207963 ⎘
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only Combination of vertical complementary transistors
COMPLEMENTARY BIPOLAR JUNCTION TRANSISTOR
#2Vertical bipolar junction transistor and vertical field effect transistor with shared floating region
#3Device comprising a PNP bipolar transistor and NPN bipolar transistor for radiofrequency applications
#4Complementary bipolar junction transistor
#5SEMICONDUCTOR DEVICE
#6Method for fabricating a device comprising a PNP bipolar transistor and NPN bipolar transistor for radiofrequency applications
#7Complementary transistor structures formed with the assistance of doped-glass layers
#8Bipolar junction transistor, and a method of forming a charge control structure for a bipolar junction transistor
#9Bipolar junction transistor, and a method of forming an emitter for a bipolar junction transistor
#10Half-bridge circuit including integrated level shifter transistor
#11METHOD FOR FABRICATING A JFET TRANSISTOR WITHIN AN INTEGRATED CIRCUIT AND CORRESPONDING INTEGRATED CIRCUIT
#12Vertical bipolar transistors
#13PNP-type bipolar transistor manufacturing method
#14Embedded memory with enhanced channel stop implants
#15Fabrication of integrated circuit structures for bipolar transistors
#16Vertical p-type, n-type, p-type (PNP) junction integrated circuit (IC) structure
#17Fabrication of integrated circuit structures for bipolor transistors
#18Method for creating the high voltage complementary BJT with lateral collector on bulk substrate with resurf effect
#19Embedded memory with enhanced channel stop implants
#20Bipolar junction transistors with extrinsic device regions free of trench isolation
#21Bipolar junction semiconductor device and method for manufacturing thereof
#22Method for fabricating a JFET transistor within an integrated circuit and corresponding integrated circuit
#23Audio processing device
#24Methods of reading six-transistor cross-coupled thyristor-based SRAM memory cells
#25Method for creating the high voltage complementary BJT with lateral collector on bulk substrate with resurf effect
#26Vertical P-type, N-type, P-type (PNP) junction integrated circuit (IC) structure
#27Cross-coupled thyristor SRAM semiconductor structures and methods of fabrication
#28Two-transistor SRAM semiconductor structure and methods of fabrication
#29Cross-coupled thyristor SRAM semiconductor structures and methods of fabrication
#30Write assist thyristor-based SRAM circuits and methods of operation
#31Method to build vertical PNP in a BiCMOS technology with improved speed
#32Integrated semiconductor device having a level shifter
#33Half-bridge circuit including a low-side transistor and a level shifter transistor integrated in a common semiconductor body
#34Methods for producing bipolar transistors with improved stability
#35Integrated semiconductor device and a bridge circuit with the integrated semiconductor device
#36SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product
#37Semiconductor arrangement with a superjunction transistor and a further device integrated in a common semiconductor body
#38SiGe heterojunction bipolar transistor with a shallow out-diffused P+ emitter region
#39VERTICAL PNP DEVICE IN A SILICON-GERMANIUM BICMOS PROCESS AND MANUFACTURING METHOD THEREOF
#40Method of manufacturing an IC comprising a plurality of bipolar transistors and IC comprising a plurality of bipolar transistors
#41Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length
#42Bipolar transistor with improved stability
#43Forming bipolar transistor through fast EPI-growth on polysilicon
#44Method of fabricating semiconductor device
#45Isolated drain-centric lateral MOSFET
#46Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length
#47Asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions
#48Method of fabricating hetero-junction bipolar transistor (HBT)
#49Complementary bipolar semiconductor device
#50Integrated circuit arrangement with NPN and PNP bipolar transistors and corresponding production method
#51Stress-modified device structures, methods of fabricating such stress-modified device structures, and design structures for an integrated circuit
#52Bipolar complementary semiconductor device
#53Method for integrating SiGe NPN and vertical PNP devices
#54Hetero-junction bipolar transistor (HBT) and structure thereof
#55Self-aligned vertical PNP transistor for high performance SiGe CBiCMOS process
#56Method for fabricating isolated integrated semiconductor structures
#57Method of fabricating trench-constrained isolation diffusion for semiconductor devices
#58Trench-constrained isolation diffusion for integrated circuit die
#59Isolated bipolar transistor
#60Isolated rectifier diode
#61Isolated lateral MOSFET in epi-less substrate
#62Isolated junction field-effect transistor
#63Isolation structures for integrated circuit devices
#64Isolated bipolar transistor
#65Processes for forming isolation structures for integrated circuit devices
#66Isolated CMOS transistors
#67Vertical-type, integrated bipolar device and manufacturing process thereof
#68Self-aligned vertical PNP transistor for high performance SiGe CBiCMOS process
#69Semiconductor device and method of manufacturing the same
#70Vertical PNP transistor and method of making same
#71High performance integrated vertical transistors and method of making the same
#72High performance integrated vertical transistors and method of making the same
#73Integrated circuit arrangement with NPN and PNP bipolar transistors and corresponding production method
#74Method of fabricating trench-constrained isolation diffusion for semiconductor devices
#75Trench-constrained isolation diffusion for integrated circuit die
#76Complementary analog bipolar transistors with trench-constrained isolation diffusion
#77Reduce 1/f noise in NPN transistors without degrading the properties of PNP transistors in integrated circuit technologies
#78Semiconductor integrated circuit device
#79Integrated circuit arrangement having PNP and NPN bipolar transistors, and fabrication method
#80Semiconductor integrated circuit
#81Method of forming a semiconductor component having multiple bipolar transistors with different characteristics
#82Bipolar transistor device