207453 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof; Manufacture of specific parts of devices defined in group; Making of buried regions, e.g. buried collector layers, internal connections for AIII-BV integrated circuits
SCREEN LAYER INTEGRATION IN GALLIUM NITRIDE TECHNOLOGY
#2Parasitic capacitance reduction in GaN-on-silicon devices
#3Gallium nitride device for high frequency and high power applications
#4Enhanced bonding between III-V material and oxide material
#5Parasitic capacitance reduction in GaN devices
#6Enhanced bonding between III-V material and oxide material
#7Parasitic capacitance reduction in GaN-on-silicon devices
#8Enhanced bonding between III-V material and oxide material
#9High electron mobility transistor with deep charge carrier gas contact structure
#10Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
#11High power compound semiconductor field effect transistor devices with low doped drain
#12Semiconductor structure with doped layers on fins and fabrication method thereof
#13Multilevel template assisted wafer bonding
#14Semiconductor component and method of manufacture
#15Multilevel template assisted wafer bonding
#16Semiconductor component and method of manufacture
#17Semiconductor component and method
#18Semiconductor structure, an integrated circuit including a semiconductor structure and a method for manufacturing a semiconductor structure
#19BURIED CONTACT DEVICES FOR NITRIDE-BASED FILMS AND MANUFACTURE THEREOF
#20Regrowth method for fabricating wide-bandgap transistors, and devices made thereby
#21Regrowth method for fabricating wide-bandgap transistors, and devices made thereby
#22Metal-semiconductor heterodimension field effect transistors (MESHFET) and high electron mobility transistor (HEMT) based device and method of making the same