208288 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AB compounds Amorphous materials
SEMICONDUCTOR DEVICE
#2AMORPHOUS BORON NITRIDE FILM, SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR INCLUDING SAME, AND METHOD OF MANUFACTURING BORON NITRIDE FILM
#3Semiconductor device including different nitride regions improving characteristics of the semiconductor device
#4Semiconductor device
#5Semiconductor device including compound and nitride members
#6Semiconductor device
#7Semiconductor device including different nitride regions and method for manufacturing same
#8Semiconductor device with a fin-shaped active region and a gate electrode
#9Semiconductor device
#10Semiconductor device including different nitride regions and method for manufacturing same
#11Semiconductor device
#12Nanowire transistors with embedded dielectric spacers
#13Semiconductor-on-insulator (SOI) substrate comprising a trap-rich layer with small grain sizes
#14Semiconductor device with a fin-shaped active region and a gate electrode
#15Semiconductor device and method for manufacturing semiconductor device
#16Amorphous boron nitride dielectric
#17Compound semiconductor substrate and method of forming a compound semiconductor substrate
#18Semiconductor device having a fin-shaped active region and a gate electrode
#19Crystalline-amorphous transition material for semiconductor devices and method for formation
#20InGaAIN-based semiconductor device
#21Field-effect transistor and semiconductor device
#22Group III-nitride transistor using a regrown structure
#23III-nitride metal insulator semiconductor field effect transistor
#24Amorphous group III-V semiconductor material and preparation thereof
#25Boron phoshide-based compound semiconductor device, production method thereof and light-emitting diode
#26III-Nitride metal-insulator-semiconductor field-effect transistor
#27Method of forming a stacked low temperature transistor and related devices