208196 ⎘
Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor; Capacitors with a dielectric comprising a perovskite structure material comprising a barrier layer to prevent diffusion of hydrogen or oxygen
FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM
#2DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
#3CONCURRENT COMPENSATION IN A MEMORY SYSTEM
#4DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
#5SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
#6Capacitor and method for fabricating the same
#7BOTTOM-ELECTRODE INTERFACE STRUCTURE FOR MEMORY
#8Method of fabricating a perovskite-material based planar capacitor using rapid thermal annealing (RTA) methodologies
#9Method of fabricating a perovskite-material based trench capacitor using rapid thermal annealing (RTA) methodologies
#10Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitors
#11Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based memory devices
#12Manganese-doped perovskite layers and semiconductor device incorporating same
#13B-site doped perovskite layers and semiconductor device incorporating same
#14B-site doped perovskite layers and semiconductor device incorporating same
#15Dual hydrogen barrier layer for memory devices
#16SEMICONDUCTOR DEVICE INCLUDING CHARGE TRAP SITE AND METHOD OF FABRICATING THE SAME
#17Doped polar layers and semiconductor device incorporating same
#18Doped polar layers and semiconductor device incorporating same
#19Doped polar layers and semiconductor device incorporating same
#20Doped polar layers and semiconductor device incorporating same
#21Doped polar layers and semiconductor device incorporating same
#22Doped polar layers and semiconductor device incorporating same
#23Doped polar layers and semiconductor device incorporating same
#24Multi-layer electrode to improve performance of ferroelectric memory device
#25Bottom-electrode interface structure for memory
#26Semiconductor device and method of forming the same
#27Memory cell, capacitive memory structure, and methods thereof
#28Capacitor and method for fabricating the same
#29Doped polar layers and semiconductor device incorporating same
#30Capacitor comprising a bismuth metal oxide-based lead titanate thin film
#31Doped polar layers and semiconductor device incorporating same
#32Doped polar layers and semiconductor device incorporating same
#33Doped polar layers and semiconductor device incorporating same
#34Doped polar layers and semiconductor device incorporating same
#35Doped polar layers and semiconductor device incorporating same
#36Doped polar layers and semiconductor device incorporating same
#37Semiconductor device and method of forming the same
#38Capacitor and method for fabricating the same
#39Doped polar layers and semiconductor device incorporating same
#40Doped polar layers and semiconductor device incorporating same
#41Doped polar layers and semiconductor device incorporating same
#42Doped polar layers and semiconductor device incorporating same
#43FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM
#44CAPACITOR WITH EPITAXIAL STRAIN ENGINEERING
#45Semiconductor device fabrication method and semiconductor device
#46Semiconductor device
#47Semiconductor device including an electrode lower layer and an electrode upper layer and method of manufacturing semiconductor device
#48Semiconductor device and fabrication method
#49Micro-electronic electrode assembly
#50Sensor array with anti-diffusion region(s) to extend shelf life
#51Capacitor comprising a bismuth metal oxide-based lead titanate thin film
#52Damascene oxygen barrier and hydrogen barrier for ferroelectric random-access memory
#53Semiconductor device and method of manufacturing the same
#54SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC CAPACITOR AND METHOD OF MANUFACTURING THE SAME
#55Semiconductor device and manufacturing method for same
#56Ferroelectric memory array surrounded by ferroelectric dummy capacitors
#57Semiconductor storage device and method for manufacturing the semiconductor storage device
#58Electrode for a metal-insulator-metal structure, capacitor of metal-insulator-metal type, and method for fabricating one such electrode and one such capacitor
#59Ferroelectric random-access memory with pre-patterned oxygen barrier
#60Semiconductor device including an electrode lower layer and an electrode upper layer and method of manufacturing semiconductor device
#61Semiconductor device including an electrode lower layer and an electrode upper layer and method of manufacturing semiconductor device
#62Semiconductor storage device and method for manufacturing the semiconductor storage device
#63Semiconductor device and method of manufacturing the same
#64MIM capacitor
#65SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME
#66DAMASCENE OXYGEN BARRIER AND HYDROGEN BARRIER FOR FERROELECTRIC RANDOM-ACCESS MEMORY
#67Semiconductor storage device and method for manufacturing the semiconductor storage device
#68Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an F-RAM process
#69Thermal treatment for reducing transistor performance variation in ferroelectric memories
#70Method of etching ferroelectric capacitor stack
#71Semiconductor device including an electrode lower layer and an electrode upper layer and method of manufacturing semiconductor device
#72Semiconductor device including an electrode lower layer and an electrode upper layer and method of manufacturing semiconductor device
