207462 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof; Manufacture of specific parts of devices defined in group; Making of isolation regions between components; Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
METHOD FOR OXIDISING A SILICON LAYER
#2SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
#3Bulk Nanosheet with Dielectric Isolation
#4UNIVERSAL ELECTRICALLY INACTIVE DEVICES FOR INTEGRATED CIRCUIT PACKAGES
#5Semiconductor structure with partially embedded insulation region and related method
#6Semiconductor structure with partially embedded insulation region
#7Bulk nanosheet with dielectric isolation
#8Method and apparatus with channel stop doped devices
#9Method of manufacturing a semiconductor device
#10Footing removal for nitride spacer
#11Bulk nanosheet with dielectric isolation
#12Bulk nanosheet with dielectric isolation
#13Semiconductor device with localized carrier lifetime reduction and fabrication method thereof
#14Active regions with compatible dielectric layers
#15Strained finFET device fabrication
#16Strained finFET device fabrication
#17Strained FinFET device fabrication
#18Strained finFET device fabrication
#19Methods of forming fin isolation regions on FinFET semiconductor devices by implantation of an oxidation-retarding material
#20Method for growing III-V epitaxial layers
#21Manufacturing method for semiconductor device with discrete field oxide structure
#22Multiple-time programming memory cells and methods for forming the same
#23Multiple-time programming memory cells and methods for forming the same
#24Method and apparatus with channel stop doped devices
#25Semiconductor device having buried layer and method for forming the same
#26Methods for reoxidizing an oxide and for fabricating semiconductor devices
#27Multiple-time programming memory cells and methods for forming the same
#28Localized carrier lifetime reduction
#29Semiconductor Device and Method of Manufacturing the Same
#30Local oxidation of silicon processes with reduced lateral oxidation
#31Method of Manufacturing Semiconductor Device
#32METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
#33Method of fabricating semiconductor device
#34Structures including an at least partially reoxidized oxide material
#35Semiconductor structures for latch-up suppression and methods of forming such semiconductor structures
#36Semiconductor structures for latch-up suppression and methods of forming such semiconductor structures
#37Semiconductor structures for latch-up suppression and methods of forming such semiconductor structures
#38Method for preparing a gate oxide layer
#39Ion-assisted oxidation methods and the resulting structures
#40Method for forming field oxide
#41Method of manufacturing semiconductor device
#42Methods for forming a device isolation structure in a semiconductor device
#43Threshold voltage and well implantation method for semiconductor devices