208237 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes; Emitter regions of bipolar transistors of heterojunction bipolar transistors
HETEROJUNCTION BIPOLAR TRANSISTOR AND BASE-COLLECTOR GRADE LAYER
#2BIPOLAR JUNCTION TRANSISTORS AND METHODS OF FORMING THE SAME
#3SIGE HBT AND METHODS OF MANUFACTURING THE SAME
#4SEMICONDUCTOR DEVICE
#5Epitaxial structure and transistor including the same
#6SEMICONDUCTOR DEVICE WITH LATERAL BASE LINK REGION
#7HETEROJUNCTION BIPOLAR TRANSISTORS WITH A CUT STRESS LINER
#8MANUFACTURING METHOD
#9LATERAL BIPOLAR TRANSISTOR WITH GATED COLLECTOR
#10SEMICONDUCTOR DEVICE
#11Heterojunction Bipolar Transistor
#12Bipolar junction transistors and methods of forming the same
#13BIPOLAR JUNCTION TRANSISTOR
#14Vertical bipolar junction transistor and method
#15BIPOLAR TRANSISTORS
#16Bipolar transistor with collector contact
#17Non-self-aligned lateral bipolar junction transistors
#18Lateral bipolar transistor with gated collector
#19Lateral heterojunction bipolar transistor with emitter and/or collector regrown from substrate and method
#20Bipolar junction transistors including a stress liner
#21Annular bipolar transistors
#22Fin-based lateral bipolar junction transistor with reduced base resistance and method
#23Germanium-Silicon-Tin (GeSiSn) Heterojunction Bipolar Transistor Devices
#24Heterojunction bipolar transistor and power amplifier
#25COMPACT SWITCHING CIRCUIT PROVIDED WITH HETEROJUNCTION TRANSISTORS
#26Methods of manufacture of advanced wafer bonded heterojunction bipolar transistors
#27Integrated circuit structure and method for bipolar transistor stack within substrate
#28Semiconductor device
#29Hetero-junction bipolar transistor and method for manufacturing the same
#30Symmetric read operation resistive random-access memory cell with bipolar junction selector
#31Low parasitic Cheterojunction bipolar transistor
#32Bipolar transistor and method for producing the same
#33Heterojuction bipolar transistor
#34Bipolar junction transistor (BJT) comprising a multilayer base dielectric film
#35Heterojunction bipolar transistor with a silicon oxide layer on a silicon germanium base
#36Heterojunction bipolar transistor and method for forming the same
#37Bipolar transistor and radio-frequency power amplifier module
#38Vertical high-blocking III-V bipolar transistor
#39Double mesa heterojunction bipolar transistor
#40Semiconductor device
#41Semiconductor device
#42TRANSISTOR AND MANUFACTURING METHOD THEREOF
#43Heterojunction bipolar transistor including ballast resistor and semiconductor device
#44Method for manufacturing a bipolar transistor and bipolar transistor capable of being obtained by such a method
#45Epitaxial structure and transistor including the same
#46Bipolar transistor and method for producing the same
#47Lateral heterojunction bipolar transistors with asymmetric junctions
#48Semiconductor device
#49Bipolar transistor
#50High-voltage terahertz strained SiGe/InGaP heterojunction bipolar transistor and preparation method thereof
#51Bipolar junction transistor (BJT) comprising a multilayer base dielectric film
#52Semiconductor device and power amplifier module
#53Semiconductor device
#54Semiconductor device
#55Double mesa heterojunction bipolar transistor
#56Self-aligned collector heterojunction bipolar transistor (HBT)
#57Unit cell and power amplifier module
#58Heterojunction bipolar transistor
#59Heterojunction bipolar transistor with marker layer
#60Heterojunction bipolar transistors
#61Heterojunction bipolar transistor
#62Self-aligned base and emitter for a bipolar junction transistor
#63Bipolar transistor with segmented emitter contacts
#64Compound semiconductor heterojunction bipolar transistor
#65Heterojunction bipolar transistor
#66Heterojunction bipolar transistors having bases with different elevations
#67Bipolar transistor and method for producing the same
#68Semiconductor device
#69Monolithic self-aligned heterojunction bipolar transistor (HBT) and complementary metal-oxide-semiconductor (CMOS)
#70Heterojunction bipolar transistors with field plates
#71Bipolar transistor and radio-frequency power amplifier module
#72Semiconductor element
#73Semiconductor apparatus including different thermal resistance values for different heat transfer paths
#74Heterojunction bipolar transistor
#75Heterojunction bipolar transistor
#76Common-emitter and common-base heterojunction bipolar transistor
#77High ruggedness heterojunction bipolar transistor
#78Method for forming a heterojunction bipolar transistor and a heterojunction bipolar transistor device
#79Bipolar transistor
#80Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer
#81Semiconductor device and power amplifier module
#82Semiconductor device
#83Bipolar transistor
#84P-N junction based devices with single species impurity for P-type and N-type doping
#85High ruggedness heterojunction bipolar transistor structure
