208266 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed Single quantum well structures
Sub-classes:QUBIT ELEMENT
#2QUBIT ELEMENT
#3QUBIT DEVICE AND METHOD OF OPERATING A QUBIT DEVICE
#4THREE-DIMENSIONAL FLASH MEMORY INCLUDING CHANNEL LAYER HAVING MULTILAYER STRUCTURE, AND METHOD FOR MANUFACTURING SAME
#5Quantum dots, production method thereof, and composite and electronic device including the same
#6High electron mobility transistor with source and drain electrodes below the channel
#7SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
#8Germanium-Silicon-Tin (GeSiSn) Heterojunction Bipolar Transistor Devices
#9Electronic device and method of manufacturing the same
#10Methods of manufacture of advanced wafer bonded heterojunction bipolar transistors
#11Steep sloped vertical tunnel field-effect transistor
#12QUANTUM DIODE FOR TRANSFORMING AN ALTERNATING CURRENT, IN PARTICULAR HIGH FREQUENCY ALTERNATING CURRENT, INTO A DIRECT CURRENT
#13QUANTUM DOT DEVICES WITH SINGLE ELECTRON TRANSISTOR DETECTORS
#14Reprogrammable quantum processor architecture incorporating quantum error correction
#15Optical sensor and image sensor including graphene quantum dots
#16Self-organized quantum dot semiconductor structure
#17Quantum dot array devices with shared gates
#18Quantum well stacks for quantum dot devices
#19Quantum dot devices
#20Quantum dot devices
#21Quantum well field-effect transistor and method for manufacturing the same
#22Reprogrammable quantum processor architecture incorporating quantum error correction
#23Opto-electronic HEMT
#24Quantum well stacks for quantum dot devices
#25Tunneling field effect transistor
#26Quantum shift register structures
#27Quantum dot devices with selectors
#28Quantum dot devices
#29Quantum dot devices with conductive liners
#30Steep sloped vertical tunnel field-effect transistor
#31Semiconductor quantum structures using preferential tunneling through thin insulator layers
#32Semiconductor process for quantum structures with staircase active well incorporating shared gate control
#33RF device integrated on an engineered substrate
#34RF device integrated on an engineered substrate
#35Quantum dot devices
#36Electromagnetic shielding element, and transmission line assembly and electronic structure package using the same
#37Magnetic contacts for spin qubits
#38Quantum dot devices
#39Enhancement mode gallium nitride based transistor device and manufacturing method thereof
#40Quantum structures using aperture channel tunneling through depletion region
#41Quantum dot array devices with shared gates
#42One-transistor DRAM cell device having quantum well structure
#43Advanced wafer bonded heterojunction bipolar transistors and methods of manufacture of advanced wafer bonded heterojunction bipolar transistors
#44QUANTUM DOT DEVICES
#45Energy-filtered cold electron devices and methods
#46Intelligent semiconductor device having SiGe quantum well
#47Optical sensor and image sensor including graphene quantum dots
#48Quantum dots, production method thereof, and composite and electronic device including the same
#49Semiconductor controlled quantum ancillary interaction gate
#50Semiconductor controlled quantum swap interaction gate
#51Semiconductor controlled quantum interaction gates
#52Classic-quantum injection interface device
#53Semiconductor controlled quantum Pauli interaction gate
#54FinFET quantum structures utilizing quantum particle tunneling through oxide
#55Finfet quantum structures utilizing quantum particle tunneling through local depleted well
#56Semiconductor controlled quantum annealing interaction gate
#57Quantum shift register structures
#58Reprogrammable quantum processor architecture incorporating calibration loops
#59Reprogrammable quantum processor architecture
#60Quantum structure incorporating electric and magnetic field control
#61Quantum structure incorporating phi angle control
#62Quantum structure incorporating theta angle control
#63Quantum-classic detection interface device
#64Planar quantum structures utilizing quantum particle tunneling through local depleted well
#65Quantum dot devices with modulation doped stacks
#66Steep sloped vertical tunnel field-effect transistor
#67Quantum dot device packages
#68FinFET based ZRAM with convex channel region
#69Germanium-silicon-tin (GeSiSn) heterojunction bipolar transistor devices
#70Energy-filtered cold electron devices and methods
#71Quantum dot devices with single electron transistor detectors
#72Stiff quantum layers to slow and or stop defect propagation
#73Semiconductor device and method of forming the same
#74FETs and methods for forming the same
#75Electronic circuit for control or coupling of single charges or spins and methods therefor
#76SEMICONDUCTOR DEVICE AND CMOS TRANSISTOR
#77Wafer bonded GaN monolithic integrated circuits and methods of manufacture of wafer bonded GaN monolithic integrated circuits
