ClassID:

207242

H01L21/38 - CPC Classification

Classification description:

Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups, , , and with or without impurities, e.g. doping materials Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions

Sub-classes:
Recent Application in this class:
#1
20250329639
2025-10-23

INTEGRATED CIRCUIT WITH FRONTSIDE AND BACKSIDE CONDUCTIVE LAYERS AND EXPOSED BACKSIDE SUBSTRATE

#2
20240355924
2024-10-24

SEMICONDUCTOR DEVICE HAVING MOS TRANSISTOR FOR EFFICIENT STRESS TRANSFER

#3
20240274591
2024-08-15

SEMICONDUCTOR DEVICE WITH COMMUNICATION RING

#4
20240186241
2024-06-06

INTEGRATED CIRCUIT WITH FRONTSIDE AND BACKSIDE CONDUCTIVE LAYERS AND EXPOSED BACKSIDE SUBSTRATE

#5
20230065663
2023-03-02

Integrated circuit with frontside and backside conductive layers and exposed backside substrate

#6
20220238711
2022-07-28

SEMICONDUCTOR DEVICE HAVING MOS TRANSISTOR FOR EFFICIENT STRESS TRANSFER

#7
20200403104
2020-12-24

Semiconductor device and method for manufacturing semiconductor device

#8
20200313009
2020-10-01

Solar cell and solar cell module

#9
20200075714
2020-03-05

Self-forming spacers using oxidation

#10
20190378716
2019-12-12

Infrared optical sensor and manufacturing method thereof

#11
20190189464
2019-06-20

Methods and apparatus for gettering impurities in semiconductors

#12
20190181274
2019-06-13

Thin film transistor having supporting layer, method for manufacturing the same and display device comprising the same

#13
20190088787
2019-03-21

Low temperature polysilicon thin film transistor and fabricating method thereof and array substrate

#14
20180294334
2018-10-11

Self-forming spacers using oxidation

#15
20180151695
2018-05-31

Fin field effect transistor (finFET) device structure and method for forming the same

#16
20180083094
2018-03-22

Semiconductor device

#17
20170280566
2017-09-28

Wafer-level manufacturing method for embedding passive element in glass substrate

#18
20170263702
2017-09-14

Self-forming spacers using oxidation

#19
20170200889
2017-07-13

Method for manufacturing transistor according to selective printing of dopant

#20
20170133538
2017-05-11

Method of producing differently doped zones in a silicon substrate, in particular for a solar cell

#21
20160043072
2016-02-11

Systems and methods for integrating bootstrap circuit elements in power transistors and other devices

#22
20150108539
2015-04-23

FABRICATION METHOD OF SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE

#23
20140167069
2014-06-19

Systems and methods for integrating bootstrap circuit elements in power transistors and other devices

#24
20140042541
2014-02-13

Creating anisotropically diffused junctions in field effect transistor devices

#25
20120238081
2012-09-20

Printed Material Constrained By Well Structures And Devices Including Same

#26
20120235145
2012-09-20

Printed material constrained by well structures and devices including same

#27
20120119294
2012-05-17

Creating anisotropically diffused junctions in field effect transistor devices

#28
20110095342
2011-04-28

Printed material constrained by well structures

#29
20090065875
2009-03-12

Metal-oxide-semiconductor device with a doped titanate body

#30
20070048909
2007-03-01

Superjunction device with improved ruggedness

#31
20050082570
2005-04-21

Superjunction device with improved ruggedness

#32
16252932
2020-04-28

Localized tunneling enhancement for semiconductor devices

#33
12849782
2016-10-25

Method for forming a superjunction device with improved ruggedness