ClassID:

207980

H01L27/1026 - CPC Classification

Classification description:

Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including bipolar transistors Bipolar electrically programmable memory structures

Recent Application in this class:
#1
20210036598
2021-02-04

Transistor device

#2
20210013263
2021-01-14

Memory device and method of manufacturing the same

#3
20200227481
2020-07-16

Memory device and method of manufacturing the same

#4
20190296016
2019-09-26

Gated bipolar junction transistors, memory arrays, and methods of forming gated bipolar junction transistors

#5
20190252384
2019-08-15

Gated diode memory cells

#6
20190189692
2019-06-20

Memory device and method of manufacturing the same

#7
20190165263
2019-05-30

Methods of forming a memory structure

#8
20190074071
2019-03-07

Memory system

#9
20190013316
2019-01-10

Gated diode memory cells

#10
20180190718
2018-07-05

Memory device and method of manufacturing the same

#11
20180061756
2018-03-01

One time programmable memory cell and memory array

#12
20170271346
2017-09-21

Anti-fuse nonvolatile memory devices employing lateral bipolar junction transistors as selection transistors

#13
20170243923
2017-08-24

Memory device and method of manufacturing the same

#14
20160071882
2016-03-10

Semiconductor device, method for manufacturing same, and nonvolatile semiconductor memory device

#15
20160049366
2016-02-18

Integrated circuits with electronic fuse structures

#16
20150155283
2015-06-04

Gated bipolar junction transistors, memory arrays, and methods of forming gated bipolar junction transistors

#17
20140273390
2014-09-18

Bipolar junction transistors, memory arrays, and methods of forming bipolar junction transistors and memory arrays

#18
20140154857
2014-06-05

Memory device and method for making same

#19
20130341729
2013-12-26

Semiconductor device, method for manufacturing same, and nonvolatile semiconductor memory device

#20
20130234102
2013-09-12

Bipolar junction transistors and memory arrays

#21
20130217193
2013-08-22

Method for fabricating semiconductor device

#22
20130015508
2013-01-17

Semiconductor device and method for fabricating the same

#23
20120223369
2012-09-06

Gated bipolar junction transistors

#24
20120214262
2012-08-23

Embedded Semiconductor Device Including Phase Changeable Random Access Memory Element and Method of Fabricating the Same

#25
20120018845
2012-01-26

Polysilicon plug bipolar transistor for phase change memory

#26
20110228592
2011-09-22

Programmable bipolar electronic device

#27
20110186919
2011-08-04

Integrated circuit with trimming

#28
20100181649
2010-07-22

Polysilicon pillar bipolar transistor with self-aligned memory element

#29
20100176362
2010-07-15

Polysilicon plug bipolar transistor for phase change memory

#30
20100008122
2010-01-14

Memory device and method for making same

#31
20080117677
2008-05-22

Vertical nonvolatile memory cell, array, and operation

#32
20080111188
2008-05-15

INTEGRATED CIRCUIT STRUCTURE AND METHOD OF MANUFACTURING A MEMORY CELL

#33
20070257326
2007-11-08

INTEGRATED CIRCUIT STRUCTURE AND METHOD OF MANUFACTURING A MEMORY CELL

#34
17172539
2022-05-03

Electronic fuse (e-fuse) cells integrated with bipolar device

#35
14642909
2016-06-28

Fabrication of a deep trench memory cell