#78Layer, multilevel element, method for fabricating multilevel element, and method for driving multilevel element
#79Layer, multilevel element, method for fabricating multilevel element, and method for driving multilevel element
#80Semiconductor device having a collector layer including first-conductivity-type semiconductor layers
#81Quantum dot devices with passive barrier elements in a quantum well stack between metal gates
#82Ambipolar synaptic devices
#83Reconfigurable logic device using electrochemical potential
#84Method of manufacturing semiconductor quantum dot and semiconductor quantum dot
#85Semiconductor device with recessed channel array transistor (RCAT) including a superlattice
#86Method for making DRAM with recessed channel array transistor (RCAT) including a superlattice
#87Enhancement-mode/depletion-mode field-effect transistor GAN technology
#88Energy-filtered cold electron devices and methods
#89Light emitting diode having improved quantum efficiency at low injection current
#90RF device integrated on an engineered substrate
#91SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME, CRYSTAL, AND MANUFACTURING METHOD FOR SAME
#92Light emitting diode having improved quantum efficiency at low injection current
#93Optical sensor and image sensor including graphene quantum dots
#94Quantum doping method and use in fabrication of nanoscale electronic devices
#95Nitride semiconductor device
#96FETs and methods for forming the same
#97Synthesis and processing of pure and NV nanodiamonds and other nanostructures for quantum computing and magnetic sensing applications
#98High mobility nanowire fin channel on silicon substrate formed using sacrificial sub-fin
#99Energy-filtered cold electron devices and methods
#100Ambipolar synaptic devices
#101Single electron transistor with wrap-around gate
#102Single-electron transistor with wrap-around gate
#103Two-dimensional layered material quantum well junction devices
#104Advanced wafer bonded heterojunction bipolar transistors and methods of manufacture of advanced wafer bonded heterojunction bipolar transistors
#105High-mobility multiple-gate transistor with improved on-to-off current ratio
#106Semiconductor apparatus
#107Non-planar quantum well device having interfacial layer and method of forming same
#108Energy-filtered cold electron devices and methods
#109Ambipolar synaptic devices
#110Method of making a three-dimensional memory device having a heterostructure quantum well channel
#111Method of manufacturing a semiconductor device including a gate electrode on a protruding group III-V material layer
#112FETs and methods for forming the same
#113Finfet based ZRAM with convex channel region
#114Semiconductor device and fabrication method thereof
#115Semiconductor device and manufacturing method for same, crystal, and manufacturing method for same
#116Semiconductor device
#117Field effect transistor with conduction band electron channel and uni-terminal response
#118High mobility PMOS and NMOS devices having Si—Ge quantum wells
#119Extreme high mobility CMOS logic
#120EPITAXIALLY GROWN QUANTUM WELL FINFETS FOR ENHANCED PFET PERFORMANCE
#121Epitaxially grown quantum well finFETs for enhanced pFET performance
#122Quantum dots, rods, wires, sheets, and ribbons, and uses thereof
#123Anion exchange methods using anion exchange precursor
#124Ambipolar synaptic devices
#125All-electric spin field effect transistor
#126High-mobility semiconductor heterostructures
#127Electronic device including graphene and quantum dots
#128Methods and apparatus for quantum point contacts in CMOS processes
#129Methods and apparatus for artificial exciton in CMOS processes
#130Ferromagnet-free spin transistor and method for operating the same
#131Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
#132Tailoring the optical gap and absorption strength of silicon quantum dots by surface modification with conjugated organic moieties
#133Electronic device having quantum dots and method of manufacturing the same
#134Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device
#135Semiconductor device
#136Quantum well-modulated bipolar junction transistor
#137Ambipolar synaptic devices
#138Semiconductor film, method of producing semiconductor film, solar cell, light-emitting diode, thin film transistor, and electronic device
#139Semiconductor device
#140Ambipolar synaptic devices
#141Semiconductor device including a gate electrode on a protruding group III-V material layer
#142Single electron transistor device
#143Radial nanowire Esaki diode devices and methods
#144Silicon-compatible germanium-based transistor with high-hole-mobility
#145Optoelectronic integrated circuit
#146Integrated circuit devices including strained channel regions and methods of forming the same
#147CARRIER MOBILITY IN SURFACE-CHANNEL TRANSISTORS, APPARATUS MADE THEREWITH, AND SYSTEMS CONTAINING SAME
