207949 ⎘
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
Sub-classes:Electronic device
#2Electronic device
#3Method for manufacturing an electronic device and electronic device
#4PASSIVE DEVICE AND MANUFACTURING METHOD THEREOF
#5Semiconductor device having inductor
#6High speed IGBT
#7Single-chip common-drain JFET device and its applications
#8Inverse mode SiGe HBT cascode device and fabrication method
#9Single-chip common-drain JFET device and its applications
#10Single-chip common-drain JFET device and its applications
#11Single-chip common-drain JFET device and its applications
#12Single-chip common-drain JFET device and its applications
#13Semiconductor device having two bipolar transistors constituting electrostatic protective element
#14AMPLIFIER CIRCUIT
#15Device having inductors and capacitors
#16Redundant interconnect high current bipolar device and method of forming the device
#17Method in the fabrication of an integrated injection logic circuit
#18Lateral bipolar junction transistor in CMOS flow
#19Method for integration of three bipolar transistors in a semiconductor body, multilayer component, and semiconductor arrangement
#20Single-chip common-drain JFET device and its applications
#21Redundant interconnect high current bipolar device and method of forming the device
#22MOS field effect transistor with reduced parasitic substrate conduction