207947 ⎘
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
Semiconductor Device
#2SEMICONDUCTOR DEVICE
#3INVERTER
#4Semiconductor device
#5GROUP III-NITRIDE SEMICONDUCTOR ARRAY WITH HETEROGENEOUS ELECTRODES FOR RADIO FREQUENCY PROCESSING
#6Inverter
#7Semiconductor device
#8Semiconductor device
#9NCFETS with complimentary capacitance matching using stacked n-type and p-type nanosheets
#10Non-planar silicided semiconductor electrical fuse
#11MICROELECTRONIC DEVICE AND METHOD FOR MAKING THE SAME
#12Semiconductor device
#13Device having bipolar junction transistors and finFET transistors on the same substrate
#14Semiconductor device
#15Semiconductor device
#16Heavily doped buried layer to reduce MOSFET off capacitance
#17Analysis system, analysis method, and program storage medium
#18Semiconductor device
#19Semiconductor device
#20Conductivity modulated drain extended MOSFET
#21Metal-insulator-poly capacitor in a high-K metal gate process and method of manufacturing
#22Gated diode memory cells
#23Power semiconductor device
#24Isolation structure for semiconductor device having self-biasing buried layer and method therefor
#25Semiconductor module
#26Gated diode memory cells
#27Semiconductor device
#28Semiconductor device having a sense diode portion
#29Semiconductor device
#30Forming horizontal bipolar junction transistor compatible with nanosheets
#31Conductivity modulated drain extended MOSFET
#32Semiconductor device
#33Semiconductor device
#34Inverter
#35Electric assembly including a reverse conducting switching device and a rectifying device
#36BIPOLAR JUNCTION TRANSISTOR DEVICE HAVING BASE EPITAXY REGION ON ETCHED OPENING IN DARC LAYER
#37Electronic apparatus with pocket of low permittivity material to reduce electromagnetic interference
#38SEMICONDUCTOR DEVICE
#39INTEGRATED CIRCUIT INCLUDING A DIODE AND TRANSISTORS IN A CASCODE CONFIGURATION
#40Semiconductor device and transistor
#41Electrostatic discharge (ESD) protection device
#42Semiconductor device and method of forming shielding layer over integrated passive device using conductive channels
#43Integrated electrostatic discharge (ESD) clamping for an LDMOS transistor device having a bipolar transistor
#44Systems and methods for integrating bootstrap circuit elements in power transistors and other devices
#45Bipolar junction transistor device having base epitaxy region on etched opening in DARC layer
#46Integrated device having MOSFET cell array embedded with barrier Schottky diode
#47Systems and methods for integrating bootstrap circuit elements in power transistors and other devices
#48Unit power module and power module package comprising the same
#49ESD clamp with auto biasing under high injection conditions
#50ESD clamp with auto biasing under high injection conditions
#51DRAM memory cell having a vertical bipolar injector
#52Memory cell with a channel buried beneath a dielectric layer
#53Semiconductor device and method of forming shielding layer over integrated passive device using conductive channels
#54Forming horizontal bipolar junction transistor compatible with nanosheets
#55Conductivity modulated drain extended MOSFET