ClassID:

208045

H01L27/1461 - page 5 - CPC Classification

Classification description:

Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Devices controlled by radiation; Imager structures; Structural or functional details thereof; Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area

Recent Application in this class:
#1201
20090146153
2009-06-11

Pixel with strained silicon layer for improving carrier mobility and blue response in imagers

#1202
20090140304
2009-06-04

Solid-state imaging device and camera

#1203
20090140124
2009-06-04

Imaging device camera system and driving method of the same

#1204
20090108207
2009-04-30

CMOS sensor adapted for dental x-ray imaging

#1205
20090096049
2009-04-16

Solid state imaging device capable of supressing generation of dark current

#1206
20090065832
2009-03-12

Solid-state imaging device

#1207
20080296645
2008-12-04

Solid-state imaging device and manufacturing method thereof

#1208
20080231738
2008-09-25

IMAGE SENSOR, SINGLE-PLATE COLOR IMAGE SENSOR, AND ELECTRONIC DEVICE

#1209
20080197387
2008-08-21

Solid-state imaging device and camera

#1210
20080128598
2008-06-05

Imaging device camera system and driving method of the same

#1211
20070262364
2007-11-15

Method of making wafer structure for backside illuminated color image sensor

#1212
20070131978
2007-06-14

Solid-state imaging device and method for manufacturing the same

#1213
20070057298
2007-03-15

Pixel with strained silicon layer for improving carrier mobility and blue response in imagers

#1214
20060203111
2006-09-14

3T pixel for CMOS image sensors with low reset noise and low dark current generation utilizing parametric reset

#1215
20050035375
2005-02-17

Solid-state imaging device and method for manufacturing the same

#1216
20050006565
2005-01-13

Pixel with strained silicon layer for improving carrier mobility and blue response in imagers

#1217
17834402
2022-12-13

Photodetector module comprising emitter and receiver

#1218
17378367
2023-01-31

Systems and methods for callable options values determination using deep machine learning

#1219
16543681
2020-09-29

Image sensor for infrared sensing and fabrication method thereof

#1220
15972380
2019-05-07

Floating diffusion of image sensor with low leakage current

#1221
15910883
2019-06-25

Pixel array with embedded split pixels for high dynamic range imaging

#1222
15849634
2018-11-20

Backside illumination global shutter sensor and pixel thereof

#1223
15809040
2018-08-21

Multispectral imaging device

#1224
15791191
2018-05-08

Image sensor with inverted source follower

#1225
15680005
2018-09-18

Raised electrode to reduce dark current

#1226
15642177
2018-06-05

CMOS image sensor having enhanced near infrared quantum efficiency

#1227
15427748
2018-01-30

Image sensor with inverted source follower

#1228
15384872
2018-05-01

Blooming free high dynamic range image sensor read out architecture using in-frame multi-bit exposure control

#1229
15362391
2018-01-02

Storage gate protection

#1230
15293149
2017-10-24

Isolation structure in photodiode

#1231
15242326
2018-01-16

Methods and apparatus for an image sensor with a multi-branch transistor

#1232
15226787
2022-04-12

High quantum efficiency superlattice infrared detector

#1233
14523377
2016-03-22

Image sensor with pixel units having interleaved photodiodes