207979 ⎘
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including bipolar transistors Static bipolar memory cell structures
Interconnect landing method for RRAM technology
#2Semiconductor memory device
#3Interconnect landing method for RRAM technology
#4Interconnect landing method for RRAM technology
#5Interconnect landing method for RRAM technology
#6Complementary bipolar SRAM
#7Two-transistor SRAM semiconductor structure and methods of fabrication
#8Complementary bipolar SRAM
#9Cross-coupled thyristor SRAM semiconductor structures and methods of fabrication
#10Two-transistor SRAM semiconductor structure and methods of fabrication
#11Cross-coupled thyristor SRAM semiconductor structures and methods of fabrication
#12Semiconductor device, method for manufacturing same, and nonvolatile semiconductor memory device
#13Semiconductor device, method for manufacturing same, and nonvolatile semiconductor memory device
#14Four-transistor and five-transistor BJT-CMOS asymmetric SRAM cells
#15One-transistor static random access memory with integrated vertical PNPN device
#16SOI lateral bipolar for integrated-injection logic SRAM