208203 ⎘
Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor; Capacitors; Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
Device with integrated capacitance structure
#302Method of forming a semiconductor device having air gaps and the structure so formed
#303Silicon barrier capacitor device structure
#304High density MIMCAP with a unit repeatable structure
#305Enhanced on-chip decoupling capacitors and method of making same
#306Capacitor for semiconductor device and method of forming the same
#307On-chip bypass capacitor and method of manufacturing the same
#308Capacitor element, semiconductor integrated circuit and method of manufacturing those
#309Stacked staggered electrode foil capacitor structures in semiconductor devices for single and multi-voltage domain applications and method of fabrication
#310Decoupling capacitor integrated in system on chip (SOC) device
#311Multilayer buried metal-insultor-metal capacitor structures
#312MIM capacitor, semiconductor structure including MIM capacitors and method for manufacturing the same
#313Compound semiconductor transistor integration with high density capacitor
#314Metal-insulator-metal (MIM) capacitor structure and method for forming the same
#315High-K metal-insulator-metal capacitor and method of manufacturing the same
#316Capacitor structure of integrated circuit chip and method of fabricating the same