207964 ⎘
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only Combination of direct and inverse vertical transistors
Half-bridge circuit including integrated level shifter transistor
#2Fabrication of vertical fin transistor with multiple threshold voltages
#3Fabrication of vertical fin transistor with multiple threshold voltages
#4Fabrication of vertical fin transistor with multiple threshold voltages
#5Half-bridge circuit including a low-side transistor and a level shifter transistor integrated in a common semiconductor body
#6Semiconductor arrangement with a superjunction transistor and a further device integrated in a common semiconductor body
#7Integrated circuit and method for manufacturing an integrated circuit on a semiconductor chip
#8Cascode, cascode circuit and method for vertical integration of two bipolar transistors into a cascode arrangement