#73Methods of fabricating an F-RAM
#74FERROELECTRIC CAPACITOR ENCAPSULATED WITH A HYDROGEN BARRIER
#75Metal-insualtor-metal (MIM) device and method of formation thereof
#76Manufacture method for semiconductor device capable of preventing reduction of ferroelectric film
#77SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#78Hydrogen-blocking film for ferroelectric capacitors
#79Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an F-RAM process
#80Electronic component with reactive barrier and hermetic passivation layer
#81Metal-insulator-metal (MIM) device and method of formation thereof
#82Heat treatment apparatus and method of manufacturing semiconductor device
#83Hydrogen barrier for ferroelectric capacitors
#84Metal-insulator-metal stack and method for manufacturing the same
#85Hydrogen-Blocking Film for Ferroelectric Capacitors
#86Ferroelectric memory device and fabrication process thereof, fabrication process of a semiconductor device
#87FERROELECTRIC CAPACITOR ENCAPSULATED WITH A HYDROGEN BARRIER
#88Hydrogen barrier for ferroelectric capacitors
#89Semiconductor device and method of manufacturing the same
#90Semiconductor device and method for manufacturing the same
#91Method for manufacturing semiconductor memory device
#92Semiconductor device and manufacturing method thereof
#93Method for making semiconductor device having ferroelectric capacitor therein
#94Semiconductor device and method for manufacturing the same
#95Semiconductor storage device and method for manufacturing the semiconductor storage device
#96FERROELECTRIC CAPACITOR ENCAPSULATED WITH A HYDROGEN BARRIER
#97Hydrogen barrier for ferroelectric capacitors
#98Ferroelectric memory device and fabrication process thereof, fabrication process of a semiconductor device
#99Ferroelectric ultrathin perovskite films
#100Semiconductor Device Having Reduced Single Bit Fails and a Method of Manufacture Thereof
#101SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#102Manufacturing method of semiconductor device
#103SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#104PRODUCTION OF INTEGRATED CIRCUITS COMPRISING SEMICONDUCTOR INCOMPATIBLE MATERIALS
#105Method of forming capacitors
#106Electronic component with reactive barrier and hermetic passivation layer
#107Thin film capacitor and manufacturing method therefor
#108SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME
#109NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING NON-VOLATILE MEMORY DEVICE
#110Heat treatment apparatus and method of manufacturing semiconductor device
#111NOVEL CAPACITORS AND CAPACITOR-LIKE DEVICES
#112Semiconductor device including an electrode lower layer and an electrode upper layer and method of manufacturing semiconductor device
#113SEMICONDUCTOR MEMORY DEVICE
#114MANUFACTURE METHOD FOR SEMICONDUCTOR DEVICE CAPABLE OF PREVENTING REDUCTION OF FERROELECTRIC FILM
#115Semiconductor device having a ferroelectric capacitor and method of manufacturing the same
#116Semiconductor device and manufacturing method thereof
#117Semiconductor device and manufacturing method of the same
#118Ferroelectric memory device and fabrication process thereof, fabrication process of a semiconductor device
#119Thin-film capacitor with a field modification layer
#120Semiconductor device and method for fabricating the same
#121Semiconductor device and manufacturing method thereof
#122CAPACITOR, METHOD OF MANUFACTURING THE SAME, METHOD OF MANUFACTURING FERROELECTRIC MEMORY DEVICE, METHOD OF MANUFACTURING ACTUATOR, AND METHOD OF MANUFACTURING LIQUID JET HEAD
#123Electronic component with reactive barrier and hermetic passivation layer
#124Metal-insulator-metal (MIM) device and method of formation thereof
#125SEMICONDUCTOR MEMORY DEVICE AND FABRICATING METHOD FOR SEMICONDUCTOR MEMORY DEVICE
#126CAPACITOR, METHOD OF MANUFACTURING THE SAME, METHOD OF MANUFACTURING FERROELECTRIC MEMORY DEVICE, METHOD OF MANUFACTURING ACTUATOR, AND METHOD OF MANUFACTURING LIQUID JET HEAD
#127Method for manufacturing ferroelectric memory device
#128Semiconductor device having a contact hole with a curved cross-section and its manufacturing method
#129Ferroelectric capacitor device and method with optimum hysteresis characteristics
#130Semiconductor device having reduced single bit fails and a method of manufacture thereof
#131METHOD OF DEPOSITING AMORPHOUS FILM ON CAPACITOR ASSEMBLY
#132SEMICONDUCTOR DEVICE
#133Semiconductor device and its manufacturing method
#134SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
#135Method for manufacturing ferroelectric capacitor
#136Ferroelectric memory device, ferroelectric memory manufacturing method, and semiconductor manufacturing method
#137Semiconductor device, semiconductor wafer structure and method for manufacturing the semiconductor wafer structure
#138Semiconductor device and method for manufacturing the same
#139SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#140Ferroelectric capacitor and its manufacturing method
#141Semiconductor device with ferro-electric capacitor
#142Semiconductor device and fabrication process thereof
#143Semiconductor device and method of manufacturing the same
#144Method of manufacturing semiconductor device, method of manufacturing semiconductor substrate and semiconductor substrate
#145Ferroelectric memory device and fabrication process thereof, fabrication process of a semiconductor device