#86Advanced wafer bonded heterojunction bipolar transistors and methods of manufacture of advanced wafer bonded heterojunction bipolar transistors
#87Bipolar transistor and method for producing the same
#88Vertical fin type bipolar junction transistor (BJT) device with a self-aligned base contact
#89Single column compound semiconductor bipolar junction transistor with all-around base
#90Integrated circuit including at least one nano-ridge transistor
#91Heterojunction bipolar transistor including ballast resistor and semiconductor device
#92LOW COLLECTOR CONTACT RESISTANCE HETEROJUNCTION BIPOLAR TRANSISTORS
#93P-N junction based devices with single species impurity for P-type and N-type doping
#94Bipolar junction transistor and method of fabricating the same
#95SiGe heterojunction bipolar transistor with crystalline raised base on germanium etch stop layer
#96Fabrication of heterojunction bipolar transistors with a selectively grown collector/sub-collector
#97Semiconductor device
#98Semiconductor device with multiple HBTs having different emitter ballast resistances
#99Semiconductor device
#100Heterojunction bipolar transistors with an inverted crystalline boundary in the base layer
#101Semiconductor device and method of manufacturing a semiconductor device
#102Low collector contact resistance heterojunction bipolar transistors
#103Semiconductor device and power amplifier module
#104Germanium-silicon-tin (GeSiSn) heterojunction bipolar transistor devices
#105Semiconductor device
#106Cascode heterojunction bipolar transistor
#107Bipolar transistor and method for producing the same
#108Semiconductor devices with regrown contacts and methods of fabrication
#109Heterojunction bipolar transistor (HBT)
#110MESH STRUCTURE FOR HETEROJUNCTION BIPOLAR TRANSISTORS FOR RF APPLICATIONS
#111Semiconductor device
#112Semiconductor element
#113Vertical fin bipolar junction transistor with high germanium content silicon germanium base
#114Single column compound semiconductor bipolar junction transistor with all-around base
#115Wafer bonded GaN monolithic integrated circuits and methods of manufacture of wafer bonded GaN monolithic integrated circuits
#116Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer
#117Heterojunction bipolar transistor
#118Bipolar transistor and radio-frequency power amplifier module
#119Semiconductor device with multiple HBTS having different emitter ballast resistances
#120Semiconductor device having a collector layer including first-conductivity-type semiconductor layers
#121Bipolar transistor semiconductor device
#122Cascode heterojunction bipolar transistors
#123Bipolar semiconductor device with silicon alloy region in silicon well and method for making
#124Trench-gated heterostructure and double-heterostructure active devices
#125Heterojunction bipolar transistor
#126Method for manufacturing a bipolar junction transistor
#127Semiconductor device and power amplifier circuit
#128Bipolar transistor and method for producing the same
#129Heterojunction bipolar transistor
#130Heterojunction bipolar transistor unit cell and power stage for a power amplifier
#131Heterojunction bipolar transistor with a thickened extrinsic base
#132Electro-optical and optoelectronic devices
#133Semiconductor device
#134Semiconductor device with multiple HBTs having different emitter ballast resistances
#135Bipolar transistor and method for producing the same
#136BiMOS device with a fully self-aligned emitter-silicon and method for manufacturing the same
#137Heterojunction bipolar transistor
#138Method for manufacturing etch stop areas for contacting semiconductor devices
#139Semiconductor device structure with non planar slide wall
#140Heterojunction bipolar transistor
#141Method of junction control for lateral bipolar junction transistor
#142Method of junction control for lateral bipolar junction transistor
#143Fabrication of integrated circuit structures for bipolar transistors
#144Co-integration of self-aligned and non-self aligned heterojunction bipolar transistors
#145Heterojunction bipolar transistor
#146Biosensor based on heterojunction bipolar transistor
#147SYSTEMS AND METHODS FOR PROVIDING VERTICAL ACCESS TO THE COLLECTOR OF A HETEROJUNCTION BIPOLAR TRANSISTOR
#148Heterojunction bipolar transistor fully self-aligned to diffusion region with strongly minimized substrate parasitics and selective pre-structured epitaxial base link
#149Method for manufacturing an emitter for high-speed heterojunction bipolar transistors
#150Method for manufacturing a bipolar junction transistor
#151BIPOLAR JUNCTION TRANSISTOR DEVICE HAVING BASE EPITAXY REGION ON ETCHED OPENING IN DARC LAYER
#152Advanced wafer bonded heterojunction bipolar transistors and methods of manufacture of advanced wafer bonded heterojunction bipolar transistors
#153Heterojunction bipolar transistor
#154Semiconductor device with multiple HBTs having different emitter ballast resistances
#155Methodologies related to structures having HBT and FET
