ClassID:

208239

H01L29/0826 - CPC Classification

Classification description:

Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes; Collector regions of bipolar transistors Pedestal collectors

Recent Application in this class:
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POWER AMPLIFIER SYSTEMS INCLUDING CONTROL INTERFACE AND WIRE BOND PAD

#2
20250015128
2025-01-09

HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION REGION

#3
20240304707
2024-09-12

SIGE HBT AND METHODS OF MANUFACTURING THE SAME

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SEMICONDUCTOR DEVICE HAVING AN EXTRINSIC BASE REGION WITH A MONOCRYSTALLINE REGION AND METHOD THEREFOR

#5
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2023-09-21

Heterojunction bipolar transistor with buried trap rich isolation region

#6
20220393653
2022-12-08

Power amplifier modules including semiconductor resistor and tantalum nitride terminated through wafer via

#7
20220123107
2022-04-21

Heterojunction bipolar transistor with buried trap rich isolation region

#8
20220093775
2022-03-24

Semiconductor device

#9
20220029004
2022-01-27

Bipolar transistor and radio-frequency power amplifier module

#10
20210320194
2021-10-14

Heterojunction bipolar transistor including ballast resistor and semiconductor device

#11
20210167187
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Low parasitic Ccb heterojunction bipolar transistor

#12
20210125982
2021-04-29

Semiconductor device

#13
20210098585
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Unit cell and power amplifier module

#14
20210083080
2021-03-18

Semiconductor device

#15
20210050826
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Power amplifier systems with control interface and bias circuit

#16
20200373417
2020-11-26

Heterojunction bipolar transistor

#17
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Monolithic self-aligned heterojunction bipolar transistor (HBT) and complementary metal-oxide-semiconductor (CMOS)

#18
20200251579
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Bipolar transistor and radio-frequency power amplifier module

#19
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High ruggedness heterojunction bipolar transistor

#20
20200194573
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Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer

#21
20200066886
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Heterojunction bipolar transistor including ballast resistor and semiconductor device

#22
20200052078
2020-02-13

LOW COLLECTOR CONTACT RESISTANCE HETEROJUNCTION BIPOLAR TRANSISTORS

#23
20190386123
2019-12-19

METHODS OF FORMING A BIPOLAR TRANSISTOR HAVING A COLLECTOR WITH A DOPING SPIKE

#24
20190319093
2019-10-17

Integrated RF front end system

#25
20190305119
2019-10-03

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#26
20190305094
2019-10-03

Low collector contact resistance heterojunction bipolar transistors

#27
20190172933
2019-06-06

Semiconductor device

#28
20190158045
2019-05-23

Power amplifier modules including transistor with grading and semiconductor resistor

#29
20190115457
2019-04-18

Heterojunction bipolar transistor

#30
20190088768
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Bipolar transistor and radio-frequency power amplifier module

#31
20190081163
2019-03-14

Semiconductor device including insulated gate bipolar transistor element and freewheeling diode element

#32
20180323293
2018-11-08

Method for manufacturing a bipolar junction transistor

#33
20180130876
2018-05-10

Integrated RF front end system

#34
20180069106
2018-03-08

Fabrication of integrated circuit structures for bipolar transistors

#35
20180012978
2018-01-11

METHODS FOR FORMING BIPOLAR TRANSISTORS HAVING COLLECTOR WITH GRADING

#36
20170358667
2017-12-14

Methods of forming a bipolar transistor having a collector with a doping spike

#37
20170317198
2017-11-02

Method for manufacturing a bipolar junction transistor

#38
20170309703
2017-10-26

Method for creating the high voltage complementary BJT with lateral collector on bulk substrate with resurf effect

#39
20170257070
2017-09-07

Power amplifier modules with bonding pads and related systems, devices, and methods

#40
20170018607
2017-01-19

Integrated RF front end system

#41
20170005184
2017-01-05

Bipolar transistor having collector with doping spike

#42
20160380602
2016-12-29

Power amplifier modules including tantalum nitride terminated through wafer via and related systems, devices, and methods

#43
20160380594
2016-12-29

Power amplifier modules with harmonic termination circuit and related systems, devices, and methods

#44
20160379944
2016-12-29

Power amplifier modules with power amplifier and transmission line and related systems, devices, and methods

#45
20160351682
2016-12-01

Silicon germanium heterojunction bipolar transistor structure and method

#46
20160293700
2016-10-06

Heterojunction bipolar transistor architecture

#47
20160233294
2016-08-11

Method for creating the high voltage complementary BJT with lateral collector on bulk substrate with resurf effect

#48
20160204234
2016-07-14

Bipolar transistor with carbon alloyed contacts

#49
20160104770
2016-04-14

Profile control over a collector of a bipolar junction transistor

#50
20160087073
2016-03-24

Bipolar junction transistors with an air gap in the shallow trench isolation

#51
20160043203
2016-02-11

Self-aligned emitter-base bipolar junction transistor with reduced base resistance and base-collector capacitance

#52
20150311324
2015-10-29

Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic base

#53
20150236141
2015-08-20

Bipolar transistor having collector with grading

#54
20150236093
2015-08-20

Bipolar transistor with carbon alloyed contacts

#55
20150228769
2015-08-13

Formation of an asymmetric trench in a semiconductor substrate and a bipolar semiconductor device having an asymmetric trench isolation region

#56
20150021738
2015-01-22

Bipolar junction transistors with an air gap in the shallow trench isolation

#57
20150008562
2015-01-08

PNP bipolar junction transistor fabrication using selective epitaxy

#58
20150008487
2015-01-08

Junction field-effect transistor with raised source and drain regions formed by selective epitaxy

#59
20140264341
2014-09-18

Methods of fabricating bipolar junction transistors with reduced epitaxial base facets effect for low parasitic collector-base capacitance

#60
20140002187
2014-01-02

Integrated RF front end system

#61
20130285120
2013-10-31

Bipolar transistor having collector with grading

#62
20130134483
2013-05-30

Bipolar transistor with a raised collector pedestal for reduced capacitance

#63
20130119516
2013-05-16

PNP bipolar junction transistor fabrication using selective epitaxy

#64
20130119442
2013-05-16

Junction field-effect transistor with raised source and drain regions formed by selective epitaxy

#65
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2010-12-23

Bipolar transistor structure and method including emitter-base interface impurity

#66
20100301944
2010-12-02

Power amplifier

#67
20100159664
2010-06-24

Silicon germanium heterojunction bipolar transistor structure and method

#68
20090108300
2009-04-30

Silicon germanium heterojunction bipolar transistor structure and method

#69
20090053872
2009-02-26

Method of manufacturing a bipolar transistor

#70
20080265282
2008-10-30

Silicon germanium heterojunction bipolar transistor structure and method

#71
20080116488
2008-05-22

Transistor structure and manufacturing method thereof

#72
16695718
2021-12-21

High performance super-beta NPN (SBNPN)

#73
15196920
2017-11-21

Heterojunction bipolar transistor with stress component

#74
14487582
2016-01-26

Profile control over a collector of a bipolar junction transistor