207545 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof; Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using technologies not covered by one of groups, , , and
RESISTOR GEOMETRY
#2VERTICAL JUNCTION FIELD-EFFECT TRANSISTORS WITH SOURCE-DRAIN DIODE CELLS INTEGRATED AT DIE LEVEL
#3Devices Having a Semiconductor Material That Is Semimetal in Bulk and Methods of Forming the Same
#4CMOS FABRICATION METHODS FOR BACK-GATE TRANSISTOR
#5SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF MANUFACTURING THE SAME
#6FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL
#73D NANOSHEET STACK WITH DUAL SELECTIVE CHANNEL REMOVAL OF HIGH MOBILITY CHANNELS
#82D-MATERIAL GATE-ALL-AROUND COMPLEMENTARY FET INTEGRATION
#9CMOS Fabrication Methods for Back-Gate Transistor
#10Semiconductor device having channel structure with 2D material
#113D selective material transformation to integrate 2D material elements
#12THIN FILM TRANSISTORS HAVING A SPIN-ON 2D CHANNEL MATERIAL
#13Field-Effect Transistors Having Transition Metal Dichalcogenide Channels and Methods of Manufacture
#14ELECTRONIC CIRCUITS AND CIRCUIT ELEMENTS
#15Resistor geometry
#16Devices having a semiconductor material that is semimetal in bulk and methods of forming the same
#17CMOS Fabrication Methods for Back-Gate Transistor
#18Transistors with monocrystalline metal chalcogenide channel materials
#19Devices having a semiconductor material that is semimetal in bulk and methods of forming the same
#20Devices having a semiconductor material that is semimetal in bulk and methods of forming the same
#21Field-effect transistors having transition metal dichalcogenide channels and methods of manufacture
#22Stacked thin film transistors
#23TFT structure based on flexible multi-layer graphene quantum carbon substrate material and method for manufacturing same
#24MIM capacitor and method of forming the same
#252-D material transistor with vertical structure
#26Method for making three dimensional complementary metal oxide semiconductor carbon nanotube thin film transistor circuit
#27Field-effect transistors having transition metal dichalcogenide channels and methods of manufacture
#28Dual channel FinFETs having uniform fin heights
#29Dual channel FinFETs having uniform fin heights
#30Devices having a semiconductor material that is semimetal in bulk and methods of forming the same
#312-D material transistor with vertical structure
#32Contact structure and extension formation for III-V nFET
#33Techniques for forming transistors on the same die with varied channel materials
#34Complementary thin film transistor and manufacturing method thereof
#35Contact structure and extension formation for III-V nFET
#36Decoupling capacitor on strain relaxation buffer layer
#37MIM capacitor and method of forming the same
#38Devices having a semiconductor material that is semimetal in bulk and methods of forming the same
#39Stacked strained and strain-relaxed hexagonal nanowires
#40Devices having transition metal dichalcogenide layers with different thicknesses and methods of manufacture
#41Contact structure and extension formation for III-V nFET
#42Contact structure and extension formation for III-V nFET
#43Semiconductor devices and methods of manufacturing the same
#44Transition metal dichalcogenide semiconductor assemblies
#45Contact structure and extension formation for III-V nFET
#46Field-effect transistors having transition metal dichalcogenide channels and methods of manufacture
#47Method, apparatus and system for advanced channel CMOS integration
#48Germanium FinFETs with metal gates and stressors
#49III-V FinFET CMOS with III-V and germanium-containing channel closely spaced
#50Two-dimensional large-area growth method for chalcogen compound, method for manufacturing CMOS-type structure, film of chalcogen compound, electronic device comprising film of chalcogen compound, and CMOS-type structure
#51Graphene based three-dimensional integrated circuit device
#52Semiconductor device and manufacturing method thereof
#53Graphene based three-dimensional integrated circuit device
#54Germanium FinFETs with metal gates and stressors
#55Method of forming semiconductor device
#56Tall strained high percentage silicon germanium fins for CMOS
#57Field effect transistor including strained germanium fins