ClassID:

207960

H01L27/0821 - CPC Classification

Classification description:

Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only Combination of lateral and vertical transistors only

Recent Application in this class:
#1
20210343582
2021-11-04

METHODS OF MANUFACTURING A TRANSISTOR DEVICE

#2
20200381513
2020-12-03

Semiconductor chip integrating high and low voltage devices

#3
20200321239
2020-10-08

Semiconductor device and manufacturing method thereof

#4
20190088740
2019-03-21

Semiconductor chip integrating high and low voltage devices

#5
20170170053
2017-06-15

Semiconductor device and manufacturing method thereof

#6
20160329094
2016-11-10

Methods of reading six-transistor cross-coupled thyristor-based SRAM memory cells

#7
20160148940
2016-05-26

Cross-coupled thyristor SRAM semiconductor structures and methods of fabrication

#8
20160099310
2016-04-07

Semiconductor device integrating high and low voltage devices

#9
20160093623
2016-03-31

Two-transistor SRAM semiconductor structure and methods of fabrication

#10
20160093622
2016-03-31

Cross-coupled thyristor SRAM semiconductor structures and methods of fabrication

#11
20160093369
2016-03-31

Write assist thyristor-based SRAM circuits and methods of operation

#12
20150008562
2015-01-08

PNP bipolar junction transistor fabrication using selective epitaxy

#13
20130119516
2013-05-16

PNP bipolar junction transistor fabrication using selective epitaxy

#14
20130072004
2013-03-21

Method of integrating high voltage devices

#15
20130071994
2013-03-21

METHOD OF INTEGRATING HIGH VOLTAGE DEVICES

#16
20120289018
2012-11-15

SOI SiGe-base lateral bipolar junction transistor

#17
20120139009
2012-06-07

SOI SiGe-base lateral bipolar junction transistor

#18
20100219504
2010-09-02

Four-terminal gate-controlled LVBJTs

#19
20100213575
2010-08-26

Profile design for lateral-vertical bipolar junction transistor

#20
20080293214
2008-11-27

Method of fabricating trench-constrained isolation diffusion for semiconductor devices

#21
20080290452
2008-11-27

Trench-constrained isolation diffusion for integrated circuit die

#22
20070173026
2007-07-26

Method for fabricating bipolar integrated circuits

#23
20060105517
2006-05-18

Method in the fabrication of an integrated injection logic circuit

#24
20050272230
2005-12-08

Method of fabricating trench-constrained isolation diffusion for semiconductor devices

#25
20050272207
2005-12-08

Trench-constrained isolation diffusion for integrated circuit die

#26
20050269597
2005-12-08

Complementary analog bipolar transistors with trench-constrained isolation diffusion

#27
20050151525
2005-07-14

Semiconductor circuit for DC-DC converter

#28
20050087771
2005-04-28

Semiconductor integrated circuit device

#29
20050082632
2005-04-21

Semiconductor integrated circuit device

#30
20050077571
2005-04-14

Semiconductor integrated circuit device