208130 ⎘
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including bulk negative resistance effect components Gunn effect devices
Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same
#2Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same
#3Scalable, stackable, and BEOL-process compatible integrated neuron circuit
#4Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same
#5Multi-negative differential resistance device and method of manufacturing the same
#6Scalable, stackable, and BEOL-process compatible integrated neuron circuit
#7Rectifier for electromagnetic radiation