ClassID:

207455

H01L21/7602 - CPC Classification

Classification description:

Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof; Manufacture of specific parts of devices defined in group; Making of isolation regions between components between components manufactured in an active substrate comprising SiC compounds

Recent Application in this class:
#1
20250374571
2025-12-04

SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF

#2
20250169127
2025-05-22

SILICON CARBIDE SEMICONDUCTOR DEVICE WITH OVERLAPPING ELECTRIC FIELD RELAXATION REGIONS AND METHOD OF MANUFACTURING THE SAME

#3
20250120147
2025-04-10

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

#4
20250081621
2025-03-06

SEMICONDUCTOR DEVICE HAVING AN ISOLATION STRUCTURE THAT DELIMITS A REGION OF AN EPITAXIAL LAYER OR LAYER STACK

#5
20230335560
2023-10-19

Isolation structure for separating different transistor regions on the same semiconductor die

#6
20230282693
2023-09-07

TRENCH CHANNEL SEMICONDUCTOR DEVICES AND RELATED METHODS

#7
20230274937
2023-08-31

Self aligned MOSFET devices and associated fabrication methods

#8
20230118405
2023-04-20

Semiconductor structure and method for forming same

#9
20230074093
2023-03-09

Semiconductor device and method of manufacturing semiconductor device

#10
20230013819
2023-01-19

Semiconductor device and method of manufacturing semiconductor device

#11
20220399438
2022-12-15

SEMICONDUCTOR DEVICE

#12
20220344453
2022-10-27

Self-aligned trench MOSFET

#13
20220320268
2022-10-06

Semiconductor device

#14
20220302251
2022-09-22

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

#15
20220285483
2022-09-08

INSULATED GATE SEMICONDUCTOR DEVICE

#16
20220246719
2022-08-04

Silicon carbide semiconductor device with overlapping electric field relaxation regions and method of manufacturing the same

#17
20220231120
2022-07-21

TRANSISTOR CELL INCLUDING AN IMPLANTED EXPANSION REGION

#18
20220216299
2022-07-07

Semiconductor device

#19
20220208961
2022-06-30

SILICON CARBIDE MOSFET TRANSISTOR DEVICE WITH IMPROVED CHARACTERISTICS AND CORRESPONDING MANUFACTURING PROCESS

#20
20220199824
2022-06-23

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

#21
20220199766
2022-06-23

SiC devices with shielding structure

#22
20220190104
2022-06-16

SiC MOSFET device and method for manufacturing the same

#23
20220130772
2022-04-28

Semiconductor device and semiconductor wafer

#24
20220085157
2022-03-17

Semiconductor device and method of manufacturing semiconductor device

#25
20220059657
2022-02-24

Silicon carbide semiconductor device and method for manufacturing the same

#26
20220052176
2022-02-17

SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF

#27
20220020846
2022-01-20

Method of manufacturing a semiconductor device utilzing two hard masks and two auxiliary masks to form PN junctions structure

#28
20220013438
2022-01-13

Power converter

#29
20200295140
2020-09-17

Gate insulating layer having a plurality of silicon oxide layer with varying thickness

#30
20200266094
2020-08-20

Electrical isolation structure and process

#31
20190229113
2019-07-25

Isolation enhancement with on-die slot-line on power/ground grid structure

#32
20170271324
2017-09-21

Semiconductor device and method of manufacturing semiconductor device

#33
20120241764
2012-09-27

Semiconductor device based on the cubic silicon carbide single crystal thin film

#34
20120184113
2012-07-19

METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

#35
20110198612
2011-08-18

SiC semiconductor device having CJFET and method for manufacturing the same

#36
20110198027
2011-08-18

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

#37
20100270561
2010-10-28

Method for manufacturing a cubic silicon carbide single crystal thin film and semiconductor device based on the cubic silicon carbide single crystal thin film

#38
20100117188
2010-05-13

METHOD FOR PRODUCING TRENCH ISOLATION IN SILICON CARBIDE AND GALLIUM NITRIDE AND ARTICLES MADE THEREBY

#39
20090246708
2009-10-01

Method of forming mask pattern

#40
20070254452
2007-11-01

Mask structure for manufacture of trench type semiconductor device

#41
20060160316
2006-07-20

Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications

#42
20060125057
2006-06-15

Method for the production of a composite sicoi-type substrate comprising an epitaxy stage

#43
20050282358
2005-12-22

Method for transferring an electrically active thin layer

#44
20050266659
2005-12-01

Methods for transferring a useful layer of silicon carbide to a receiving substrate

#45
20050136611
2005-06-23

Manufacturing device for buried insulating layer type single crystal silicon carbide substrate

#46
20050032330
2005-02-10

Methods for transferring a useful layer of silicon carbide to a receiving substrate

#47
20050020031
2005-01-27

Methods for preparing a semiconductor assembly