#148Field effect transistor with conduction band electron channel and uni-terminal response
#149Semiconductor device and fabrication method thereof
#150Semiconductor device and fabrication method thereof
#151Advanced heterojunction devices and methods of manufacturing advanced heterojunction devices
#152Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
#153Low-Resistivity p-Type GaSb Quantum Wells for Low-Power Electronic Devices
#154Production of a semiconductor device having at least one column-shaped or wall-shaped semiconductor element
#155Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making same
#156Nanocrystals containing CdTe core with CdS and ZnS coatings
#157Vertical gallium nitride transistors and methods of fabricating the same
#158Low-resistivity p-type GaSb quantum wells
#159High electron mobility transistor and method of forming the same
#160Solid state cloaking for electrical charge carrier mobility control
#161Nitride semiconductor device and method of manufacturing the same
#162Dual mode tilted-charge devices and methods
#163Coupled asymmetric quantum confinement structures
#164SUPERLATTICE STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
#165Nanoscale emitters with polarization grading
#166Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device
#167Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making same
#168Non-planar germanium quantum well devices
#169Method for forming antimony-based FETs monolithically
#170Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
#171Twin-drain spatial wavefunction switched field-effect transistors
#172Extreme high mobility CMOS logic
#173Narrow-Waist Nanowire Transistor with Wide Aspect Ratio Ends
#174UNIAXIALLY STRAINED QUANTUM WELL DEVICE AND METHOD OF MAKING SAME
#175Quantum electro-optical device using CMOS transistor with reverse polarity drain implant
#176Non-planar quantum well device having interfacial layer and method of forming same
#177LIGHT EMITTING DEVICE
#178High power, high efficiency quantum cascade lasers with reduced electron leakage
#179STRAIN CONTROL IN SEMICONDUCTOR DEVICES
#180UNIAXIAL TENSILE STRAIN IN SEMICONDUCTOR DEVICES
#181P-type semiconductor device comprising type-2 quantum well and fabrication method thereof
#182Semiconductor material doping
#183Spin transistor having multiferroic gate dielectric
#184Field effect transistor with conduction band electron channel and uni-terminal response
#185Method for forming antimony-based FETs monolithically
#186Non-planar germanium quantum well devices
#187Semiconductor material doping based on target valence band discontinuity
#188Coupled asymmetric quantum confinement structures
#189Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
#190Methods of manufacturing quantum well materials
#191Quantum dot memory
#192Tunneling field effect transistor switch device
#193Carrier mobility in surface-channel transistors, apparatus made therewith, and systems containing same
#194High-mobility multiple-gate transistor with improved on-to-off current ratio
#195Twin-drain spatial wavefunction switched field-effect transistors
#196Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using same
#197Double pass formation of a deep quantum well in enhancement mode III-V devices
#198Semiconductor device and method of fabricating the same
#199Silicon single electron device
#200SELECTIVE AREA EPITAXY GROWTH METHOD AND STRUCTURE
#201Nonvolatile memory and three-state FETs using cladded quantum dot gate structure
#202Spin transistor using epitaxial ferromagnet-semiconductor junction
#203INSULATING FILM AND ELECTRONIC DEVICE
#204Insulating film and electronic device
#205Apparatus Having Electric Circuitry and Method of Making Same
#206INSULATING FILM AND ELECTRONIC DEVICE
#207INSULATING FILM AND ELECTRONIC DEVICE
#208Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
#209Surface-treated lead chalcogenide nanocrystal quantum dots
#210Extreme high mobility CMOS logic
#211Insulating film and electronic device
#212Insulating film and electronic device
#213Insulating film and electronic device
#214Method for forming a modified semiconductor having a plurality of band gaps
#215Insulating film and electronic device
#216Quantum dot devices with independent gate control
#217Quantum dot devices with side and center screening gates
#218Back-gated quantum well heterostructure
#219Optical waveguides in micro-LED devices
#220High electron mobility transistor
#221Etched spin-qubit for high temperature operation
#222Ion trapping for quantum information processing
#223Resistive three-dimensional memory device with heterostructure semiconductor local bit line and method of making thereof
#224Vertical single electron transistor formed by condensation
#225Broadband photovoltaic sheets and method of constructing the same