#146SEMICONDUCTOR DEVICE
#147Thin film capacitor and manufacturing method therefor
#148Manufacturing method for ferroelectric memory device
#149Semiconductor device and manufacturing method thereof
#150Semiconductor device and semiconductor product
#151NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING NON-VOLATILE MEMORY DEVICE
#152SEMICONDUCTOR DEVICE HAVING FERROELECTRIC MEMORY CELL AND METHOD FOR FABRICATING THE SAME
#153Semiconductor device and method for manufacturing the same
#154Systems and methods of forming tantalum silicide layers
#155Semiconductor device and method of fabricating the same
#156SEMICONDUCTOR DEVICE
#157FERROELECTRIC RANDOM ACCESS MEMORY AND METHODS OF FABRICATING THE SAME
#158SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#159Non-volatile semiconductor memory device and method for fabricating the same
#160Contact structure having conductive oxide layer, ferroelectric random access memory device employing the same and methods of fabricating the same
#161Systems and methods of forming refractory metal nitride layers using organic amines
#162Semiconductor device with capacitors and its manufacture method
#163Direct cell via structures for ferroelectric random access memory devices and methods of fabricating such structures
#164Method for manufacturing ferroelectric memory
#165SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#166Hermetic Passivation Layer Structure for Capacitors with Perovskite or Pyrochlore Phase Dielectrics
#167Semiconductor device having a contact hole extending from an upper surface of an insulating film and reaching one of a plurality of impurity regions constituting a transistor and method of manufacturing the same
#168SEMICONDUCTOR DEVICE
#169Semiconductor device and method for fabricating the same
#170Top electrode barrier for on-chip die de-coupling capacitor and method of making same
#171Semiconductor device and manufacturing method of the same
#172Semiconductor device and manufacturing method thereof
#173Method for manufacturing ferroelectric memory device
#174Ferroelectric memory device and method for manufacturing ferroelectric memory device
#175Thin film capacitor device used for a decoupling capacitor and having a resistor inside
#176Method of manufacturing semiconductor device, and semiconductor device
#177METHOD OF MANUFACTURING FERROELECTRIC CAPACITOR AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
#178Thin-film capacitor with a field modification layer and methods for forming the same
#179Semiconductor device fabrication method
#180Method for Manufacturing Ferroelectric Memory
#181FERROELECTRIC MEMORY AND METHOD FOR MANUFACTURING FERROELECTRIC MEMORY
#182Semiconductor device and method for fabricating the same
#183Semiconductor device and manufacturing method of the same
#184Capacitor assembly
#185Semiconductor device
#186Semiconductor device and manufacturing method therefor
#187Semiconductor device and method of manufacturing the same
#188Passivation structure for ferroelectric thin-film devices
#189Semiconductor device including direct contact between capacitor electrode and contact plug and method of manufacturing the same
#190Method of manufacturing semiconductor device
#191Capacitor, method of manufacturing the same, method of manufacturing ferroelectric memory device, method of manufacturing actuator, and method of manufacturing liquid jet head
#192Ferroelectric memory device
#193Semiconductor device
#194Semiconductor device and manufacturing method of the same
#195DRAM constructions and electronic systems
#196Semiconductor device and manufacturing method of the same
#197METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#198Method of manufacturing a ferroelectric capacitor with a hydrogen barrier layer
#199Method for fabricating nonvolatile semiconductor memory device
#200Dielectric memory and method for manufacturing the same
#201Semiconductor device having interlayer insulating film covered with hydrogen diffusion barrier film and its manufacture method
#202Semiconductor device and manufacturing method therefor
#203High-K dielectric materials and processes for manufacturing them
#204Ferroelectric memory device and manufacturing method thereof
#205Semiconductor device and manufacturing method thereof
#206Layer capacitor element and production process as well as electronic device
#207Semiconductor device for non-volatile memory and method of manufacturing the same
#208Process for fabricating an integrated circuit including a capacitor with a copper electrode
#209Semiconductor device and method of fabricating the same
#210Semiconductor device and method of fabricating the same
#211Ferroelectric memory device and method of manufacture of same
#212Semiconductor device and fabricating method of the same
#213Semiconductor device and method for fabricating the same
#214Semiconductor device and manufacturing method of the same
#215Semiconductor device suitable for a ferroelectric memory and manufacturing method of the same
#216Method for manufacturing semiconductor device
#217Method of manufacturing semiconductor device
#218Method for fabricating semiconductor device
#219Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same
#220Semiconductor memory device having ferroelectric capacitors with hydrogen barriers
#221System and device including a barrier layer
#222Semiconductor storage device and manufacturing method for the same
