35Method for dry etching compound materials
#36Semiconductor structure, HEMT structure and method of forming the same
#37Plasma-based edge terminations for gallium nitride power devices
#38SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING DEVICE
#39In-situ p-type activation of III-nitride films grown via metal organic chemical vapor deposition
#40Method for preparing a p-type semiconductor structure, enhancement mode device and method for manufacturing the same
#41Method of manufacturing semiconductor device and semiconductor device
#42Low-leakage regrown GaN p-n junctions for GaN power devices
#43Defect reduction of semiconductor layers and semiconductor devices by anneal and related methods
#44Electrode with alloy interface
#45Manufacturing method of an HEMT transistor of the normally off type with reduced resistance in the on state and HEMT transistor
#46Enhancement mode III-nitride devices having an Al-SiO gate insulator
#47Nitride semiconductor device
#48GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the same
#49Selective capping processes and structures formed thereby
#50Methods for forming fluorine doped high electron mobility transistor (HEMT) devices
#51Method for dry etching compound materials
#52Control of p-contact resistance in a semiconductor light emitting device
#53Structure of epitaxy on heterogeneous substrate and method for fabricating the same
#54Process of forming an electronic device including a transistor structure
#55Nitride semiconductor laminate, semiconductor device, method of manufacturing nitride semiconductor laminate, method of manufacturing nitride semiconductor free-standing substrate and method of manufacturing semiconductor device
#56Semiconductor devices with fluorinated region and methods for forming the same
#57Defect reduction of semiconductor layers and semiconductor devices by anneal and related methods
#58MANUFACTURING METHOD OF HIGH ELECTRON MOBILITY TRANSISTOR
#59Method for fabricating p-type gallium nitride semiconductor and method of heat treatment
#60Tunnel field-effect transistor
#61Method for manufacturing a donor substrate for making optoelectronic devices
#62Gallidation assisted impurity doping
#63Method of forming aluminum nitride film and method of manufacturing semiconductor light-emitting element
#64Semi-insulating compound semiconductor substrate and semi-insulating compound semiconductor single crystal
#65Method for preparing a p-type semiconductor layer, enhanced device and method for manufacturing the same
#66Method for manufacturing semiconductor device
#67SEED WAFER FOR GaN THICKENING USING GAS- OR LIQUID-PHASE EPITAXY
#68Semiconductor structure, HEMT structure and method of forming the same
#69Method for characterizing ohmic contact electrode performance of semiconductor device
#70Manufacturing method of an HEMT transistor of the normally off type with reduced resistance in the on state and HEMT transistor
#71Selective capping processes and structures formed thereby
#72Selective capping processes and structures formed thereby
#73Manufacturing method of vertical GaN-based semiconductor device and vertical GaN-based semiconductor device
#74SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#75Compound semiconductors having an improved high temperature resistant backside metallization
#76Process of forming an electronic device including a transistor structure
#77Apparatus and methods to create an active channel having indium rich side and bottom surfaces
#78Tunnel field-effect transistor and fabrication method thereof
#79METHOD OF MANUFACTURING A HYBRID SUBSTRATE
#80CONTROL OF P-CONTACT RESISTANCE IN A SEMICONDUCTOR LIGHT EMITTING DEVICE
#81Method for manufacturing semiconductor device
#82Method of manufacturing semiconductor device including implanting impurities into an implanted region of a semiconductor layer and annealing the implanted region
#83Method for manufacturing nitride semiconductor substrate
#84Low damage self-aligned amphoteric FINFET tip doping
#85Method and apparatus for forming device quality gallium nitride layers on silicon substrates
#86METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE
#87Manufacturing method for AlAs—Ge—AlAs structure based plasma p-i-n diode in multilayered holographic antenna
#88Contact structure and extension formation for III-V nFET
#89Nitride semiconductor template and nitride semiconductor device
#90Nitride semiconductor template and nitride semiconductor device
#91Direct bonding method
#92Semiconductor device
#93Manufacturing method of semiconductor device
#94GaAs thin film grown on Si substrate, and preparation method for GaAs thin film grown on Si substrate
#95Method for oxidizing a substrate surface using oxygen
#96Contact structure and extension formation for III-V nFET
