ClassID:

207962

H01L27/0825 - CPC Classification

Classification description:

Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Recent Application in this class:
#1
20230123050
2023-04-20

Darlington pair bipolar junction transistor sensor

#2
20220122969
2022-04-21

Bipolar transistor and manufacturing method

#3
20220085190
2022-03-17

Semiconductor device and integrated circuit

#4
20210391445
2021-12-16

Semiconductor device including sense insulated-gate bipolar transistor

#5
20210343582
2021-11-04

METHODS OF MANUFACTURING A TRANSISTOR DEVICE

#6
20200185906
2020-06-11

Semiconductor device with surge current protection

#7
20200075585
2020-03-05

Integrating silicon-BJT to a silicon-germanium-HBT manufacturing process

#8
20200044047
2020-02-06

Semiconductor device including sense insulated-gate bipolar transistor

#9
20190341477
2019-11-07

Semiconductor device with multiple HBTs having different emitter ballast resistances

#10
20190288648
2019-09-19

Amplifier using parallel high-speed and low-speed transistors

#11
20190074366
2019-03-07

Semiconductor device with multiple HBTS having different emitter ballast resistances

#12
20180277642
2018-09-27

Semiconductor device with transistor cells and enhancement cells with delayed control signals

#13
20180190801
2018-07-05

Semiconductor device with multiple HBTs having different emitter ballast resistances

#14
20180145160
2018-05-24

Heterojunction bipolar transistor device integration schemes on a same wafer

#15
20180138290
2018-05-17

Semiconductor device including sense insulated-gate bipolar transistor

#16
20180053848
2018-02-22

Fabrication of vertical fin transistor with multiple threshold voltages

#17
20180053847
2018-02-22

Fabrication of vertical fin transistor with multiple threshold voltages

#18
20180040612
2018-02-08

Semiconductor device having a sense IGBT for current detection of a main IGBT

#19
20170288056
2017-10-05

Fabrication of vertical fin transistor with multiple threshold voltages

#20
20170149425
2017-05-25

Switching circuit

#21
20170084727
2017-03-23

Semiconductor device and semiconductor device manufacturing method

#22
20160211660
2016-07-21

Semiconductor device with surge current protection

#23
20160190123
2016-06-30

Semiconductor device with transistor cells and enhancement cells with delayed control signals

#24
20160079237
2016-03-17

Fabricating method for high voltage semiconductor power switching device

#25
20150372181
2015-12-24

Active photonic device having a Darlington configuration

#26
20150325558
2015-11-12

Semiconductor device including sense insulated-gate bipolar transistor

#27
20150270256
2015-09-24

Segmented NPN vertical bipolar transistor

#28
20150214413
2015-07-30

Phototransistor and semiconductor device

#29
20150084533
2015-03-26

Igniter, igniter control method, and internal combustion engine ignition apparatus

#30
20130249057
2013-09-26

SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product

#31
20130071994
2013-03-21

METHOD OF INTEGRATING HIGH VOLTAGE DEVICES

#32
20130032891
2013-02-07

Method of manufacturing an IC comprising a plurality of bipolar transistors and IC comprising a plurality of bipolar transistors

#33
20110012129
2011-01-20

High-gain wide bandgap darlington transistors and related methods of fabrication

#34
20100109118
2010-05-06

SEMICONDUCTOR DEVICE

#35
20090206449
2009-08-20

Stress-modified device structures, methods of fabricating such stress-modified device structures, and design structures for an integrated circuit

#36
20090085066
2009-04-02

Method for integrating high voltage and high speed bipolar transistors on a substrate and related structure

#37
20090014838
2009-01-15

Semiconductor device having particular impurity density characteristics

#38
20080315856
2008-12-25

BANDGAP REFERENCE VOLTAGE GENERATOR CIRCUIT

#39
20080227261
2008-09-18

Method for fabricating a transistor structure

#40
20080217729
2008-09-11

Isolation structures for integrated circuit devices

#41
20080217699
2008-09-11

Isolated bipolar transistor

#42
20080213972
2008-09-04

Processes for forming isolation structures for integrated circuit devices

#43
20080210980
2008-09-04

Isolated CMOS transistors

#44
20070275534
2007-11-29

Varied impurity profile region formation for varying breakdown voltage of devices

#45
20070207585
2007-09-06

Semiconductor device having a first bipolar device and a second bipolar device and method for fabrication

#46
20060270203
2006-11-30

Varied impurity profile region formation for varying breakdown voltage of devices

#47
20060261876
2006-11-23

Optically triggered wide bandgap bipolar power switching devices and circuits

#48
20060199348
2006-09-07

Method for the integration of two bipolar transistors in a semiconductor body, semiconductor arrangement in a semiconductor body, and cascode circuit

#49
20060157825
2006-07-20

Semiconductor device and manufacturing the same

#50
20060145299
2006-07-06

Method for improving the electrical properties of active bipolar components

#51
20060105535
2006-05-18

Integrated circuit and method for manufacturing an integrated circuit on a semiconductor chip

#52
20060105532
2006-05-18

Integrated circuit and method for manufacturing an integrated circuit on a chip

#53
20060009002
2006-01-12

Method for producing a transistor structure

#54
20050156193
2005-07-21

Method for manufacturing an integrated circuit and integrated circuit with a bipolar transistor and a hetero bipolar transistor