#156Method of making a graphene base transistor with reduced collector area
#157Semiconductor device
#158Heterojunction bipolar transistor
#159Amplifier device comprising enhanced thermal transfer and structural features
#160Bidirectional semiconductor switch with passive turnoff
#161Vertical semiconductor device and manufacturing method thereof
#162Heterojunction bipolar transistor
#163BiMOS device with a fully self-aligned emitter-silicon and method for manufacturing the same
#164Semiconductor device
#165Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having an epitaxially grown base
#166Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having an epitaxially grown base
#167Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors
#168Semiconductor structure including a thermally conductive, electrically insulating layer
#169Methods of operating a double-base-contact bidirectional bipolar junction transistor
#170Bipolar junction transistor (BJT) base conductor pullback
#171Semiconductor device comprising a bipolar transistor
#172Transistor and method of making
#173Biosensor based on heterojunction bipolar transistor
#174BIOSENSOR BASED ON HETEROJUNCTION BIPOLAR TRANSISTOR
#175Semiconductor device
#176Method of making a graphene base transistor with reduced collector area
#177Bidirectional two-base bipolar junction transistor operation, circuits, and systems with double base short at initial turn-off
#178Bidirectional two-base bipolar junction transistor operation, circuits, and systems with diode-mode turn-on
#179Bidirectional two-base bipolar junction transistor operation, circuits, and systems with collector-side base driven
#180BIPOLAR JUNCTION TRANSISTORS WITH REDUCED EPITAXIAL BASE FACETS EFFECT FOR LOW PARASITIC COLLECTOR-BASE CAPACITANCE
#181Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistor
#182Transistor laser optical switching and memory techniques and devices
#183Heterojunction bipolar transistor with two base layers
#184Devices and methodologies related to structures having HBT and FET
#185Active photonic device having a Darlington configuration
#186Heterojunction bipolar transistors for improved radio frequency (RF) performance
#187Bipolar junction transistor device having base epitaxy region on etched opening in DARC layer
#188Bidirectional two-base bipolar junction transistor devices, operation, circuits, and systems with collector-side base driven, diode-mode turn-on, double base short at initial turn-off, and two base junctions clamped by default
#189ITC-IGBT and manufacturing method therefor
#190Base profile of self-aligned bipolar transistors for power amplifier applications
#191Vertically base-connected bipolar transistor
#192Bidirectional bipolar junction transistor operation, circuits, and systems with two base junctions clamped by default
#193HETEROJUNCTION BIPOLAR TRANSISTORS WITH INTRINSIC INTERLAYERS
#194Heterojunction bipolar transistors with intrinsic interlayers
#195Transistor having a heterojunction and manufacturing method thereof
#196Nitride semiconductor device and method of manufacturing the same
#197Method for fabricating a bipolar transistor having self-aligned emitter contact
#198Lateral heterojunction bipolar transistor with low temperature recessed contacts
#199Systems, circuits, devices, and methods with bidirectional bipolar transistors
#200Systems, circuits, devices, and methods with bidirectional bipolar transistors
#201Heterojunction bipolar transistors with reduced parasitic capacitance
#202Systems, circuits, devices, and methods with bidirectional bipolar transistors
#203Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technology
#204Advanced heterojunction devices and methods of manufacturing advanced heterojunction devices
#205Junction field-effect transistor with raised source and drain regions formed by selective epitaxy
#206Systems, circuits, devices, and methods with bidirectional bipolar transistors
#207Systems, circuits, devices, and methods with bidirectional bipolar transistors
#208Method of forming a bipolar transistor with maskless self-aligned emitter
#209Bipolar transistor with embedded epitaxial external base region and method of forming the same
#210Graphene base transistor with reduced collector area
#211Heterojunction bipolar transistor having a germanium extrinsic base utilizing a sacrificial emitter post
#212Heterojunction bipolar transistor having a germanium raised extrinsic base
#213Bipolar junction transistors with reduced base-collector junction capacitance
#214Transistor and method of forming the transistor so as to have reduced base resistance
#215Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technology
#216Dual mode tilted-charge devices and methods
#217pHEMT HBT INTEGRATED EPITAXIAL STRUCTURE AND A FABRICATION METHOD THEREOF
#218BIPOLAR TRANSISTOR WITH EMBEDDED EPITAXIAL EXTERNAL BASE REGION AND METHOD OF FORMING THE SAME
#219SiGe heterojunction bipolar transistor with a shallow out-diffused P+ emitter region
