ClassID:

208294

H01L29/2206 - CPC Classification

Classification description:

Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AB compounds Amorphous materials

Recent Application in this class:
#1
20240421231
2024-12-19

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

#2
20240290888
2024-08-29

SEMICONDUCTOR DEVICE

#3
20230299207
2023-09-21

Semiconductor device comprising silicon and oxide semiconductor in channel formation region

#4
20230238432
2023-07-27

Laminate, semiconductor device, and method for manufacturing laminate

#5
20230223446
2023-07-13

Laminate, semiconductor device, and method for manufacturing laminate

#6
20230097298
2023-03-30

COMPOSITE OXIDE SEMICONDUCTOR AND TRANSISTOR

#7
20220238658
2022-07-28

Integrated Assemblies Having Semiconductor Oxide Channel Material, and Methods of Forming Integrated Assemblies

#8
20210313433
2021-10-07

Laminate, semiconductor device, and method for manufacturing laminate

#9
20210265503
2021-08-26

Semiconductor device with a fin-shaped active region and a gate electrode

#10
20210202746
2021-07-01

Semiconductor device comprising oxide semiconductor with c-axis-aligned crystals

#11
20210175364
2021-06-10

Thin film transistor array substrate for digital x-ray detector device, digital x-ray detector device, and manufacturing method thereof

#12
20210091224
2021-03-25

Composite oxide semiconductor and transistor

#13
20200227519
2020-07-16

Semiconductor devices

#14
20200212222
2020-07-02

Semiconductor device

#15
20200185518
2020-06-11

Tin oxide layer, TFT having the same as channel layer, and manufacturing method for the TFT

#16
20200161434
2020-05-21

Integrated assemblies having semiconductor oxide channel material, and methods of forming integrated assemblies

#17
20200135771
2020-04-30

Transistor and electronic device

#18
20200119202
2020-04-16

Metal oxide film, semiconductor device, and manufacturing method of semiconductor device

#19
20200006385
2020-01-02

Semiconductor-on-insulator (SOI) substrate comprising a trap-rich layer with small grain sizes

#20
20190363193
2019-11-28

Thin film transistors with a crystalline oxide semiconductor source/drain

#21
20190355725
2019-11-21

Self-aligned top-gated non-planar oxide semiconductor thin film transistors

#22
20190341499
2019-11-07

TFT, MANUFACTURING METHOD THEREOF, AND LCD DEVICE

#23
20190312149
2019-10-10

Semiconductor device

#24
20190273168
2019-09-05

SEMICONDUCTOR DEVICE AND DISPLAY DEVICE

#25
20190273159
2019-09-05

Semiconductor device with a fin-shaped active region and a gate electrode

#26
20190214291
2019-07-11

Layer, multilevel element, method for fabricating multilevel element, and method for driving multilevel element

#27
20190172952
2019-06-06

Semiconductor device

#28
20190115432
2019-04-18

Layer, multilevel element, method for fabricating multilevel element, and method for driving multilevel element

#29
20190115431
2019-04-18

Layer, multilevel element, method for fabricating multilevel element, and method for driving multilevel element

#30
20190035939
2019-01-31

Metal oxide film, semiconductor device, and manufacturing method of semiconductor device

#31
20180277661
2018-09-27

THIN FILM TRANSISTOR SUBSTRATE, MANUFACTURING METHOD FOR THIN FILM TRANSISTOR SUBSTRATE, AND LIQUID CRYSTAL DISPLAY

#32
20180166580
2018-06-14

Method for manufacturing semiconductor device and method for manufacturing liquid crystal display panel

#33
20180114855
2018-04-26

Composite oxide semiconductor and transistor

#34
20170243967
2017-08-24

Electronic device including two-dimensional electron gas and method of fabricating the same

#35
20170213913
2017-07-27

Semiconductor device having a fin-shaped active region and a gate electrode

#36
20170130329
2017-05-11

Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target

#37
20170110546
2017-04-20

Reduction of defect induced leakage in III-V semiconductor devices

#38
20160351694
2016-12-01

Semiconductor device and manufacturing method thereof

#39
20160336408
2016-11-17

Reduction of defect induced leakage in III-V semiconductor devices

#40
20160334918
2016-11-17

Fabrication method of an array substrate

#41
20160211380
2016-07-21

Semiconductor device having an oxide semiconductor layer

#42
20160197076
2016-07-07

Field-effect transistor and semiconductor device

#43
20160163871
2016-06-09

Semiconductor device and manufacturing method thereof

#44
20160118254
2016-04-28

Oxide and method for forming the same

#45
20150221774
2015-08-06

Semiconductor device and manufacturing method thereof

#46
20150034948
2015-02-05

Semiconductor device including transistor whose gate is electrically connected to capacitor

#47
20140346501
2014-11-27

Semiconductor device

#48
20140302638
2014-10-09

Semiconductor device and manufacturing method thereof

#49
20130306966
2013-11-21

Transistor having sulfur-doped zinc oxynitride channel layer and method of manufacturing the same

#50
20130200362
2013-08-08

Thin film transistor

#51
20130112973
2013-05-09

Precursor composition and method for forming amorphous conductive oxide film

#52
20130112971
2013-05-09

Composite oxide sintered body and sputtering target comprising same

#53
20130082256
2013-04-04

Semiconductor device

#54
20120001169
2012-01-05

Semiconductor device comprising an oxide semiconductor

#55
20110260121
2011-10-27

Composite oxide sintered body and sputtering target comprising same

#56
20110127523
2011-06-02

Semiconductor device