#223FeRAM device and method for manufacturing the same
#224Semiconductor device having ferroelectric capacitor and its manufacture method
#225Method of fabricating a semiconductor device capacitor having a dielectric barrier layer and a semiconductor device capacitor having the same
#226Ferroelectric capacitor stack etch cleaning methods
#227Ferroelectric integrated circuit devices having an oxygen penetration path
#228Ferroelectric memory and method for manufacturing the same
#229Ferroelectric memory and its manufacturing method
#230Semiconductor device and manufacturing method thereof
#231Ferroelectric film, ferroelectric capacitor, ferroelectric memory, piezoelectric element, semiconductor element, method of manufacturing ferroelectric film, and method of manufacturing ferroelectric capacitor
#232Ferroelectric film, ferroelectric capacitor, ferroelectric memory, piezoelectric element, semiconductor element, method of manufacturing ferroelectric film, and method of manufacturing ferroelectric capacitor
#233Ferroelectric memory and method of manufacturing the same
#234Semiconductor device and method for fabricating the same
#235Semiconductor memory device including capacitor with conductive hydrogen diffusion prevention wiring film
#236Ferroelectric capacitor structure and manufacturing method thereof
#237Ferroelectric memory cells and methods for fabricating ferroelectric memory cells and ferroelectric capacitors thereof
#238Method of fabricating memory and memory
#239Systems and methods of forming tantalum silicide layers
#240Metal insulator metal (MIM) capacitor fabrication with sidewall spacers and aluminum cap (ALCAP) top electrode
#241Semiconductor device and method for manufacturing the same
#242Ferroelectric random access memory capacitor and method for manufacturing the same
#243Semiconductor storage device and method of manufacturing the same
#244Systems and methods of forming refractory metal nitride layers using organic amines
#245Semiconductor device and ferroelectric memory, and method for manufacturing semiconductor device
#246Semiconductor device and method for fabricating a semicondutor device including first and second hydrogen diffusion preventing films
#247Method for manufacturing semiconductor device, and semiconductor device
#248Method for manufacturing semiconductor device
#249System and device including a barrier layer
#250Semiconductor device having ferroelectric capacitors
#251Semiconductor device and method for fabricating the same
#252Semiconductor device
#253Semiconductor device and method of manufacturing the same
#254Ferroelectric capacitor having an oxide electrode template and a method of manufacture therefor
#255Ferroelectric memory element and its manufacturing method
#256Ferro-electric memory device and method of manufacturing the same
#257Ferroelectric memory device with merged-top-plate structure and method for fabricating the same
#258Ferroelectric capacitor hydrogen barriers and methods for fabricating the same
#259Ferroelectric capacitor hydrogen barriers and methods for fabricating the same
#260Hydrogen barrier layer and method for fabricating semiconductor device having the same
#261Non-continuous encapsulation layer for MIM capacitor
#262Semiconductor device and method of manufacturing the same
#263High-k dielectric materials and processes for manufacturing them
#264Capacitor element
#265Semiconductor device and method for manufacturing the same
#266Ferroelectric capacitor and method of manufacturing the same
#267Method of manufacturing semiconductor device
#268Semiconductor device and method of manufacturing the same
#269Manufacturing method of semiconducter device
#270Method of manufacturing ferroelectric semiconductor device
#271Method for manufacturing semiconductor device
#272Semiconductor device and fabrication method of a semiconductor device
#273Capacitor structure
#274Ferroelectric capacitor devices and FeRAM devices
#275Semiconductor device and method of manufacturing the same
#276Method for producing a ferroelectric capacitor that includes etching with hardmasks
#277Semiconductor storage device which includes a hydrogen diffusion inhibiting layer
#278Device for inhibiting hydrogen damage in ferroelectric capacitor devices
#279Thin film capacitor and method for fabricating the same
#280Low silicon-hydrogen sin layer to inhibit hydrogen related degradation in semiconductor devices having ferroelectric components
#281Formation of a contact in a device, and the device including the contact
#282MOCVD of TiO2 thin film for use as FeRAM H2 passivation layer
#283Multi-layer barrier allowing recovery anneal for ferroelectric capacitors
#284Semiconductor device and method for fabricating the same
#285Hydrogen barrier for protecting ferroelectric capacitors in a semiconductor device and methods for fabricating the same
#286Pocket flow for trench capacitors integrated with planar capacitors on a same substrate and method of fabrication
#287Trench capacitors with continuous dielectric layer and methods of fabrication
#288Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures
#289Ferroelectric device film stacks with texturing layer, and method of forming such
#290MIM capacitor, semiconductor structure including MIM capacitors and method for manufacturing the same
#291Method for fabricating ferroelectric random-access memory on pre-patterned bottom electrode and oxidation barrier