#220Heterojunction bipolar transistor with epitaxial emitter stack to improve vertical scaling
#221Junction field-effect transistor with raised source and drain regions formed by selective epitaxy
#222SiGe HBT and manufacturing method thereof
#223SiGe HBT having deep pseudo buried layer and manufacturing method thereof
#224Gallium arsenide heterojunction semiconductor structure
#225Bipolar transistor with low resistance base contact and method of making the same
#226SIGE HBT HAVING A POSITION CONTROLLED EMITTER-BASE JUNCTION
#227TRANSISTOR AND METHOD OF FORMING THE TRANSISTOR SO AS TO HAVE REDUCED BASE RESISTANCE
#228Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance
#229Spacer formation in the fabrication of planar bipolar transistors
#230Devices and methodologies related to structures having HBT and FET
#231Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance
#232Vertical parasitic PNP device in a BiCMOS process and manufacturing method of the same
#233Bipolar transistor having self-adjusted emitter contact
#234Stress release structures for metal electrodes of semiconductor devices
#235Bipolar transistor
#236High on-state breakdown heterojunction bipolar transistor
#237HIGH ON-STATE BREAKDOWN HETEROJUNCTION BIPOLAR TRANSISTOR
#238HETERO JUNCTION BIPOLAR TRANSISTOR
#239Self-aligned bipolar transistor structure
#240Heterojunction bipolar transistor device with electrostatic discharge ruggedness
#241Bipolar transistor with low resistance base contact
#242High performance collector-up bipolar transistor
#243Integration of an NPN device with phosphorus emitter and controlled emitter-base junction depth in a BiCMOS process
#244SEMICONDUCTOR DEVICE AND INTEGRATED SEMICONDUCTOR CIRCUIT DEVICE
#245BIPOLAR TRANSISTOR WITH LOW RESISTANCE BASE CONTACT AND METHOD OF MAKING THE SAME
#246Transistor
#247Semiconductor device and method of fabricating the same
#248Vertically base-connected bipolar transistor
#249Semiconductor device with a bipolar transistor and method of manufacturing such a device
#250Method and system for providing a drift coupled device
#251Transistor epitaxial wafer and transistor produced by using same
#252Hetero junction bipolar transistor and method of manufacturing the same
#253Manufacturing method for semiconductor device
#254Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization
#255Bipolar transistor and method for fabricating the same
#256HETEROJUNCTION BIPOLAR TRANSISTOR
#257Semiconductor device
#258Bipolar transistor with high dynamic performances
#259Heterjunction bipolar transistor with tunnelling mis emitter junction
#260Heterojunction bipolar transistor and manufacturing method thereof
#261Heterojunction bipolar transistor
#262Semiconductor device
#263Heterobipolar transistor
#264Bipolar transistor with high dynamic performances
#265High on-state breakdown heterojunction bipolar transistor
#266Heterojunction bipolar transistor with a base layer that contains bismuth
#267Semiconductor element and method for fabricating the same
#268Heterojunction bipolar transistor having an emitter layer made of a semiconductor material including aluminum
#269RNA interference mediated treatment of Parkinson disease using short interfering nucleic acid (siNA)
#270Heterojunction bipolar transistor with a base layer that contains bismuth
#271Bipolar transistor
#272BiFET including a FET having increased linearity and manufacturability
#273Heterojunction bipolar transistor with self-aligned emitter and sidewall base contact
#274Semiconductor device
#275Heterojunction bipolar transistor
#276Semiconductor structure for a heterojunction bipolar transistor and a method of making same
#277BJT device configuration and fabrication method with reduced emitter width
#278Semiconductor device suited for a high frequency amplifier
#279Heterojunction bipolar transistor and method for forming the same
#280High performance super-beta NPN (SBNPN)
#281Self-aligned base contacts for vertical fin-type bipolar junction transistors
#282P-N junction based devices with single species impurity for P-type and N-type doping
#283Heterojunction bipolar transistors with multiple emitter fingers and undercut extrinsic base regions
#284Bi-stable static random access memory (SRAM) bit cells formed from III-V compounds and configured to achieve higher operating speeds
#285SiGe heterojunction bipolar transistor with crystalline raised base on germanium etch stop layer
#286Heterojunction bipolar transistor
#287Nitride heterojunction bipolar transistor with polarization-assisted alloy hole-doped short-period superlattice emitter or collector layers
#288Integration of bipolar transistor into complimentary metal-oxide-semiconductor process
#289Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown
#290Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown
#291Field plate in heterojunction bipolar transistor with improved break-down voltage