#97VERTICAL MOSFET
#98Semiconductor structure, HEMT structure and method of forming the same
#99Seed wafer for GaN thickening using gas- or liquid-phase epitaxy
#100Manufacturing method of semiconductor device including a nitride semiconductor layer
#101Manufacturing method of semiconductor device
#102Semiconductor device, fabrication method for semiconductor device, power supply apparatus and high-frequency amplifier
#103Transition metal-bearing capping film for group III-nitride devices
#104SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#105Method of manufacturing semiconductor device, and semiconductor device
#106Method of manufacturing semiconductor device including an n type semiconductor region formed in a p type semiconductor layer
#107Method of manufacturing semiconductor device
#108Semiconductor device
#109Semiconductor device and manufacturing method of the semiconductor device
#110Semiconductor device
#111III-nitride based semiconductor device with low vulnerability to dispersion and backgating effects
#112Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations
#113Making nanochannels and nanotunnels
#114Semiconductor storage device
#115Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations
#116Method and apparatus for forming device quality gallium nitride layers on silicon substrates
#117Process of forming semiconductor device
#118SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME
#119Method of manufacturing nitride semiconductor device
#120Semiconductor device, method of manufacturing the same and power converter
#121SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF
#122Strained group IV channels
#123Method and apparatus for controlled dopant incorporation and activation in a chemical vapor deposition system
#124Control of P-contact resistance in a semiconductor light emitting device
#125Method of manufacturing semiconductor device and semiconductor device
#126Method of making a semiconductor device
#127SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#128Selective dopant junction for a group III-V semiconductor device
#129Low-stress low-hydrogen LPCVD silicon nitride
#130Gallium arsenide based materials used in thin film transistor applications
#131PROCESSES FOR USING FLUX AGENTS TO FORM POLYCRYSTALLINE GROUP III-GROUP V COMPOUNDS FROM SINGLE SOURCE ORGANOMETALLIC PRECURSORS
#132High electron mobility transistor with indium nitride layer
#133Semiconductor device, method for manufacturing the same and power converter
#134SEMICONDUCTOR DEVICE, FABRICATION METHOD FOR SEMICONDUCTOR DEVICE, POWER SUPPLY APPARATUS AND HIGH-FREQUENCY AMPLIFIER
#135Manufacturing method of semiconductor device and semiconductor device
#136Defects annealing and impurities activation in semiconductors at thermodynamically non-stable conditions
#137Semiconductor device and method of manufacturing semiconductor device
#138Semiconductor device and method of manufacturing semiconductor device
#139Semiconductor devices and FinFET devices
#140DEFECT REDUCTION IN III-V SEMICONDUCTOR EPITAXY THROUGH CAPPED HIGH TEMPERATURE ANNEALING
#141Method and apparatus for forming device quality gallium nitride layers on silicon substrates
#142Method to make buried, highly conductive p-type III-nitride layers
#143Semiconductor device having via hole coated in side surfaces with heat treated nitride metal and method to form the same
#144Recessed ohmic contacts in a III-N device
#145Group III nitride substrates and their fabrication method
#146Group III nitride substrates and their fabrication method
#147Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations
#148Method for fabricating CMOS compatible contact layers in semiconductor devices
#149Method for fabricating nitride semiconductor device with silicon layer
#150Method for forming an implanted area for a heterojunction transistor that is normally blocked
#151Method for doping a GaN-base semiconductor
#152Method for performing activation of dopants in a GaN-base semiconductor layer
#153Method for fabricating an improved GAN-based semiconductor layer
#154Method for performing activation of dopants in a GaN-base semiconductor layer by successive implantations and heat treatments
#155Low external resistance channels in III-V semiconductor devices
#156Methodology for annealing group III-nitride semiconductor device structures using novel weighted cover systems
#157CONTROLLABLE OXYGEN CONCENTRATION IN SEMICONDUCTOR SUBSTRATE
#158III-V compound semiconductor device having dopant layer and method of making the same
#159Method for oxidizing a substrate surface using oxygen
#160Method for producing a microelectronic device
#161Method for producing a semiconductor device, and semiconductor device
#162Techniques for increased dopant activation in compound semiconductors
