207476 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof; Manufacture of specific parts of devices defined in group; Making of isolation regions between components; Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques
MICROELECTRONIC DEVICE SUBSTRATE FORMED BY ADDITIVE PROCESS
#2Method of manufacturing semiconductor device
#3Epitaxial silicon within horizontal access devices in vertical three dimensional (3D) memory
#4Super junction power device and method of making the same
#5Method for Forming a Semiconductor Structure Having a Porous Semiconductor Layer in RF Devices
#6Semiconductor structure having porous semiconductor layer for RF devices
#7Semiconductor device
#8Microelectronic device substrate formed by additive process
#9Fin structure and method for manufacturing the same
#10Tunable hardmask for overlayer metrology contrast
#11SOI substrate
#12Tunable hardmask for overlayer metrology contrast
#13Process to form SOI substrate
#14Manufacturing method of semiconductor device
#15Forming zig-zag trench structure to prevent aspect ratio trapping defect escape
#16Non-volatile memory device and method of manufacturing the same
#17Non-volatile memory device and method of manufacturing the same