208236 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes; Emitter regions of bipolar transistors Non-interconnected multi-emitter structures
Bipolar transistor and radio-frequency power amplifier module
#2Bipolar transistor and radio-frequency power amplifier module
#3Method of forming epitaxial silicon layer and semiconductor device thereof
#4Semiconductor device
#5Bipolar junction transistor
#6Semiconductor device
#7Method of forming epitaxial silicon layer and semiconductor device thereof
#8Semiconductor structure with strain reduction
#9Bipolar transistor and radio-frequency power amplifier module
#10Hybrid cascode constructions with multiple transistor types
#11Semiconductor device including insulated gate bipolar transistor element and freewheeling diode element
#12Bipolar transistor semiconductor device
#13Bipolar junction transistor
#14Junction barrier schottky diode with enhanced surge current capability
#15Method of forming MOS and bipolar transistors
#16Forming a metal contact layer on silicon carbide and semiconductor device with metal contact structure
#17Semiconductor device
#18Method of manufacturing semiconductor device
#19Bipolar junction transistor and method of manufacturing the same
#20Semiconductor device
#21Bipolar junction transistors with double-tapered emitter fingers
#22Semiconductor structure including a thermally conductive, electrically insulating layer
#23Semiconductor device with multilayer contact and method of manufacturing the same
#24Semiconductor device with auxiliary structure including deep level dopants
#25Power semiconductor device and corresponding module
#26ESD protection element
#27Transistor and method of manufacturing a transistor
#28Power semiconductor device and method for manufacturing such a power semiconductor device
#29Semiconductor device
#30Semiconductor device with multilayer contact and method of manufacturing the same
#31Method of manufacturing a bipolar transistor and bipolar transistor
#32Transistor and method of manufacturing a transistor
#33ESD protection element
#34METHOD AND DEVICE WITH IMPROVED BASE ACCESS RESISTANCE FOR NPN BIPOLAR TRANSISTOR
#35Robust ESD cell
#36Bipolar transistor including divided emitter structure
#37Heterojunction bipolar transistors with multiple emitter fingers and undercut extrinsic base regions