#163Control of P-contact resistance in a semiconductor light emitting device
#164IIIA-VA group semiconductor single crystal substrate and method for preparing same
#165Methods of forming semiconductor devices and FinFET devices, and FinFET devices
#166STRESS MODULATION OF SEMICONDUCTOR THIN FILM
#167Self-Aligned III-V MOSFET Fabrication With In-Situ III-V Epitaxy And In-Situ Metal Epitaxy and Contact Formation
#168Method for processing gate dielectric layer deposited on germanium-based or group III-V compound-based substrate
#169METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#170Semiconductor device and manufacturing method of the same
#171SULFUR AND SELENIUM PASSIVATION OF SEMICONDUCTORS
#172ENABLING HIGH ACTIVATION OF DOPANTS IN INDIUM-ALUMINUM-GALIUM-NITRIDE MATERIAL SYSTEM USING HOT IMPLANTATION AND NANOSECOND ANNEALING
#173Method of manufacturing nitride semiconductor device, and burn-in apparatus
#174Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processing
#175Manufacturing method of semiconductor device including indium
#176Method and system for diffusion and implantation in gallium nitride based devices
#177Method for electrical activation of dopant species in a GaN film
#178Thermal surface treatment for reuse of wafers after epitaxial lift off
#179Process for smoothing a surface via heat treatment
#180Ion implantation at high temperature surface equilibrium conditions
#181METHOD OF FORMING GROUP III NITRIDE SEMICONDUCTOR, METHOD OF FABRICATING SEMICONDUCTOR DEVICE, GROUP III NITRIDE SEMICONDUCTOR DEVICE, METHOD OF PERFORMING THERMAL TREATMENT
#182III-V COMPOUND SEMICONDUCTOR DEVICE HAVING DOPANT LAYER AND METHOD OF MAKING THE SAME
#183Selective low-temperature ohmic contact formation method for group III-nitride heterojunction structured device
#184Group III-V substrate material with particular crystallographic features
#185Method and system for diffusion and implantation in gallium nitride based devices
#186ANNEALING METHOD TO REDUCE DEFECTS OF EPITAXIAL FILMS AND EPITAXIAL FILMS FORMED THEREWITH
#187Relaxation of strained layers
#188Self-aligned III-V MOSFET fabrication with in-situ III-V epitaxy and in-situ metal epitaxy and contact formation
#189METHOD FOR PRODUCING RECYCLED SUBSTRATE, RECYCLED SUBSTRATE, NITRIDE SEMICONDUCTOR ELEMENT, AND LAMP
#190GALLIUM ARSENIDE BASED MATERIALS USED IN THIN FILM TRANSISTOR APPLICATIONS
#191High efficiency thin film transistor device with gallium arsenide layer
#192Defects annealing and impurities activation in III-nitride compound
#193Method for fabricating semiconductor device
#194RELAXATION OF STRAINED LAYERS
#195Semiconductor Manufacturing Method
#196GaN SINGLE-CRYSTAL SUBSTRATE, NITRIDE TYPE SEMICONDUCTOR EPITAXIAL SUBSTRATE, NITRIDE TYPE SEMICONDUCTOR DEVICE, AND METHODS OF MAKING THE SAME
#197Method using multiple layer annealing cap for fabricating group III-nitride semiconductor device structures and devices formed thereby
#198MICROWAVE ACTIVATION ANNEALING PROCESS
#199Compound semiconductor substrate and control for electrical property thereof
#200Method for eliminating defects from semiconductor materials
#201Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer
#202Method for eliminating defects from semiconductor materials
#203GaAs semiconductor substrate and fabrication method thereof
#204Abrupt Metal-Insulator Transition Wafer, and Heat Treatment Apparatus and Method For the Wafer
#205METHOD TO FABRICATE III-N FIELD EFFECT TRANSISTORS USING ION IMPLANTATION WITH REDUCED DOPANT ACTIVATION AND DAMAGE RECOVERY TEMPERATURE
#206Method for enhancing lightness of p-type nitride group compound L.E.D.
#207Method of fabricating seminconductor devices including self aligned refractory contacts
#208Substrate processing method, semiconductor device and method for fabricating the semiconductor device
#209Method of manufacturing semiconductor optical device
#210Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer
#211Method of manufacturing semiconductor device
#212Method of improving surface flatness of group-III nitride crystal, substrate for epitaxial growth, and semiconductor device
#213III-V nitride semiconductor substrate and its production lot, and III-V nitride semiconductor device and its production method
#214Nitride semiconductor substrate and its production method
#215GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same
#216Method for surface treating a semiconductor
#217Semiconductor structure, HEMT structure and method of forming the same
#218Large-scale patterning of germanium quantum dots by stress transfer
#219Post growth defect reduction for heteroepitaxial materials
#220Large-scale patterning of germanium quantum dots by stress transfer
#221Fabrication methodology for optoelectronic integrated circuits