208293 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AB compounds Cd X compounds being one element of the 6th group of the Periodic System
FUNCTIONAL PHOTORESIST AND METHOD OF PATTERNING NANOPARTICLE THIN FILM USING THE SAME
#2OXYGEN GETTERS FOR ACTIVATION OF GROUP V DOPANTS IN II-VI SEMICONDUCTOR MATERIALS
#3Compound semiconductor and method for producing the same
#4Two-dimensional semiconductor device, optoelectronic unit and method for making the two-dimensional semiconductor device
#5Sulfur-containing thin films
#6Contact stacks to reduce hydrogen in semiconductor devices
#7Vertical field effect transistors with self aligned source/drain junctions
#8Vertical field effect transistors with self aligned source/drain junctions
#9Light-activated compositions and methods using the same
#10Semiconductor heterostructures with wurtzite-type structure on ZnO substrate
#11GaN laminate and method of manufacturing the same
#12Sulfur-containing thin films
#13Compositionally matched molecular solders for semiconductors
#14Sulfur-containing thin films
#15Light-activated compositions and methods using the same
#16Integrated circuit die having reduced defect group III-nitride layer and methods associated therewith
#17Surface doping of nanostructures
#18Passivated nanoparticles
#19Methods of forming colloidal nanocrystal-based thin film devices
#20Methods for the preparation of colloidal nanocrystal dispersion
#21Sulfur-containing thin films
#22Method for treating a semiconductor wafer
#23Semiconductor device including a vertical edge termination structure and method of manufacturing
#24Crystals of semiconductor material having a tuned band gap energy and method for preparation thereof
#25Semiconductor device with diode
#26GROUP III NITRIDE-BASED HIGH ELECTRON MOBILITY TRANSISTOR
#27Method of manufacturing compound semiconductor device
#28Passivated nanoparticles
#29Bipolar junction transistor guard ring structures and method of fabricating thereof
#30Semiconductor device contacts
#31Shaped nanocrystal particles and methods for making the same
#32Alloyed semiconductor quantum dots and concentration-gradient alloyed quantum dots, series comprising the same and methods related thereto
#33MODIFIED CADMIUM TELLURIDE LAYER, A METHOD OF MODIFYING A CADMIUM TELLURIDE LAYER, AND A THIN FILM DEVICE HAVING A CADMIUM TELLURIDE LAYER
#34Composite Nanorods
#35Nanodevice, transistor comprising the nanodevice, method for manufacturing the nanodevice, and method for manufacturing the transistor
#36Electronic component, methods for the production thereof, and use thereof
#37Bipolar junction transistor guard ring structures and method of fabricating thereof
#38Bipolar semiconductor device and manufacturing method
#39Atomic layer deposition for functionalizing colloidal and semiconductor particles
#40Blocking contacts for N-type cadmium zinc telluride
#41Field effect transistor, logic circuit including the same and methods of manufacturing the same
#42Shaped nanocrystal particles and methods for making the same
#43Compound semiconductor device and method of manufacturing the same
#44Alloyed semiconductor quantum dots and concentration-gradient alloyed quantum dots, series comprising the same and methods related thereto
#45Shaped nanocrystal particles and methods for working the same
#46Non-volatile memory device including semiconductor charge-trapping material particles